A transparent conductive film includes a metal chalcogenide compound doped with a halogen and having a sheet resistance at room temperature of less than or equal to about 60 ohm/sq.

A solid-state image sensor is provided. The solid-state image sensor includes a semiconductor substrate having photoelectric conversion elements. The solid-state image sensor also includes an isolation structure disposed between the photoelectric conversion elements. The solid-state image sensor further includes a color filter layer disposed above the semiconductor substrate and having color filter segments that correspond to the photoelectric conversion elements. Moreover, the solid-state image sensor includes an organic film disposed above the color filter layer. The solid-state image sensor also includes an upper electrode and a lower electrode respectively disposed on the upper side and the lower side of the organic film. The solid-state image sensor further includes nano-structures disposed on the upper side or the lower side of the organic film.

The present invention is a structure of a photodiode, which comprises a substrate; a first electrode is arranged on the substrate; a first transport layer is arranged on the first electrode; a photoactive layer is arranged on the first transport layer, the photoactive layer includes a P-type semiconductor layer and an N-type semiconductor layer. The P-type semiconductor layer and the N-type semiconductor layer have a composition ratio between 1:0.5 and 1:1.5. The photoactive layer has a thickness ranging from 1 μm to 15 m, the photoactive layer has a first energy gap value, and a second electrode is disposed on the photoactive layer.

An organic semiconducting compound and an organic photoelectric component containing the same are provided. The organic semiconducting compound has a novel chemical structure to make the organic semiconducting compound have good response to the infrared light. The organic semiconducting compound can be applied to the organic photoelectric components such as organic photodetector (OPD), organic photovoltaic (OPV) cell, and organic field-effect transistor (OFET). Thus, the organic photoelectric components have better light absorption range and photoelectric response while in use.

An organic semiconducting compound and an organic photoelectric component containing the same are provided. The organic semiconducting compound has a novel chemical structure to make the organic semiconducting compound have good response to the infrared light. The organic semiconducting compound can be applied to the organic photoelectric components such as organic photodetector (OPD), organic photovoltaic (OPV) cell, and organic field-effect transistor (OFET). Thus, the organic photoelectric components have better light absorption range and photoelectric response while in use.

A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed: ##STR00001## In Chemical Formula 1, each substituent is the same as described in the detailed description.

Provided are an inverted thick 2D hybrid perovskite solar cell insensitive to film thickness and a preparation method thereof, belonging to the field of organic-inorganic hybrid perovskite materials. The solar cell adopts a 2D hybrid perovskite thick-film material as a light absorption layer having thickness in a range of 500-800 nm, which is conducive to the full absorption of sunlight. The thick-film film material can be deposited from a precursor solution added with guanidine hydroiodide, and is composed of large grains growing along the thickness direction. The solar cell with an inverted structure prepared by using the thick-film material as a light absorption layer has an efficiency fluctuation less than 5% in a film thickness range of 500-800 nm. This is of great value for the preparation of high-performance hybrid perovskite solar cells by a large-area solution method.

The present invention discloses a ternary polymer solar cell. A photoactive layer of the ternary polymer solar cell includes two non-fullerene electron acceptors with large planarity. The weight percentage composition of the photoactive layer in the ternary polymer solar cell is: 41.6-50% of polymer electron donor, 0-50% of polymer electron acceptor, and 0-50% of non-fullerene perylene diimide (PDI) electron acceptor. The non-fullerene PDI electron acceptor is added into the photoactive layer to broaden the spectral absorption of the photoactive layer, improve the phase separation of the photoactive layer and inhibit the recombination of bimolecular charges, resulting in more efficient generation and transport of charges, thereby increasing a short-circuit current density of the ternary polymer solar cell device, and finally improving the power conversion efficiency of the ternary polymer solar cell device. Moreover, a new direction is provided for the selection of the all-polymer non-fullerene acceptor.

A compound of formula (I):
EAG-EDG-EAG   (I)
wherein each EAG is an electron accepting group; and EDG is an electron-donating group of formula (IIa): ##STR00001##
The compound of formula (I) may be used in a photosensitive layer of an organic photodetector wherein the photosensitive layer comprises the compound of formula (I) and an electron donor. A photosensor may comprise the organic photodetector and a light source, e.g. a near infra-red light source.

A semiconductor apparatus includes, a substrate having a main surface, an upper electrode disposed above the substrate, a first lower electrode and a second lower electrode disposed between the substrate and the upper electrode, an isolation region disposed between the first lower electrode and the second lower electrode, a functional layer configured to perform light emission or photoelectric conversion, and an interface layer disposed at least on the first lower electrode. The semiconductor apparatus further includes a first insulator portion that is disposed between the first lower electrode and the second lower electrode and includes a first portion disposed at a position farther away from the main surface than an upper surface of the interface layer.