The organic small molecule 4,4′,4″,4′″-(5,5-dimethoxycyclopenta-1,3-diene-1,2,3,4-tetrayl)tetrakis(N,N-bis(4-methoxyhenyl)aniline (CPDA 1), shows electrochemical properties very close to spiro-OMeTAD indicating a high compatibility with PSC systems for its use as a hole transport material (HTM). The implementation of the cyclopentadiene dimethyl acetale core helps to red shift the absorption onset of the films as well as provide a flexible spatial configuration of the molecule, which is essential for optimum film forming properties. Transient and steady state emission analysis as well as hole mobility measurements indicate that the new HTM allows a better charge extraction, transport and separation than the spiro-OMeTAD reference compound. PSCs based on the new CPDA 1 show a PCE close to 23% with lower hysteresis than its analogue. Stability studies performed under ambient, heated and humid conditions all showed that CPDA 1 is over-performing spiro-OMeTAD. Furthermore the production cost of CPDA 1 is about 10 times lower than that of spiro-OMeTAD, contributing to render PSCs more affordable.

A method for manufacturing a perovskite solar cell, includes disposing an electron transport layer on a transparent conductive substrate, disposing an additive-doped perovskite light absorption layer on the electron transport layer, disposing a hole transport layer on the additive-doped perovskite light absorption layer, and disposing an electrode on the hole transport layer. The disposing of the additive-doped perovskite light absorption layer includes adding an additive having hydrophobicity to a perovskite precursor solution, and applying the additive-added perovskite precursor solution onto the electron transport layer to form the additive-doped perovskite light absorption layer.

Provided is a perovskite-based photovoltaic device including a layered scaffold material and at least one perovskite material interpenetrating the layered scaffold, wherein the at least one perovskite layer is removable and regenerable.

An optoelectronic device is provided, the p-doped HTL device comprising an active layer comprising organometal halide perovskite and a hole transport layer (HTL) formed by vacuum evaporation and configured to transport hole carriers. The HTL includes a first sublayer comprising a hole transport material (HTM) doped with an n-dopant and disposed adjacent to the active layer, a second sublayer comprising the HTM that is undoped and disposed adjacent to the first sublayer, and a third sublayer comprising the HTM doped with a p-dopant and disposed adjacent to the second sublayer. The doping concentration of the n-dopant for the n-doped sublayer is determined to match the highest occupied molecular orbital energy level of the n-doped sublayer with the valence band maximum energy level of the perovskite active layer.

The present disclosure describes solution methods for manufacturing perovskite halide films for use in solar cells. The methods include the use of additives that facilitate the formation of transitory, intermediate films that are later transformed into the final target perovskite halide films, such that the final films provide improved physical characteristics and operational performance.

The present application provides a method for preparing a perovskite film, and a related perovskite film, solar cell and solar cell device thereof. The preparation method may include the steps of (1) providing a target material comprising the following elements: lead, a halogen, and one or more alkali metals; (2) sputtering using the target material in step (1), where a process gas is a noble gas, optionally, argon, so as to obtain a film; (3) subjecting the film obtained in step (2) to a chemical bath treatment, wherein the chemical bath is a solution of AX, A is selected from one or more of formamidine or methylamine, and X is a halogen; and (4) sputtering on the film obtained in step (3) using a tin metal, where a process gas comprises a noble gas, optionally, a mixture of argon and a halogen gas, so as to obtain the perovskite film.

A method including depositing a lead halide precursor ink onto a substrate; drying the lead halide precursor ink to form a first thin film; annealing the first thin film; and forming a perovskite material layer, wherein forming the perovskite material layer includes: depositing a benzylammonium halide precursor ink onto the first thin film; drying the benzylammonium halide precursor ink; depositing a formamidinium halide precursor ink onto the benzylammonium halide precursor ink; drying the formamidinium halide precursor ink to form a second thin film; and annealing the second thin film.

A highly reliable micromachine, display element, or the like is provided. As a micromachine or a transistor including the micromachine, a transistor including an oxide semiconductor in a semiconductor layer where a channel is formed is used. For example, a transistor including an oxide semiconductor is used as at least one transistor in one or a plurality of transistors driving a micromachine.

The present invention concerns a device for room temperature reverse-bias operation photo-detection. The device comprising:—a planar first electrode extending in a planar direction;—a second electrode positioned above the first electrode in a direction substantially perpendicular to said planar direction; and—an active region sandwiched between the first and second electrode. The active region consists of a light absorbing perovskite and wherein the light absorbing perovskite is in direct contact with at least one of the first and second electrodes.

The invention provides an optoelectronic device comprising a mixed-anion perovskite, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions. The invention further provides a mixed-halide perovskite of the formula (I) [A][B][X].sub.3 wherein: [A] is at least one organic cation; [B] is at least one divalent metal cation; and [X] is said two or more different halide anions. In another aspect, the invention provides the use of a mixed-anion perovskite as a sensitizer in an optoelectronic device, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions. The invention also provides a photosensitizing material for an optoelectronic device comprising a mixed-anion perovskite wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions.