A novel composite oxide semiconductor which can be used in a transistor including an oxide semiconductor film is provided. In the composite oxide semiconductor, a first region and a second region are mixed. The first region includes a plurality of first clusters containing In and oxygen as main components. The second region includes a plurality of second clusters containing Zn and oxygen as main components. The plurality of first clusters have portions connected to each other. The plurality of second clusters have portions connected to each other.

The present disclosure relates to an organic compound having a binaphthyl core and a group connected to the biphenyl core and having excellent charge mobility property, and a light emitting diode and a light emitting device having the organic compound. The organic compound can be applied into the light emitting diode by using solution process and has very deep HOMO energy level. When the organic compound is applied into a chare transfer layer, a HOMO energy level bandgap between the charge transfer layer and an emitting material layer is reduced so that holes and electrons can be injected into the emitting material layer in a balanced manner.

The present invention relates to a method for producing a light-emitting diode having polarized emission, comprising: applying a liquid, in which elongated semiconductor nanoparticles are dispersed, to a surface of a substrate containing at least two electrodes, and aligning the semiconductor nanoparticles applied on the substrate surface in an electric field generated by the electrodes. transferring the aligned semiconductor nanoparticles from the surface of the substrate to a surface of a semifinished product of the light-emitting diode.

The present disclosure relates to a quantum dot and a preparation method for the same, and a photoelectric device. The quantum dot includes a core and a shell layer coating the core, a material of the core is CdZnSe, and a material of the shell layer is CdZnS, wherein, a molar ratio of Cd element with respect to S element in the shell layer is from 0.15:1 to 0.4:1.

Embodiments of the present disclosure disclose a quantum dot material and related applications. The quantum dot material includes: quantum dots, and ligands connected with the quantum dots, and further includes isolation units, wherein the isolation units are cyclic molecules, and the ligands are configured to bond with the cyclic molecules through electrostatic force, so that the quantum dots and the ligands are wrapped with the multiple isolation units; and the isolation units are configured to isolate the quantum dots.

Nanostructures including a first semiconductor nanocrystal including zinc and selenium, and a second semiconductor nanocrystal including a zinc chalcogenide, wherein a composition of the second semiconductor nanocrystal is different from a composition of the first semiconductor nanocrystal, wherein the nanostructures further include tellurium, wherein in the nanostructures, a mole ratio of selenium to tellurium is greater than or equal to about 0.83:1 and less than or equal to about 10:1, wherein a derivative thermogravimetry curve of the nanostructures has an extreme value in a temperature range of greater than or equal to about 250° C. and less than or equal to about 420° C.

A ligand includes a molecular skeleton, a first coordinating group connected to the molecular skeleton, at least one initial group connected to the molecular skeleton, and a protecting group connected to an end of each initial group away from the molecular skeleton. Each initial group is capable of forming a second coordinating group after deprotection.

A light emitting device including a first electrode and a second electrode facing each other, an emission layer disposed between the first electrode and the second electrode, wherein the emission layer includes a plurality of quantum dots and metal carboxylate having at least one hydrocarbon group of at least one carbon atoms, and the plurality of quantum dots includes a first organic ligand, and does not include cadmium and lead, and a method of manufacturing the same.

A light emitting device including a first electrode, a second electrode, a quantum dot layer disposed between the first electrode and the second electrode and a first auxiliary layer disposed between the quantum dot layer and the first electrode, wherein the first auxiliary layer includes nickel oxide nanoparticles having an average particle diameter of less than or equal to about 10 nanometers (nm) and an organic ligand, a method of manufacturing the light emitting device, and a display device including the same.

A quantum dot including a core including a first semiconductor nanocrystal including a Group III-V compound; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, tellurium, and selenium, wherein the quantum dot does not include cadmium, and the semiconductor nanocrystal shell has a mole ratio of tellurium to selenium of less than about 0.025:1, a composition including the quantum dot, a quantum dot-polymer composite, a patterned layer including the composite, and an electronic device including the patterned layer.