According to some embodiments, an organic device and method of forming an organic device are disclosed. A hybrid cathode layer is formed in stacked alignment with a substrate. The hybrid cathode layer includes a combination of a conductive nanowire and an electron-transport material. After forming the hybrid cathode layer, a photoactive layer is formed on a structure that includes the substrate and the hybrid cathode layer. After forming the photoactive layer, a hybrid anode layer that is separated from the hybrid cathode layer by the photoactive layer is formed. The hybrid anode layer includes a combination of a conductive nanowire and a hole-transporting material.

A polymer comprising a donor repeat unit and an acceptor repeat unit wherein the acceptor repeat unit comprise a repeat unit of formula (I): A.sup.1 is selected from formula (IIa): formula (lib); O; S; and NR.sup.1 wherein R.sup.1 is H or a substituent: (Ha) (lib) Ar.sup.3 is a monocyclic or polycyclic aromatic group; X.sup.1 and X.sup.2 are each independently selected from N and CR.sup.2 wherein R.sup.2 in each occurrence is H or a substituent with the proviso that at least one of X.sup.1 and X.sup.2 is selected from N and CR.sup.2 wherein R.sup.2 is an electron withdrawing group; Ar.sup.1 is selected from pyrrole, benzene, pyridine and 1,4-diazine; A.sup.2 is O, S, SO.sub.2, NR.sup.1, PR.sup.1, C(R.sup.3).sup.2 and Si(R.sup.3)2 wherein R.sup.3 in each occurrence is independently H or a substituent; and Ar.sup.2 is a monocyclic or polycyclic aromatic group.

A polymer comprising a donor repeat unit and an acceptor repeat unit wherein the acceptor repeat unit comprise a repeat unit of formula (I): A.sup.1 is selected from formula (IIa): formula (lib); O; S; and NR.sup.1 wherein R.sup.1 is H or a substituent: (Ha) (lib) Ar.sup.3 is a monocyclic or polycyclic aromatic group; X.sup.1 and X.sup.2 are each independently selected from N and CR.sup.2 wherein R.sup.2 in each occurrence is H or a substituent with the proviso that at least one of X.sup.1 and X.sup.2 is selected from N and CR.sup.2 wherein R.sup.2 is an electron withdrawing group; Ar.sup.1 is selected from pyrrole, benzene, pyridine and 1,4-diazine; A.sup.2 is O, S, SO.sub.2, NR.sup.1, PR.sup.1, C(R.sup.3).sup.2 and Si(R.sup.3)2 wherein R.sup.3 in each occurrence is independently H or a substituent; and Ar.sup.2 is a monocyclic or polycyclic aromatic group.

An imaging apparatus includes a first electrode, a second electrode, a photoelectric conversion layer, a charge injection layer, and a charge accumulation region. The second electrode opposes the first electrode. The photoelectric conversion layer is located between the first electrode and the second electrode, contains a donor semiconductor material and an acceptor semiconductor material, and generates a pair of an electron and a hole. The charge injection layer is located between the first electrode and the photoelectric conversion layer. The charge accumulation region is electrically coupled to the second electrode and accumulates the hole. An ionization potential of the charge injection layer is less than or equal to an ionization potential of the acceptor semiconductor material. Electron affinity of the charge injection layer is less than or equal to electron affinity of the acceptor semiconductor material. Light transmittance of the charge injection layer is greater than or equal to 70%.

An imaging apparatus includes a first electrode, a second electrode, a photoelectric conversion layer, a charge injection layer, and a charge accumulation region. The second electrode opposes the first electrode. The photoelectric conversion layer is located between the first electrode and the second electrode, contains a donor semiconductor material and an acceptor semiconductor material, and generates a pair of an electron and a hole. The charge injection layer is located between the first electrode and the photoelectric conversion layer. The charge accumulation region is electrically coupled to the second electrode and accumulates the hole. An ionization potential of the charge injection layer is less than or equal to an ionization potential of the acceptor semiconductor material. Electron affinity of the charge injection layer is less than or equal to electron affinity of the acceptor semiconductor material. Light transmittance of the charge injection layer is greater than or equal to 70%.

An infrared photodiode includes an anode, a cathode, a photoelectric conversion layer between the anode and the cathode and including an infrared absorbing material, and a first auxiliary layer between the anode and the photoelectric conversion layer and a second auxiliary layer between the cathode and the photoelectric conversion layer. The first auxiliary layer and the second auxiliary layer each independently include an electron transport material that is configured to facilitate electron introduction, and/or facility electron transport, and/or inhibit hole movement. A sensor may include the infrared photodiode. An electronic device may include the infrared photodiode.

An infrared photodiode includes an anode, a cathode, a photoelectric conversion layer between the anode and the cathode and including an infrared absorbing material, and a first auxiliary layer between the anode and the photoelectric conversion layer and a second auxiliary layer between the cathode and the photoelectric conversion layer. The first auxiliary layer and the second auxiliary layer each independently include an electron transport material that is configured to facilitate electron introduction, and/or facility electron transport, and/or inhibit hole movement. A sensor may include the infrared photodiode. An electronic device may include the infrared photodiode.

The present disclosure discloses a photoelectric conversion element in which dark current is reduced, wherein the photoelectric conversion element includes a first electrode, a second electrode, and a photoelectric conversion layer disposed between the first electrode and the second electrode and including quantum dots, which include nanoparticles and a protective ligand, wherein the nanoparticles contain at least two elements selected from the group consisting of group 11 elements, group 12 elements, group 13 elements, group 14 elements, group 15 elements, and group 16 elements, and the protective ligand includes a cationic ligand and an anionic ligand, and the cationic ligand and the anionic ligand both have a molecular weight of 250 or less.

Example embodiments relate to an organic photoelectronic device that includes a first electrode, a light-absorption layer on the first electrode and including a first p-type light-absorption material and a first n-type light-absorption material, a light-absorption auxiliary layer on the light-absorption layer and including a second p-type light-absorption material or a second n-type light-absorption material that have a smaller full width at half maximum (FWHM) than the FWHM of the light absorption layer, a charge auxiliary layer on the light-absorption auxiliary layer, and a second electrode on the charge auxiliary layer, and an image sensor including the same.

In various embodiments, an electronic device comprises, for example, at least one photosensitive layer and at least one carrier selective layer. Under one range of biases on the device, the photosensitive layer produces a photocurrent while illuminated. Under another range of biases on the device, the photosensitive does not produce a photocurrent while illuminated. A carrier selective layer expands the range of biases over which the photosensitive layer does not produce any photocurrent while illuminated. In various embodiments, an electronic device comprises, for example, at least one photosensitive layer and at least one carrier selective layer. Under a first range of biases on the device, the photosensitive layer is configured to collect a photocurrent while illuminated. Under a second range of biases on the device, the photosensitive layer is configured to collect at least M times lower photocurrent while illuminated compared to under the first range of biases.