This application provides a perovskite solar cell structurally including a transparent electrode, an electron transport layer, a perovskite layer, a hole transport layer and a second electrode in sequence, where the perovskite layer may include a main perovskite layer and a one-dimensional perovskite coating layer covering surface and periphery of the main perovskite layer, where the one-dimensional perovskite coating layer may include: a first overlay layer disposed between the main perovskite layer and the electron transport layer; and a second overlay layer disposed between the main perovskite layer and the hole transport layer.

This application provides a perovskite solar cell structurally including a transparent electrode, an electron transport layer, a perovskite layer, a hole transport layer and a second electrode in sequence, where the perovskite layer may include a main perovskite layer and a one-dimensional perovskite coating layer covering surface and periphery of the main perovskite layer, where the one-dimensional perovskite coating layer may include: a first overlay layer disposed between the main perovskite layer and the electron transport layer; and a second overlay layer disposed between the main perovskite layer and the hole transport layer.

The present application provides a perovskite solar cell, including conductive glass, a hole transport layer, a perovskite layer, an electron transport layer and a back electrode, where a passivation layer may be disposed between the hole transport layer and the perovskite layer, and the passivation layer may include an amide and/or a cation thereof, where the amide may include a compound of formula (1) and/or formula (2):

##STR00001## where R.sub.1 and R.sub.2 are each independently selected from hydrogen, —R, —NR.sub.2, —NHR, —NH.sub.2, —OH, —OR, —NHCOR, —OCOR, and —CH.sub.2COOH, where R represents a straight or branched chain alkyl group having 1-10 carbon atoms, m is an integer of 0 to 10; and n is an integer of 1 to 10; and

##STR00002## where Ar is selected from a C5-C10 aryl or heteroaryl group.

The present application provides a perovskite solar cell, including conductive glass, a hole transport layer, a perovskite layer, an electron transport layer and a back electrode, where a passivation layer may be disposed between the hole transport layer and the perovskite layer, and the passivation layer may include an amide and/or a cation thereof, where the amide may include a compound of formula (1) and/or formula (2):

##STR00001## where R.sub.1 and R.sub.2 are each independently selected from hydrogen, —R, —NR.sub.2, —NHR, —NH.sub.2, —OH, —OR, —NHCOR, —OCOR, and —CH.sub.2COOH, where R represents a straight or branched chain alkyl group having 1-10 carbon atoms, m is an integer of 0 to 10; and n is an integer of 1 to 10; and

##STR00002## where Ar is selected from a C5-C10 aryl or heteroaryl group.

A perovskite solar battery, including a transparent conductive glass substrate, a hole transport layer, a perovskite light-absorbing layer, an electron transport layer, and an electrode are described. The hole transport layer is a nickel oxide hole transport layer. Simple-substance nickel exists on a contact surface of the hole transport layer in contact with the perovskite light-absorbing layer. On the contact surface of the hole transport layer in contact with the perovskite light-absorbing layer, a ratio between simple-substance nickel and trivalent nickel is 85:15 to 99:1, optionally 90:10 to 99:1, and further optionally 95:5 to 99:1. This application further provides a method for preparing a perovskite solar battery.

A perovskite solar battery, including a transparent conductive glass substrate, a hole transport layer, a perovskite light-absorbing layer, an electron transport layer, and an electrode are described. The hole transport layer is a nickel oxide hole transport layer. Simple-substance nickel exists on a contact surface of the hole transport layer in contact with the perovskite light-absorbing layer. On the contact surface of the hole transport layer in contact with the perovskite light-absorbing layer, a ratio between simple-substance nickel and trivalent nickel is 85:15 to 99:1, optionally 90:10 to 99:1, and further optionally 95:5 to 99:1. This application further provides a method for preparing a perovskite solar battery.

The present invention relates to a method for forming a charge transport layer on a substrate. Specifically, the present invention provides a method for manufacturing a device comprising a charge transport layer, which enables a uniform charge transport layer to be formed by a solution process even on a large area substrate. The method for manufacturing a device comprising a charge transport layer, of the present invention, may comprise: a charge forming step of forming first polarity charges on a transparent conductive substrate; a polymer electrolyte coating forming step of forming, on the transparent conductive substrate on which the first polarity charges are formed, a polymer electrolyte coating layer of second polarity charges which have the opposite polarity to that of the first polarity charges; and a first charge transport layer forming step of coating the polymer electrolyte coating layer with nanoparticles having the first polarity charges so as to form a first charge transport layer.

Provided is a semiconductor element that can generate power with high efficiency and has high durability.

A multilayer junction photoelectric conversion element according to an embodiment includes: a first electrode; a first photoactive layer including a perovskite semiconductor; a first doped layer; a tunnel insulating film; a second photoactive layer containing silicon; and a second electrode, in this order. A thickness of the tunnel insulating film is 1 nm to 15 nm, and the first doped layer contains silicon and a trivalent or pentavalent element as an impurity. The element can be manufactured by a method including forming a bottom cell including a second active layer and then forming a first photoactive layer by coating.

Provided is a semiconductor element that can generate power with high efficiency and has high durability.

A multilayer junction photoelectric conversion element according to an embodiment includes: a first electrode; a first photoactive layer including a perovskite semiconductor; a first doped layer; a tunnel insulating film; a second photoactive layer containing silicon; and a second electrode, in this order. A thickness of the tunnel insulating film is 1 nm to 15 nm, and the first doped layer contains silicon and a trivalent or pentavalent element as an impurity. The element can be manufactured by a method including forming a bottom cell including a second active layer and then forming a first photoactive layer by coating.

A photoelectric conversion element includes a first electrode, a first interfacial layer, a photoelectric conversion layer, and a second electrode in this order, wherein the photoelectric conversion layer includes quantum dots and a first organic compound, the first organic compound satisfies Formula (1), an electron affinity of a material used for the first interfacial layer, an electron affinity of the quantum dots, and an electron affinity of the first organic compound satisfy Formulas (2) and (3):

E2>E1  (1)

E1 [eV]: energy at short-wavelength end of optical wavelength region detected by the photoelectric conversion element

E2 [eV]: band gap of the first organic compound

E3<E4−0.2  (2)

E4−0.4<E5<E4  (3)

E3 [eV]: electron affinity of material used for the first interfacial layer

E4 [eV]: electron affinity of the quantum dots

E5 [eV]: electron affinity of the first organic compound.