Provided in embodiments of the present disclosure are a light-emitting structure, a display apparatus and an illuminating apparatus. The light-emitting structure includes at least two light-emitting layers stacked layer by layer, wherein the at least two light-emitting layers are used to emit at least two colors; and a transparent electrode, which is disposed between adjacent light-emitting layers. By means of providing the transparent electrode between adjacent light-emitting layers, the present disclosure adjusts the light colors of the light-emitting structure effectively, and improves the resolution of the light-emitting structure.

A large-area display apparatus may include: a cover plate; a plurality of unit display panels arrayed on one surface of the cover plate, each of the unit display panels including a substrate; a display area defined at middle portions of the substrate; a non-display area around the display area; a pad portion disposed in the non-display area; a first terminal disposed outside the pad portion in the non-display area; and a second terminal apart from the first terminal disposed outside the pad portion in the non-display area; and a connecting member disposed between two unit display panels, the connecting member connecting the first terminals of the unit display panels and the second terminals of the unit display panels, respectively.

A quantum dot including a core and a shell disposed on an outer surface of the core. The core includes a first semiconductor nanocrystal including a Group II-VI compound. The shell includes a second semiconductor nanocrystal. An effective mass of the second semiconductor nanocrystal is about 0.5 times to about 2.0 times an effective mass of the first semiconductor nanocrystal and the quantum dot does not include cadmium, lead, mercury, or a combination thereof.

A quantum dot including a core and a shell disposed on an outer surface of the core. The core includes a first semiconductor nanocrystal including a Group II-VI compound. The shell includes a second semiconductor nanocrystal. An effective mass of the second semiconductor nanocrystal is about 0.5 times to about 2.0 times an effective mass of the first semiconductor nanocrystal and the quantum dot does not include cadmium, lead, mercury, or a combination thereof.

A display device including a laminate includes a wavelength selective absorption layer containing a resin, a dye including at least one of four specific dyes A to D, and an antifading agent for a dye, and includes a gas barrier layer, and a wavelength conversion material; the laminate includes a wavelength selective absorption layer containing a resin, a dye, and an electron migration-type antifading agent in which the energy level of the highest occupied molecular orbital and the lowest unoccupied molecular orbital satisfy a specific relational expression in relation to the dye, and includes the gas barrier layer; an organic electroluminescent display device includes this laminate. The gas barrier layer contains a crystalline resin, has a layer thickness of 0.1 μm to 10 μm, has a layer oxygen permeability of 60 cc/m.sup.2.Math.day.Math.atm or less, and is directly arranged on at least one surface of the wavelength selective absorption layer.

A method of forming a halide perovskite nanocrystal array having a plurality of halide perovskite nanocrystals arranged in a pattern can include coating an array of pens with a first ink comprising at least one first perovskite precursor having the formula AX and at least one second perovskite precursor having the formula BX′.sub.2 dissolved in a solvent. A is a cation, B is a metal, and X and X′ are each a halogen. The method further includes contacting a substrate with the coated pen array to thereby deposit the first ink indias a pattern of printed indicia on the substrate. The printed indicia form nanoreactors on the substrate and a halide perovskite nanocrystal nucleates and grows within each nanoreactor to form the halide perovskite nanocrystal array.

A method of patterning a light-emitting layer and a method of manufacturing a light-emitting diode device are provided, including: providing a substrate; forming a first electrode layer on the substrate; forming a sacrificial layer on the first electrode layer; patterning the sacrificial layer to remove the sacrificial layer in a first region of the substrate and retain the sacrificial layer in a second region of the substrate, the first electrode layer is at least partially located in the first region; forming a first carrier auxiliary layer in the first region and the second region; forming a light-emitting layer on the first carrier auxiliary layer, and removing the retained sacrificial layer in the second region and the first carrier auxiliary layer and the light-emitting layer covering the retained sacrificial layer, and retaining the first carrier auxiliary layer and the light-emitting layer in the first region, to pattern the light-emitting layer.

A method of patterning a light-emitting layer and a method of manufacturing a light-emitting diode device are provided, including: providing a substrate; forming a first electrode layer on the substrate; forming a sacrificial layer on the first electrode layer; patterning the sacrificial layer to remove the sacrificial layer in a first region of the substrate and retain the sacrificial layer in a second region of the substrate, the first electrode layer is at least partially located in the first region; forming a first carrier auxiliary layer in the first region and the second region; forming a light-emitting layer on the first carrier auxiliary layer, and removing the retained sacrificial layer in the second region and the first carrier auxiliary layer and the light-emitting layer covering the retained sacrificial layer, and retaining the first carrier auxiliary layer and the light-emitting layer in the first region, to pattern the light-emitting layer.

A light emitting device including a first electrode and a second electrode spaced from each other, and, a light emitting film between the first electrode and the second electrode, wherein the light emitting film has a first surface facing the second electrode and a second surface opposite thereto, the light emitting film includes a quantum dot layer including a plurality of quantum dots and a matrix including a metal chalcogenide, the plurality of quantum dots includes selenium, the matrix covers at least a portion of the quantum dot layer, the metal chalcogenide comprises zinc and sulfur, and in an X-ray photoelectron spectroscopic analysis of the first surface of the light emitting film, a mole ratio of zinc with respect to selenium is greater than or equal to about 2:1 and a mole ratio of sulfur with respect to selenium is greater than or equal to about 1.1:1.

A light emitting device including a first electrode and a second electrode spaced from each other, and, a light emitting film between the first electrode and the second electrode, wherein the light emitting film has a first surface facing the second electrode and a second surface opposite thereto, the light emitting film includes a quantum dot layer including a plurality of quantum dots and a matrix including a metal chalcogenide, the plurality of quantum dots includes selenium, the matrix covers at least a portion of the quantum dot layer, the metal chalcogenide comprises zinc and sulfur, and in an X-ray photoelectron spectroscopic analysis of the first surface of the light emitting film, a mole ratio of zinc with respect to selenium is greater than or equal to about 2:1 and a mole ratio of sulfur with respect to selenium is greater than or equal to about 1.1:1.