H10K50/115

Composition, quantum dot-polymer composite, and display device including same

A composition including a quantum dot, a dispersing agent for dispersing the quantum dot, a polymerizable monomer including a carbon-carbon double bond, an initiator, a hollow metal oxide particulate, and a solvent, and a quantum dot-polymer composite manufactured from the composition.

Composition, quantum dot-polymer composite, and display device including same

A composition including a quantum dot, a dispersing agent for dispersing the quantum dot, a polymerizable monomer including a carbon-carbon double bond, an initiator, a hollow metal oxide particulate, and a solvent, and a quantum dot-polymer composite manufactured from the composition.

Nanostructure Ink Compositions for Inkjet Printing
20230235225 · 2023-07-27 · ·

The invention pertains to the field of nanotechnology. The disclosure provides nanostructure compositions comprising (a) at least one organic solvent; (b) at least one population of nanostructures comprising a core and at least one shell, wherein the nanostructures comprise inorganic ligands bound to the surface of the nanostructures; and (c) at least one poly(alkylene oxide) additive. The nanostructure compositions comprising at least one poly(alkylene oxide) additive show improved solubility in organic solvents. And, the nanostructure compositions show increased suitability for use in inkjet printing. The disclosure also provides methods of producing emissive layers using the nanostructure compositions.

QUANTUM DOT ENSEMBLE AND MANUFACTURING METHOD THEREOF, QUANTUM DOT ENSEMBLE LAYER, AND IMAGING DEVICE

A manufacturing method of a quantum dot ensemble of the present disclosure is a manufacturing method of a quantum dot ensemble including a plurality of core-shell quantum dots 10A that each includes a core 10B including a compound semiconductor, and a shell 10C including a compound semiconductor and covering the core, and a ligand 10D coordinated to the shell, and the manufacturing method includes mixing a core material, a shell material, and the ligand in a solvent and thereafter performing heating to thereby form the core-shell quantum dots, coordinate the ligand to the shell, and cleave the ligand.

QUANTUM DOT ENSEMBLE AND MANUFACTURING METHOD THEREOF, QUANTUM DOT ENSEMBLE LAYER, AND IMAGING DEVICE

A manufacturing method of a quantum dot ensemble of the present disclosure is a manufacturing method of a quantum dot ensemble including a plurality of core-shell quantum dots 10A that each includes a core 10B including a compound semiconductor, and a shell 10C including a compound semiconductor and covering the core, and a ligand 10D coordinated to the shell, and the manufacturing method includes mixing a core material, a shell material, and the ligand in a solvent and thereafter performing heating to thereby form the core-shell quantum dots, coordinate the ligand to the shell, and cleave the ligand.

DISPLAY PANEL AND METHOD OF FABRICATING THE SAME

Disclosed are display panels and methods of fabricating the same. The display panel includes a base substrate having a pixel area and a peripheral area adjacent to the pixel area, a light emitting element on the base substrate to generate a first light and overlapping the pixel area, a light control layer on the light emitting element to convert the first light into a white light, and a color filter layer on the light control layer and includes a first color filter that allows penetration of the first light, a second color filter that allows penetration of a second light different from the first light, and a third color filter that allows penetration of a third light different from the first light and the second light.

LIGHT-EMITTING DEVICE
20230006166 · 2023-01-05 ·

A light-emitting device includes an HTL including a metal chalcogenide between an anode and an EML, with an IL including an organic material at least between the HTL and the EML. A distance between the HTL and the EML in a light-emitting element that emits light in a wavelength band having the shortest light emission peak wavelength is greater than a distance between the HTL and the EML in each of the other light-emitting elements.

LIGHT ABSORPTION LAYER, METHOD FOR MANUFACTURING SAME, DISPERSION LIQUID, PHOTOELECTRIC CONVERSION ELEMENT, AND SOLAR CELL
20230006148 · 2023-01-05 · ·

The present invention provides a light absorption layer for forming a photoelectric conversion element and a solar cell excellent in photoelectric conversion efficiency, a photoelectric conversion element and a solar cell having the light absorption layer, and a method for manufacturing a light absorption layer having few voids. The light absorption layer of the present invention contains a perovskite compound and a quantum dot containing an aliphatic amino acid.

DISPLAY DEVICE

A display device includes: a first subpixel including a quantum dot light-emitting layer configured to emit light of a first color: a second subpixel including a quantum dot light-emitting layer configured to emit light of a second color different from the light of the first color: a third subpixel including a quantum dot light-emitting layer configured to emit light of a third color different from the light of the first color and the light of the second color: and a data processing circuit configured to receive a first input data corresponding to the first subpixel, a second input data corresponding to the second subpixel, and a third input data corresponding to the third subpixel. The data processing circuit generates first output data corresponding to a first data voltage supplied to the first subpixel by using the first input data, the second input data, and the third input data.

SEMICONDUCTOR NANOPARTICLE, PRODUCTION METHOD THEREOF, AND ELECTROLUMINESCENT DEVICE AND DISPLAY DEVICE INCLUDING THE SAME

An electroluminescent device including a first electrode, a second electrode, and a light-emitting layer disposed between the first electrode and the second electrode, the light-emitting layer including a plurality of semiconductor nanoparticles, wherein the light-emitting layer is configured to emit green light, wherein the plurality of semiconductor nanoparticles include a first semiconductor nanocrystal including indium, phosphorus, and optionally zinc, and a second semiconductor nanocrystal including a zinc chalcogenide, wherein the zinc chalcogenide includes zinc, selenium, and sulfur, wherein in the plurality of the semiconductor nanoparticles, a mole ratio of zinc to indium is greater than or equal to about 60:1, and wherein the electroluminescent device is configured to exhibit a T90 of greater than or equal to about 120 hours as measured with an initial driving luminance of about 2700 nit.