Patent classifications
H10K30/85
ORGANIC COMPOUND AND SENSOR AND SENSOR EMBEDDED DISPLAY PANEL AND ELECTRONIC DEVICE
Disclosed are an organic compound represented by Chemical Formula 1, and a sensor, a sensor-embedded display panel, and an electronic device including the organic compound.
##STR00001##
In Chemical Formula 1, D, A.sup.1, A.sup.2, R.sup.1, and R.sup.2 are each the same as in the specification.
SOLAR CELL
A solar cell includes a first electrode, an intermediate layer, a photoelectric conversion layer, and a second electrode in this order. The intermediate layer contains at least one compound A selected from predefined compound group I and at least one compound B selected from predefined compound group II.
LIGHT RECEIVING ELEMENT AND ELECTRONIC DEVICE INCLUDING THE SAME
A light receiving element includes a first electrode, a hole transport region disposed on the first electrode, a light receiving layer disposed on the hole transport region and converting incident light to an electrical signal, an electron transport region disposed on the light receiving layer, and a second electrode disposed on the electron transport region. The light receiving layer includes a p-dopant compound, a donor compound, and an acceptor compound.
IMAGING DEVICE
A multifunctional imaging device is provided. The imaging device includes first to fourth light-receiving elements and first and second functional layers. The first to fourth light-receiving elements are photoelectric conversion elements having sensitivity to light of different wavelengths from each other. The first and second functional layers each include first and second transistors. The first functional layer and the fourth to first light-receiving elements are stacked in this order over the second functional layer. In each of the first to fourth light-receiving elements, a first conductive layer, a first buffer layer, a photoelectric conversion layer, a second buffer layer, and a second conductive layer are stacked in this order. The photoelectric conversion layer includes an organic compound, and the first buffer layer and the second buffer layer each include a metal or an organic compound. The first transistor is electrically connected to the first conductive layer of any of the first to fourth light-receiving elements. The second transistor is electrically connected to the first transistor.
HIGHLY EFFICIENT INVERTED POLYMER SOLAR CELLS USING AN INDIUM GALLIUM ZINC OXIDE INTERFACIAL LAYER
Organic polymer semiconductor-based polymer solar cells (PSCs) have attracted considerable research interest due to having excellent electrical, structural, optical, mechanical, and chemical properties. In the past 20 years, considerable efforts have been made to develop PSCs. Generally, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) is used as a hole transport layer (HTL) of the PSC to enhance hole extraction efficiency, but highly acidic PEDOT:PSS destroys an indium tin oxide (ITO) electrode and an active layer and thus reduces the lifetime of the device. To avoid this problem, some attempts have been made to develop inverted PSCs having different electron transport layers (ETLs). However, such a device has limited power conversion efficiency (PCE) due to low electron mobility of the ETL. Therefore, attempts have been made to enhance the PCE of inverted PSCs using indium gallium zinc oxide (IGZO) having optimized indium (In), gallium (Ga), and zinc (Zn) contents. Accordingly, inverted PSCs that have ZnO or IGZO (having varying In:Ga:Zn molar ratios) as an ETL and have an ITO/ETL/PTB7:PC.sub.71BM/MoO.sub.3/Al structure have been constructed. The PCE of the inverted PSC can be increased from 6.22% to 8.72% using IGZO having an optimized weight ratio of In, Ga, and Zn.
HIGHLY EFFICIENT INVERTED POLYMER SOLAR CELLS USING AN INDIUM GALLIUM ZINC OXIDE INTERFACIAL LAYER
Organic polymer semiconductor-based polymer solar cells (PSCs) have attracted considerable research interest due to having excellent electrical, structural, optical, mechanical, and chemical properties. In the past 20 years, considerable efforts have been made to develop PSCs. Generally, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) is used as a hole transport layer (HTL) of the PSC to enhance hole extraction efficiency, but highly acidic PEDOT:PSS destroys an indium tin oxide (ITO) electrode and an active layer and thus reduces the lifetime of the device. To avoid this problem, some attempts have been made to develop inverted PSCs having different electron transport layers (ETLs). However, such a device has limited power conversion efficiency (PCE) due to low electron mobility of the ETL. Therefore, attempts have been made to enhance the PCE of inverted PSCs using indium gallium zinc oxide (IGZO) having optimized indium (In), gallium (Ga), and zinc (Zn) contents. Accordingly, inverted PSCs that have ZnO or IGZO (having varying In:Ga:Zn molar ratios) as an ETL and have an ITO/ETL/PTB7:PC.sub.71BM/MoO.sub.3/Al structure have been constructed. The PCE of the inverted PSC can be increased from 6.22% to 8.72% using IGZO having an optimized weight ratio of In, Ga, and Zn.
NITROGEN-CONTAINING COMPOUND, ELECTRONIC ELEMENT, AND ELECTRONIC DEVICE
The present disclosure provides a nitrogen-containing compound, an electronic element, and an electronic device, and belongs to the technical field of organic materials. In the nitrogen-containing compound, 1-adamantyl and a cyano group are connected on a nitrogen-containing heteroaryl core structure by a linking group, so that the molecule has a high dipole moment as a whole, organic materials with a high electron mobility can be obtained, and the electron transport properties of the electronic element can be improved, and when the nitrogen-containing compound is used as an electron transport layer of an organic electroluminescent device, the luminous efficiency and service life of the device can be improved, and the operating voltage can be reduced.
NITROGEN-CONTAINING COMPOUND, ELECTRONIC ELEMENT, AND ELECTRONIC DEVICE
The present disclosure provides a nitrogen-containing compound, an electronic element, and an electronic device, and belongs to the technical field of organic materials. In the nitrogen-containing compound, 1-adamantyl and a cyano group are connected on a nitrogen-containing heteroaryl core structure by a linking group, so that the molecule has a high dipole moment as a whole, organic materials with a high electron mobility can be obtained, and the electron transport properties of the electronic element can be improved, and when the nitrogen-containing compound is used as an electron transport layer of an organic electroluminescent device, the luminous efficiency and service life of the device can be improved, and the operating voltage can be reduced.
ELECTRONICALLY ACTIVE, SOLVENT RESISTANT ORGANIC FILMS PROCESSED FROM ALCOHOL OR AQUEOUS MEDIA
Thin films of organic semiconducting material comprising perylene diimide small molecules with pyrrolic N—H bonds. Films are prepared using green solvents including water and alcohols. The films can be solvent-resistant and generally range in thickness from 10 to 1000 nm. Perylene diimide molecules are dissolved in solvent by addition of a base to polarize the pyrrolic N—H bond believed to generate an ionic salt in alcohol or aqueous solution. Devices containing such films are provided. Methods of making films and methods of using films in OPV device applications and in amine sensors are provided.
ELECTRONICALLY ACTIVE, SOLVENT RESISTANT ORGANIC FILMS PROCESSED FROM ALCOHOL OR AQUEOUS MEDIA
Thin films of organic semiconducting material comprising perylene diimide small molecules with pyrrolic N—H bonds. Films are prepared using green solvents including water and alcohols. The films can be solvent-resistant and generally range in thickness from 10 to 1000 nm. Perylene diimide molecules are dissolved in solvent by addition of a base to polarize the pyrrolic N—H bond believed to generate an ionic salt in alcohol or aqueous solution. Devices containing such films are provided. Methods of making films and methods of using films in OPV device applications and in amine sensors are provided.