Disclosed are a light emitting element and a display device including the same, wherein a hole generation layer is further provided between a hole transport layer and an emission layer, in addition to an electron blocking layer, in order to control the speed of electrons and holes introduced into the emission layer, whereby it is possible to prevent accumulation of carriers at the electron blocking layer or the hole transport layer, and therefore it is possible to reduce turn-on voltage, to maintain uniform efficiency irrespective of change in current density, to prevent defects at specific gradation, and to increase lifetime.

An organic electroluminescent device, a display panel, a display device, and a light emitting device are described. The organic electroluminescent device includes an anode, an electron blocking layer, a buffer layer, an organic light emitting layer, and a cathode that are sequentially stacked. The thickness of the buffer layer is in a range from 1 nm to 100 nm. The material of the buffer layer comprises a compound shown in a first chemical formula as below:

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The organic electroluminescence device can improve the life of the device.

A display panel and manufacturing method thereof are provided. The display panel includes a substrate, a first electrode, a hole injection layer, a hole transport layer, an electron blocking layer, an organic electroluminescent layer, a hole blocking layer, an electron transport layer, an electron injection layer, and a second electrode arranged sequentially. The electron blocking layer corresponding to a green sub-pixel region of the organic electroluminescent layer is made of a p-type green light host material. Accordingly, the present invention effectively simplifies a manufacturing process, adjusts and balances charge carriers, and improves device performance.

Provided are a nitrogen-containing compound, an electronic element, and an electronic device, and the present disclosure belongs to the technical field of organic materials. The structure of the nitrogen-containing compound is as shown in chemical formula (1); and the nitrogen-containing compound can improve the properties of an electronic element.

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An object of the present invention is to provide a material for a highly efficient and highly durable organic EL device, and specifically, an organic compound with excellent properties including excellent hole-injecting/transporting performance, electron-blocking capability, and high stability in the form of a thin film. Another object of the present invention is to provide a highly efficient and highly durable organic EL device by using this compound. The present invention is directed to an arylamine compound having a fluorenyl skeleton-containing heterocycle structure, with excellent heat resistance and good hole-transporting capability. An organic EL device including this compound in its hole-transporting layer, electron-blocking layer, light-emitting layer, or hole-injecting layer exhibited good device characteristics.

Provided are a light-emitting device and an electronic apparatus. The light-emitting device includes a first electrode, a second electrode facing the first electrode, and an interlayer disposed between the first electrode and the second electrode. The interlayer includes an emission layer and an electron blocking layer, the electron blocking layer includes a first electron blocking layer and a second electron blocking layer. The first electron blocking layer includes a first compound, the second electron blocking layer comprises a second compound, and the first compound is different from the second compound.

An embodiment of the present disclosure provides an organic light emitting device, including an anode, a cathode, a light emitting layer arranged between the anode and the cathode, and an electron block layer arranged on a side of the light emitting layer facing the anode, the light emitting layer including a host material and a dopant material, the host material including an N-type material and a P-type material, and a material of the electron block layer and the N-type material satisfying: 2.75 eV≤|LUMO.sub.N-host−HOMO.sub.EBL|<3.05 eV; 0.3< HOMO.sub.N-host−HOMO.sub.EBL|≤1 eV, and |HOMO.sub.EBL|<|HOMO.sub.N-host|, a difference between a peak wavelength of a luminescence spectrum curve of an exciplex formed by the material of the electron block layer and the N-type material and an absorption band edge wavelength of an absorption spectrum curve of the dopant material being Δλ, Δλ>30 nm.

The present disclosure provides an organic light-emitting diode structure and a display device. The electron blocking layer, the luminescent layer and the hole blocking layer in the organic light-emitting diode structure satisfy: HOMO.sub.host−HOMO.sub.EBL≤0.3 eV, LUMO.sub.host>LUMO.sub.HBL, and HOMO.sub.HBL−HOMO.sub.host≥0.1 eV, wherein HOMO is the highest occupied molecular orbital, LUMO is the lowest unoccupied molecular orbital, host refers to the host material, EBL refers to the electron blocking layer, and HBL refers to the hole blocking layer.

According to one embodiment, a display device includes an anode, an organic EL element layer including a hole injection layer, a hole transport layer, an electron blocking layer, a light-emitting layer, a hole blocking layer, an electron transport layer and an electron injection layer, and a cathode, wherein ΔE2_LUMO is defined as a potential barrier between the electron transport layer and the hole blocking layer, and the light-emitting layer, ΔE2_HOMO is defined as a potential barrier between the hole transport layer and the electron blocking layer, and the light-emitting layer, and each of ΔE2_LUMO and ΔE2_HOMO is 0.1 eV or higher and 0.5 eV or less.

The present disclosure belongs to the technical field of organic materials, and provides a nitrogen-containing compound, an electronic component, and an electronic device. The nitrogen-containing compound has a structure represented by a Formula 1.

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