A method of manufacturing microstructure array, a microstructure array, a micro-light-emitting diode, and a method for manufacturing the same, and a display device. The method of manufacturing microstructure array includes: preparing a red light-emitting perovskite precursor solution, a green light-emitting perovskite precursor solution, and a blue light-emitting perovskite precursor solution; coating the red light-emitting perovskite precursor solution, the green light-emitting perovskite precursor solution, and the blue light-emitting perovskite precursor solution, on a substrate having partitioned first, second, and third regions to form a red light-emitting perovskite precursor film, a green light-emitting perovskite precursor film, and a blue light-emitting perovskite precursor film, respectively; disposing a mold having a plurality of concave micropatterns on the red light-emitting perovskite precursor film, the green light-emitting perovskite precursor film, and the blue light-emitting perovskite precursor film, respectively; heat-treating the red light-emitting perovskite precursor film, the green light-emitting perovskite precursor film, and the blue light-emitting perovskite precursor film in a plurality of concave micropatterns to obtain each of red light-emitting perovskite nanocrystals, green light-emitting perovskite nanocrystals, and blue light-emitting perovskite nanocrystals, and removing the mold to form a microstructure array.

The invention relates to an organic electroluminescent device comprising a light-emitting layer B comprising a host material H.sup.B, a thermally activated delayed fluorescence (TADF) material E.sup.B, and a depopulation agent S.sup.B.

Herein is described a light-emitting electrochemical cell comprising: a first electrode and a second electrode; a light-emitting layer disposed between the first and second electrodes and comprising a printed electrostatic ink comprising a thermoplastic resin having dispersed therein an electroluminescent material. Also described herein is a method of making an electrostatic ink, the method comprising: providing a carrier fluid (i) in which is dispersed a molten or a dissolved thermoplastic polymer resin and (ii) containing particles of an electroluminescent material suspended therein; effecting precipitation of the polymer resin from the carrier fluid onto the electroluminescent material to form particles comprising the electroluminescent material with a coating comprising the thermoplastic resin in solid form thereon. Also described herein is an electrostatic ink comprising: chargeable particles comprising an electroluminescent material having a coating of a thermoplastic resin thereon.

Herein is described a light-emitting electrochemical cell comprising: a first electrode and a second electrode; a light-emitting layer disposed between the first and second electrodes and comprising a printed electrostatic ink comprising a thermoplastic resin having dispersed therein an electroluminescent material. Also described herein is a method of making an electrostatic ink, the method comprising: providing a carrier fluid (i) in which is dispersed a molten or a dissolved thermoplastic polymer resin and (ii) containing particles of an electroluminescent material suspended therein; effecting precipitation of the polymer resin from the carrier fluid onto the electroluminescent material to form particles comprising the electroluminescent material with a coating comprising the thermoplastic resin in solid form thereon. Also described herein is an electrostatic ink comprising: chargeable particles comprising an electroluminescent material having a coating of a thermoplastic resin thereon.

The present disclosure discloses metal oxide nanoparticle ink, a method of preparing the same, a metal oxide nanoparticle thin film manufactured using the same, and a photoelectric device using the same. The method of preparing metal oxide nanoparticle ink according to an embodiment of the present disclosure includes a step of, using a ligand solution including a metal oxide and an organic ligand, synthesizing a first nanoparticle that is a metal oxide nanoparticle surrounded with the organic ligand; a step of preparing a dispersion solution by dispersing the first nanoparticle in a solvent; a step of preparing a second nanoparticle by mixing the dispersion solution and a pH-adjusted alcohol solvent and then performing ultrasonication treatment to remove the organic ligand surrounding the first nanoparticle; and a step of preparing metal oxide nanoparticle ink by dispersing the second nanoparticle in a dispersion solvent.

The invention relates to a an organic electroluminescent device comprising a light-emitting layer B comprising a host material H.sup.B, a first thermally activated delayed fluorescence (TADF) material EB, and an emitter material S.sup.B.

An optoelectronic device includes a semiconductor substrate, wherein a first transport layer is formed on a first partial region of the semiconductor substrate; a first insulation layer is formed on a second partial region around the first partial region; the first transport layer is formed on the first insulation layer; an interface layer is formed on the first transport layer; a light-emitting material layer containing perovskite material is formed on the interface layer; a second insulation layer is formed on the light-emitting material layer in the second partial region and on the light-emitting material layer near a second partial region side in the first partial region, so that the characteristic size of a single light-emitting pixel or effective working region is adjustable.

An optoelectronic device includes a semiconductor substrate, wherein a first transport layer is formed on a first partial region of the semiconductor substrate; a first insulation layer is formed on a second partial region around the first partial region; the first transport layer is formed on the first insulation layer; an interface layer is formed on the first transport layer; a light-emitting material layer containing perovskite material is formed on the interface layer; a second insulation layer is formed on the light-emitting material layer in the second partial region and on the light-emitting material layer near a second partial region side in the first partial region, so that the characteristic size of a single light-emitting pixel or effective working region is adjustable.

Provided are a method for manufacturing a perovskite nanocrystal particle light-emitter where an organic ligand is substituted, a light-emitter manufactured thereby, and a light emitting device using the same. A method for manufacturing an organic-inorganic-hybrid perovskite nanocrystal particle light-emitter where an organic ligand is substituted may comprise the steps of: preparing a solution including an organic-inorganic-hybrid perovskite nanocrystal particle light-emitter, wherein the organic-inorganic-hybrid perovskite nanocrystal particle light-emitter comprises an organic-inorganic-hybrid perovskite nanocrystal structure and a plurality of first organic ligands surrounding the organic-inorganic-hybrid perovskite nanocrystal structure; and adding, to the solution, a second organic ligand which is shorter than the first organic ligands or includes a phenyl group or a fluorine group, thereby substitutes the first organic ligands with the second organic ligand. Thus, since energy transfer or charge injection into the nanocrystal structure increases through ligand substitution, it is possible to further increase light emitting efficiency and increase durability and stability by means of a hydrophobic ligand.

A display device is provided. The display device includes a first substrate having a light-emitting region and a first transparent region. The first substrate includes a plurality of transistors and at least one light-emitting diode disposed in the light-emitting region. The light-emitting diode includes a first electrode electrically connected to the corresponding transistor and a first semiconductor layer disposed over the first electrode. The light-emitting diode also includes a second semiconductor layer disposed over the first semiconductor layer and a light-emitting layer disposed between the first semiconductor layer and the second semiconductor layer, wherein the distance between the top surface of the first electrode and the top surface of the second semiconductor layer is between 2 μm and 12 μm.