The present invention relates to a method for manufacturing a solar cell, and the solar cell manufactured thereby, the method comprising a step for manufacturing a laminate in which a first electrode layer, a hole transport layer (HTL), a photoactive layer, an electron transport layer, and a second electrode layer are laminated in order, wherein the hole transport layer or the electron transport layer is formed by applying and drying a dispersion including a dispersion solvent, a hydroxide, and a metal oxide surface-modified with a carboxylic acid (RCOOH).

Organic polymer semiconductor-based polymer solar cells (PSCs) have attracted considerable research interest due to having excellent electrical, structural, optical, mechanical, and chemical properties. In the past 20 years, considerable efforts have been made to develop PSCs. Generally, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) is used as a hole transport layer (HTL) of the PSC to enhance hole extraction efficiency, but highly acidic PEDOT:PSS destroys an indium tin oxide (ITO) electrode and an active layer and thus reduces the lifetime of the device. To avoid this problem, some attempts have been made to develop inverted PSCs having different electron transport layers (ETLs). However, such a device has limited power conversion efficiency (PCE) due to low electron mobility of the ETL. Therefore, attempts have been made to enhance the PCE of inverted PSCs using indium gallium zinc oxide (IGZO) having optimized indium (In), gallium (Ga), and zinc (Zn) contents. Accordingly, inverted PSCs that have ZnO or IGZO (having varying In:Ga:Zn molar ratios) as an ETL and have an ITO/ETL/PTB7:PC.sub.71BM/MoO.sub.3/Al structure have been constructed. The PCE of the inverted PSC can be increased from 6.22% to 8.72% using IGZO having an optimized weight ratio of In, Ga, and Zn.

Organic polymer semiconductor-based polymer solar cells (PSCs) have attracted considerable research interest due to having excellent electrical, structural, optical, mechanical, and chemical properties. In the past 20 years, considerable efforts have been made to develop PSCs. Generally, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) is used as a hole transport layer (HTL) of the PSC to enhance hole extraction efficiency, but highly acidic PEDOT:PSS destroys an indium tin oxide (ITO) electrode and an active layer and thus reduces the lifetime of the device. To avoid this problem, some attempts have been made to develop inverted PSCs having different electron transport layers (ETLs). However, such a device has limited power conversion efficiency (PCE) due to low electron mobility of the ETL. Therefore, attempts have been made to enhance the PCE of inverted PSCs using indium gallium zinc oxide (IGZO) having optimized indium (In), gallium (Ga), and zinc (Zn) contents. Accordingly, inverted PSCs that have ZnO or IGZO (having varying In:Ga:Zn molar ratios) as an ETL and have an ITO/ETL/PTB7:PC.sub.71BM/MoO.sub.3/Al structure have been constructed. The PCE of the inverted PSC can be increased from 6.22% to 8.72% using IGZO having an optimized weight ratio of In, Ga, and Zn.

A photoelectric conversion device according to some example embodiments includes an upper electrode, a lower electrode, and an active layer including a donor material, an acceptor material, and a light-absorbing material and disposed between the upper electrode and the lower electrode, wherein the donor material includes a compound represented by Formula 1, and the light-absorbing material includes bis-(4-dimethylaminodithiobenzyl)-Ni(II) (BDN).

A photoelectric conversion device according to some example embodiments includes an upper electrode, a lower electrode, and an active layer including a donor material, an acceptor material, and a light-absorbing material and disposed between the upper electrode and the lower electrode, wherein the donor material includes a compound represented by Formula 1, and the light-absorbing material includes bis-(4-dimethylaminodithiobenzyl)-Ni(II) (BDN).

The present disclosure relates to a composition that includes a perovskite having a surface, where the surface includes a pyridine compound. In some embodiments of the present disclosure, the pyridine compound may include an amine functional group. In some embodiments of the present disclosure, the pyridine compound may be selected from a group that includes N(2-methylpyridine)A, N(3-methylpyridine)A, N(4-(methyl)pyridine)A, N(3-(2-ethyl)pyridine)A, and N(4-(2-ethyl)pyridine)A, where A is a cation, and the pyridine compound has an ionic radius larger than 10 ?.

The present disclosure relates to a composition that includes a perovskite having a surface, where the surface includes a pyridine compound. In some embodiments of the present disclosure, the pyridine compound may include an amine functional group. In some embodiments of the present disclosure, the pyridine compound may be selected from a group that includes N(2-methylpyridine)A, N(3-methylpyridine)A, N(4-(methyl)pyridine)A, N(3-(2-ethyl)pyridine)A, and N(4-(2-ethyl)pyridine)A, where A is a cation, and the pyridine compound has an ionic radius larger than 10 ?.

An electron transport includes a metal co-doped zinc oxide compound having a formula Mn.sub.xCo.sub.0.015Zn.sub.1-xO, wherein x has a value in a range of 0.001 to 0.014. The electron transport material of the present disclosure may be used in a perovskite solar cell.

There is provided a light-harvesting heterostructure for a photovoltaic device. The photovoltaic device includes at least an electron-transport layer and a hole-transport layer. The light-harvesting heterostructure includes a 3D perovskite material contacting one of the electron-transport layer and the hole-transport layer. The light-harvesting heterostructure also includes a 2D perovskite capping material extending over at least a portion of the 3D perovskite material and contacting another one of the electron-transport layer and the hole-transport layer. The 2D perovskite capping material includes one or more perovskite layers, each perovskite layer having a corresponding width n, wherein a majority of the corresponding width n is greater or equal to 3. The 2D perovskite capping material also includes a spacer extending between two subsequent perovskite layers.

There is provided a light-harvesting heterostructure for a photovoltaic device. The photovoltaic device includes at least an electron-transport layer and a hole-transport layer. The light-harvesting heterostructure includes a 3D perovskite material contacting one of the electron-transport layer and the hole-transport layer. The light-harvesting heterostructure also includes a 2D perovskite capping material extending over at least a portion of the 3D perovskite material and contacting another one of the electron-transport layer and the hole-transport layer. The 2D perovskite capping material includes one or more perovskite layers, each perovskite layer having a corresponding width n, wherein a majority of the corresponding width n is greater or equal to 3. The 2D perovskite capping material also includes a spacer extending between two subsequent perovskite layers.