A tandem-type photoelectric conversion device includes, arranged in the following order from a light-incident side: a first photoelectric conversion unit; an anti-reflection layer; a transparent conductive layer; and a second photoelectric conversion unit. The first photoelectric conversion unit includes a light absorbing layer including a photosensitive material of perovskite-type crystal structure represented by general formula R.sup.1NH.sub.3M.sup.1X.sub.3 or HC(NH.sub.2).sub.2M.sup.1X.sub.3, wherein R.sup.1 is an alkyl group, M.sup.1 is a divalent metal ion, and X is a halogen. The second photoelectric conversion unit includes a light absorbing layer having a bandgap narrower than a bandgap of the light absorbing layer in the first photoelectric conversion unit. The anti-reflection layer and the transparent conductive layer are in contact with each other, and a refractive index of the anti-reflection layer is lower than a refractive index of the transparent conductive layer.

Provided are methods, systems, and apparatuses providing flexible conductive substrates for nanomaterial/perovskite-based optoelectronic devices. One such apparatus may include a flexible conductive substrate, a nanomaterial layer disposed on the flexible conductive substrate, and a perovskite layer disposed on the nanomaterial layer. The flexible conductive substrate may be a cost-effective metal sheet such as a stainless steel sheet or an aluminum sheet. The nanomaterial layer may comprise semiconductor or oxide nanorods, nanowires, nanotubes, or nanoparticles, such as gadolinium-doped zinc oxide nanorods. The perovskite layer may comprise inorganic or organic perovskite. The apparatus may further include an optically transparent conductive layer disposed on the perovskite layer. Optionally, the apparatus may include an electrical contact disposed on a portion of the optically transparent conductive layer.

A method for preparing photoactive perovskite materials. The method comprises the steps of: introducing a lead halide and a first solvent to a first vessel and contacting the lead halide with the first solvent to dissolve the lead halide to form a lead halide solution, introducing a Group 1 metal halide a second solvent into a second vessel and contacting the Group 1 metal halide with the second solvent to dissolve the Group 1 metal halide to form a Group 1 metal halide solution, and contacting the lead halide solution with the Group 1 metal halide solution to form a thin-film precursor ink. The method further comprises depositing the thin-film precursor ink onto a substrate, drying the thin-film precursor ink to form a thin film, annealing the thin film; and rinsing the thin film with a salt solution.

A buffer layer for protecting an organic layer during high-energy deposition of an electrically conductive layer is disclosed. Buffer layers in accordance with the present invention are particularly well suited for use in perovskite-based single-junction solar cells and double-junction solar cell structures that include at least one perovskite-based absorbing layer. In some embodiments, the buffer layer comprises a layer of oxide-based nanoparticles that is formed using solution-state processing, in which a solution comprising the nanoparticles and a volatile solvent is spin coated onto a structure that includes the organic layer. The solvent is subsequently removed in a low-temperature process that does not degrade the organic layer.

Embodiments relate to an optoelectronic device including a substrate, a photoactive layer formed on the substrate to receive light and generate an electron-hole pair, an electron transport layer and a hole transport layer formed on both surfaces of the photoactive layer, a first electrode formed between the substrate and the photoactive layer, and a passivation layer formed at an opposite side to the first electrode on the photoactive layer.

Provided is a photoelectric conversion element including a first electrode, a hole blocking layer, an electron transport layer, a first hole transport layer, and a second electrode, wherein the first hole transport layer includes at least one of basic compounds represented by general formula (1a) and general formula (1b) below: ##STR00001##
where in the formula (1a) or (1b), R.sub.1 and R.sub.2 represent a substituted or unsubstituted alkyl group or aromatic hydrocarbon group and may be identical or different, and R.sub.1 and R.sub.2 may bind with each other to form a substituted or unsubstituted heterocyclic group containing a nitrogen atom.

The present specification relates to a polymer and an organic solar cell including the same.

To provide an organic compound represented by the following general formula (1): ##STR00001##
where R.sub.1 is a C2-C6 alkyl group or a hydrogen atom, R.sub.2 and R.sub.3, which may be identical or different, are each a C2-C12 alkyl group, and R.sub.4 and R.sub.5, which may be identical or different, are each a C6-C12 alkyl group that may be a branched chain or a straight chain.

An ultra-thin and highly transparent wafer-type plasmonic solar cell comprising a layer of a conductive transparent substrate, a layer of an n-type semiconductor; a layer made of metal nanoparticles selected from the group consisting of copper, gold or silver and a layer made of a p-type semiconductor; wherein the substrate, n-type semiconductor, metal nanoparticles and p-type semiconductor respectively are linked by covalent bonds by means of one or more molecular linker/linkers. A method for producing said plasmonic solar cell by self- assembly.

An electroluminescent device including an anode and a cathode facing each other, an emission layer disposed between the anode and the cathode, the emission layer including quantum dots, a hole auxiliary layer disposed between the emission layer and the anode and an electron auxiliary layer disposed between the emission layer and the cathode, wherein the electroluminescent device is configured such that electrons are dominant in the emission layer and a logarithmic value (log (HT/ET)) of a hole transport capability (HT) relative to an electron transport capability (ET) is less than or equal to about 1, or the electroluminescent device is configured such that holes are dominant in the emission layer and the logarithmic log value (log (HT/ET)) of the hole transport capability (HT) relative to the electron transport capability (ET) is greater than or equal to about 0.5.