A photoelectric device includes a first electrode, a second electrode facing the first electrode, an active layer between the first electrode and the second electrode, and an electron auxiliary layer between the second electrode and the active layer, wherein the electron auxiliary layer includes any one compound selected from compounds represented by Chemical Formulas 1 to 4 and any combination thereof.

A photoelectric device includes a first electrode, a second electrode facing the first electrode, an active layer between the first electrode and the second electrode, and an electron auxiliary layer between the second electrode and the active layer, wherein the electron auxiliary layer includes any one compound selected from compounds represented by Chemical Formulas 1 to 4 and any combination thereof.

The present invention relates to a method of producing a metal oxide layer on a substrate, to a method of producing an optoelectronic device or an electrochemical device and to an optoelectronic device comprising a metal oxide layer.

The present invention relates to a method of producing a metal oxide layer on a substrate, to a method of producing an optoelectronic device or an electrochemical device and to an optoelectronic device comprising a metal oxide layer.

A solar cell has high photoelectric conversion efficiency and comprises a semiconductor substrate, and a first semiconductor layer having first conductivity and a second semiconductor layer having second conductivity that are each layered on the semiconductor substrate. The material volume Vmp at 10% of the load area of at least a first main surface of the semiconductor substrate is 0.003 ?m.sup.3/?m.sup.2 to 0.010 ?m.sup.3/?m.sup.2.

A solar cell has high photoelectric conversion efficiency and comprises a semiconductor substrate, and a first semiconductor layer having first conductivity and a second semiconductor layer having second conductivity that are each layered on the semiconductor substrate. The material volume Vmp at 10% of the load area of at least a first main surface of the semiconductor substrate is 0.003 ?m.sup.3/?m.sup.2 to 0.010 ?m.sup.3/?m.sup.2.

An object of the present invention is to provide a solar cell that is excellent in photoelectric conversion efficiency, suffers little degradation during encapsulation (initial degradation), has high-humidity durability, and is excellent in temperature cycle resistance. The present invention provides a solar cell including: a laminate having an electrode, a counter electrode, and a photoelectric conversion layer disposed between the electrode and the counter electrode; and an encapsulation material covering the counter electrode to encapsulate the laminate, the photoelectric conversion layer including an organic-inorganic perovskite compound represented by the formula: R-M-X.sub.3, R representing an organic molecule, M representing a metal atom, X representing a halogen atom or a chalcogen atom, the encapsulation material including a resin having at least one skeleton selected from the group consisting of polyisobutylene, polyisoprene, and polybutadiene.

An object is to provide an organic photoelectric conversion element having high durability. The present invention provides an organic photoelectric conversion element having an active layer between a cathode and an anode, characterized in that, the organic photoelectric conversion element includes a layer including a cured product obtained by curing a thermosetting resin composition between the anode and the active layer, and a transmittance of light with a wavelength of 380 nm to 780 nm is 10% or higher. The present invention provides the organic photoelectric conversion element in which the thermosetting resin composition includes one or more selected from the group consisting of polythiophene and derivatives thereof and a polymer compound including a repeating unit having an aromatic amine residue.

A method of manufacturing an optoelectronic device includes the steps of: providing a substrate; depositing a first electrode layer on the substrate; depositing a first charge-carrier selective layer with a thickness less than 5 nm situated directly on the first electrode layer; depositing insulating silicon oxide nanoparticles directly on the first charge-carrier selective layer, the particles having a diameter between 10 nm and 100 nm; depositing a perovskite-based semiconductor layer on the first charge-carrier selective layer and on the insulating silicon oxide nanoparticles, the perovskite-based semiconductor layer being in intimate contact with both the first charge-carrier selective layer and the insulating silicon oxide nanoparticles; depositing a second charge-carrier selective layer on the perovskite-based semiconductor layer; depositing a second electrode layer on the second charge-carrier selective layer.

The present invention relates to the technical field of solar cells, and particularly relates to a perovskite/silicon heterojunction tandem solar cell and a preparation method thereof. The solar cell includes a silicon-based sub-cell and a perovskite sub-cell laminated on the silicon-based sub-cell, where intermediate layers or recombination junctions formed by a p-type heavily-doped amorphous silicon layer and an n-type heavily-doped amorphous silicon layer are arranged between the silicon-based sub-cell and the perovskite sub-cell. According to the present invention, through the use of the p-type heavily-doped amorphous silicon layer and the n-type heavily-doped amorphous silicon layer as a carrier recombination junction, on the one hand, the preparation and equipment costs are greatly reduced, and on the other hand, the photocurrent density and conversion efficiency of the tandem cell can be improved.