A method for manufacturing a display device including forming a first color filter transmitting a first color light on a base substrate to overlap first light-emitting areas, forming a second color filter transmitting a second color light different from the first color light to overlap second light-emitting areas and a first portion of a light-blocking area disposed between the first light-emitting areas, forming a partition wall including a first opening continuously overlapping the first light-emitting areas and the first portion of the light-blocking area, providing a first composition including a wavelength-converting material in the first opening, and curing the first composition to form a first color-converting layer.

An electroluminescent device, includes: a base substrate; a light emitting unit provided on the base substrate; a first accommodating structure surrounding the light emitting unit and provided on the base substrate; a first color rendering material filled in the first accommodating structure; a first inorganic thin film encapsulation layer covering the light emitting unit and the first color rendering material; a second accommodating structure provided on one side of the first inorganic thin film encapsulation layer distal to the first color rendering material; a second color rendering material filled in the second accommodating structure; and a second inorganic thin film encapsulation layer sealing the second color rendering material in the second accommodating structure; wherein the first color rendering material and the second color rendering material are capable of producing a color development reaction after mixture.

A light-emitting device emits light in a first direction and also emits light in a second direction opposite to the first direction. The light-emitting device includes a first light-emitting layer configured to emit light of a first color, and a second light-emitting layer configured to emit light of a second color different from the first color. The first light-emitting layer and the second light-emitting layer overlap each other as viewed from the first direction. The light-emitting device reduces a difference in tinge between emission light in the first direction and emission light in the second direction.

A light-emitting device emits light in a first direction and also emits light in a second direction opposite to the first direction. The light-emitting device includes a first light-emitting layer configured to emit light of a first color, and a second light-emitting layer configured to emit light of a second color different from the first color. The first light-emitting layer and the second light-emitting layer overlap each other as viewed from the first direction. The light-emitting device reduces a difference in tinge between emission light in the first direction and emission light in the second direction.

An organic optoelectronic device comprises an active layer comprising a conjugated polymer material which comprises a structure of Formula I:

##STR00001##

wherein

##STR00002##

, and X.sup.1 and X.sup.2 are independently selected from the groups consisting of: N, CH and -CR.sup.1. A.sup.2 and A.sup.3 are the same or different electron-withdrawing groups, and A.sup.2 and A.sup.3 are not simultaneously the same as A.sup.1. D.sup.1, D.sup.2 and D.sup.3 are electron-donating group. sp.sup.1 to sp.sup.6 are independently selected from aromatic ring and heterocyclic ring. a, b and c are real numbers, and 0 < a ≦1, 0 ≦b ≦1, 0 ≦c ≦1, a+b+c=1. d, e, f, g, h and i are independently selected from 0, 1 and 2. The organic optoelectronic device of the present invention has adjustable energy gap, and can be a high-performance OPV or a high-detectivity OPD.

Disclosed are a compound represented by Chemical Formula 1, and a film, an infrared sensor, and an electronic device including the compound.

##STR00001##

In Chemical Formula 1, Q.sup.1, Q.sup.2, X.sup.1, X.sup.2, R.sup.1, R.sup.2, and A.sup.1 are the same as in the specification.

Disclosed are a compound represented by Chemical Formula 1, and a film, an infrared sensor, and an electronic device including the compound.

##STR00001##

In Chemical Formula 1, Q.sup.1, Q.sup.2, X.sup.1, X.sup.2, R.sup.1, R.sup.2, and A.sup.1 are the same as in the specification.

The present disclosure relates to an organic electroluminescent compound, an organic electroluminescent material and an organic electroluminescent device comprising the same, a plurality of host materials comprising at least one first host material and at least one second host material, and an organic electroluminescent device comprising the same. By comprising the compound according to the present disclosure as a single host material or as a plurality of host materials, it is possible to produce an organic electroluminescent device having improved driving voltage, luminous efficiency, and/or lifetime properties compared to the conventional organic electroluminescent devices.

The present disclosure relates to an organic electroluminescent compound, an organic electroluminescent material and an organic electroluminescent device comprising the same, a plurality of host materials comprising at least one first host material and at least one second host material, and an organic electroluminescent device comprising the same. By comprising the compound according to the present disclosure as a single host material or as a plurality of host materials, it is possible to produce an organic electroluminescent device having improved driving voltage, luminous efficiency, and/or lifetime properties compared to the conventional organic electroluminescent devices.

An organic light-emitting display apparatus and a manufacturing method thereof have improved process stability and reliability by reducing damage to the organic light-emitting display apparatus during a manufacturing process. The organic light-emitting display apparatus includes: a substrate, a plurality of pixel electrodes, a pixel defining film, a plurality of hole control layers respectively arranged on the pixel electrodes, a plurality of emission layers respectively arranged on the hole control layers, a plurality of buffer layers respectively arranged on the emission layers, each of the buffer layers having a highest occupied molecular orbital (HOMO) energy level greater than the HOMO energy level of each of the plurality of emission layers, and an opposite electrode integrally provided over the buffer layers.