The present disclosure provides an organic light-emitting diode and a display panel, the organic light-emitting diode including: a first electrode, a second electrode, a light-emitting layer, a hole blocking layer and an electron transport layer; the first electrode and the second electrode are oppositely arranged; the light-emitting layer is between the first electrode and the second electrode; the hole blocking layer is between the light-emitting layer and the second electrode; the electron transport layer is between the hole transport layer and the second electrode, wherein the energy level difference between the HOMO energy level of the hole blocking layer and the HOMO energy level of the light-emitting layer is larger than or equal to 0.1 eV, and the energy level difference between the HOMO energy level of the electron transport layer and the HOMO energy level of the hole blocking layer is larger than or equal to 0.1 eV.

The present disclosure provides nanostructure compositions and methods of producing nanostructure compositions. The nanostructure compositions comprise at least one population of nanostructures, at least one reactive diluent, at least one anaerobic stabilizer, and optionally at least one organic resin. The present disclosure also provides nanostructure films comprising a nanostructure layer and methods of making nanostructure films.

Disclosed are a light-emitting device and a method of manufacturing the same. The light-emitting device includes: a first electrode; a second electrode facing the first electrode; an emission layer between the first electrode and the second electrode and including a quantum dot including a first ligand bonded to a surface thereof; and a charge transport layer including an inorganic nanoparticle including a second ligand bonded to a surface thereof, wherein an interface between the emission layer and the charge transport layer includes a cross-link in which the first ligand on the surface of the quantum dot and the second ligand on the surface of the inorganic nanoparticle are linked by a cross-linking agent.

A QLED light-emitting device is provided, including a first electrode layer, an electron injection layer, an electron transport layer, a light-emitting layer, a hole transport layer, a hole injection layer, and a second electrode layer. Wherein, the light-emitting layer includes a plurality of quantum dot layers disposed in a stack, and insulating layers are disposed among the quantum dot layers adjacent to one side of the electron injection layer. Through disposing the insulating layers among the quantum dot layers adjacent to the one side of the electron injection layer, an electron transmission rate is reduced, thereby balancing the electron transmission rate and a hole transmission rate and improving luminous efficiency of QLEDs.

A QLED light-emitting device is provided, including a first electrode layer, an electron injection layer, an electron transport layer, a light-emitting layer, a hole transport layer, a hole injection layer, and a second electrode layer. Wherein, the light-emitting layer includes a plurality of quantum dot layers disposed in a stack, and insulating layers are disposed among the quantum dot layers adjacent to one side of the electron injection layer. Through disposing the insulating layers among the quantum dot layers adjacent to the one side of the electron injection layer, an electron transmission rate is reduced, thereby balancing the electron transmission rate and a hole transmission rate and improving luminous efficiency of QLEDs.

A quantum dot and its preparation method and application. The method includes the steps of forming a compound quantum dot core first, then adding a precursor of a metal element M.sup.2 to be alloyed into the reaction system containing the compound quantum dot core. The metal element M.sup.2 undergoes cation exchange with a metal element M.sup.1 in the existing compound quantum dot core, thereby forming a quantum dot with an alloy core. In this method, the distribution of alloyed components is not only adjusted by changing the feeding ratio of the metal elements and the non-metal elements, but also by a more real-time, more direct, and more precise adjustments through various reaction condition parameters of the actual reaction process, thereby achieving a more precise composition and energy level distribution control for alloyed quantum dots.

Alight-emitting element includes an anode electrode, a cathode electrode, a light-emitting layer, a positive hole transport layer, and an electron transport layer. The light-emitting layer, the positive hole transport layer, and the electron transport layer are provided between the anode electrode and the cathode electrode. The light-emitting layer includes QD phosphor particles, a positive hole transport substance configured to transport positive holes transported thereto by the positive hole transport layer, an electron transport substance configured to transport electrons transported thereto by the electron transport layer, and a photosensitive host material.

A quantum dot white light-emitting diode includes a cathode, an anode, and a light-emitting layer disposed therebetween. The light-emitting layer includes: a blue fluorescent organic layer, a spacer layer, and a quantum dot light-emitting layer. The blue fluorescent organic layer is disposed near the cathode side, the quantum dot light-emitting layer is disposed near the anode side, and the spacer layer is disposed between the blue fluorescent organic layer and the quantum dot light-emitting layer. A material of the quantum dot light-emitting layer contains quantum dots, a material of the blue fluorescent organic layer contains a blue fluorescent organic material, and a material of the spacer layer contains a spacer material. A triplet exciton energy of the spacer material is greater than a triplet exciton energy of the blue fluorescent organic material, and a triplet exciton energy of the spacer material is greater than a quantum dot exciton energy.

A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed.

An inorganic light emitting diode in which at least one energy control layer including an organometallic compound interacting with a hydroxyquinoline moiety is disposed between an emitting material layer and at least one charge transfer layer and an inorganic light emitting device including the diode are disclosed. An exciton recombination zone is formed at the central region in the EML, and inorganic luminescent particles have minimal surface defects by introducing the energy control layer. The inorganic light emitting diode and the inorganic light emitting device can improve their color purity and luminous efficiency.