A display apparatus includes first to third pixels, and the first pixel includes a reflective layer; a first electrode; a light emitting layer; a second electrode; and a first color filter to transmit light of the first wavelength band. The reflective layer and the second electrode define a micro-cavity in which the light of the first wavelength band resonates. The light emitting layer includes a first organic light emitting material layer which emits the light of the first wavelength band, a second organic light emitting material layer which emits the light of the second wavelength band, and a third organic light emitting material layer which emits the light of the third wavelength band.

An organic light-emitting device includes: a first pixel electrode on a first emission region, a second pixel electrode on a second emission region, and a third pixel electrode on a third emission region; a counter electrode facing each of the first pixel electrode, the second pixel electrode, and the third pixel electrode; and an interlayer between the counter electrode and each of the first pixel electrode, the second pixel electrode, and the third pixel electrode. The interlayer includes an emission layer, and a hole transport region between the emission layer and each of the first pixel electrode, the second pixel electrode, and the third pixel electrode, the hole transport region includes a planarization layer that includes an amine-based compound represented by Formula 1, Formula 2A, or Formula 2B, and the amine-based compound has a crystallization peak having a noise-to-peak ratio of 1.75 or more in an X-ray diffraction (XRD) spectrum.

Provided are compounds, formulations comprising compounds, and devices that utilize compounds, where the devices include a substrate, a first electrode, an organic emissive layer comprising an organic emissive material disposed over the first electrode. The device includes an enhancement layer, comprising a plasmonic material exhibiting surface plasmon resonance that non-radiatively couples to the organic emissive material and transfers excited state energy from the organic emissive material to the non-radiative mode of surface plasmon polaritons. The enhancement layer is provided no more than a threshold distance away from the organic emissive layer, where the organic emissive material has a total non-radiative decay rate constant and a total radiative decay rate constant due to the presence of the enhancement layer. At least one of the organic emissive material and the organic emissive layer has a vertical dipole ratio (VDR) value of equal or greater than 0.33.

To provide a novel conductive film having two regions differing in the light transmittance, an optoelectronic device having such a conductive film, and a method for producing a conductive film by which such a conductive film can readily be produced.

A conductive film, which has a first region and a second region having a light transmittance higher than the first region,

the conductive film having a first film formed of a conductive material as a material and a resin film formed of a fluorinated polymer as a material,

the first film being disposed to overlap with at least the first region among the first region and the second region,

the resin film being disposed to overlap with the second region, and

the fluorinated polymer satisfying the following (1) and (2):

(1) when the temperature is increased at a temperature-increasing rate of 2° C./min under a pressure of 1×10.sup.−3 Pa, the temperature at which the thermogravimetric loss rate substantially reaches 100% is 400° C. or lower;

(2) when the temperature is increased at a temperature-increasing rate of 2° C./min under a pressure of 1×10.sup.−3 Pa, the temperature width from a temperature at which the thermogravimetric loss rate is 10% to a temperature at which it is 90%, is within 200° C.

A fabrication method for a light-emitting device includes providing a hole functional layer disposed between a quantum dot light-emitting layer and an anode, and providing an electron functional layer disposed between the quantum dot light-emitting layer and a cathode. The hole functional layer includes a mixed material of a hole transport material and a hole injection material. A thickness of the hole functional layer being selected from a thickness range corresponding to ⅓˜⅔ of abscissa between an origin and a first positive trough in a cavity standing wave of the mixed material. The absolute value of a difference between a thickness of the electron functional layer and a thickness corresponding to a first positive crest of a cavity standing wave of an electron functional material is less than or equal to 5 nm.

Provided are a light-emitting device and a manufacturing method thereof, and a display device, and relates to the field of display technology. The light-emitting device includes: a light-emitting unit located on one side of a backplane; and an encapsulation layer located on one side of the light-emitting unit away from the backplane. The encapsulation layer includes: a first inorganic layer; a second inorganic layer located on one side of the first inorganic layer away from the backplane; an organic layer located between the first inorganic layer and the second inorganic layer; and a third inorganic layer located between the first inorganic layer and the organic layer. The refractive index of the first inorganic layer, the refractive index of the third inorganic layer, and the refractive index of the organic layer decrease sequentially.

A full-color silicon-based organic light-emitting diode structure includes a metal anode layer, an organic functional layer, a metal cathode layer, an encapsulation layer, and a color filter layer. The organic functional layer includes a light-emitting layer configured to emit white light. The light-emitting layer includes a red light-emitting unit, a blue light-emitting unit, a green light-emitting unit, and a light-emitting common transport layer. The red light-emitting unit and the blue light-emitting unit are vapor-deposited on the same fine metal mask, and other structural film layers are vapor-deposited on a common metal mask. The present disclosure overcomes problems that red, green, and blue spectra cannot appear at the same time due to different lengths of red, green, and blue resonant cavities, the color gamut of the product is low due to large intensity differences, and the product life is affected due to large light loss caused by the color filter.

A full-color silicon-based organic light-emitting diode structure includes a metal anode layer, an organic functional layer, a metal cathode layer, an encapsulation layer, and a color filter layer. The organic functional layer includes a light-emitting layer configured to emit white light. The light-emitting layer includes a red light-emitting unit, a blue light-emitting unit, a green light-emitting unit, and a light-emitting common transport layer. The red light-emitting unit and the blue light-emitting unit are vapor-deposited on the same fine metal mask, and other structural film layers are vapor-deposited on a common metal mask. The present disclosure overcomes problems that red, green, and blue spectra cannot appear at the same time due to different lengths of red, green, and blue resonant cavities, the color gamut of the product is low due to large intensity differences, and the product life is affected due to large light loss caused by the color filter.

Provided are a heterocyclic compound and an organic light-emitting device including the same. The heterocyclic compound includes a fluoro-containing cyclic group. The heterocyclic compound does not include a carbazole group, a dibenzofuran group, a dibenzothiophene group, and/or a triphenylene group. The organic light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode and including an organic layer, the organic layer including an emission layer and at least one of the heterocyclic compound.

A light emitting device and a display apparatus including a phase shifting mirror are provided. The light emitting device includes a first electrode, a light emitting structure, a second electrode, and a phase shifting mirror. The phase shifting mirror has a number of patterns arranged in a periodic manner with an interval between adjacent patterns. Each pattern has a top surface and a side surface between the top surface of the respective pattern and the top surface of the first electrode. A first width at a bottom portion of the respective pattern directly adjacent to the top surface of the first electrode is greater than a second width of the top surface of the respective pattern, and the first width and the second width are less than a wavelength of light generated in the light emitting structure.