An ink composition includes: a quantum dot including one or more ligands on a surface thereof; a first monomer including one or more epoxy groups; and a second monomer including one or more oxetane groups, wherein the one or more ligands include one or more polar moieties. An electronic apparatus includes a film formed utilizing the ink composition.

A top emitting quantum dot light emitting diode (QLED) apparatus for an emissive display apparatus sub-pixel, with at least one bank defining an emissive region of the emissive display apparatus sub-pixel, includes an emissive layer deposited in the emissive region between a first electrode and a second electrode. The first electrode includes a reflective metal, and the second electrode has a transparent conductive electrode and an auxiliary electrode. The bank has a sloped portion adjacent the emissive region. The auxiliary electrode includes a reflective conductive metal and is configured to cover the sloped portion, and the sloped portion is configured at an angle, such that the auxiliary electrode reflects internally reflected light out of the sub-pixel in a viewing direction, and the auxiliary electrode is configured with a partially light scattering surface to broaden a reflective angle range of the auxiliary electrode.

The present application relates to an OLED light-emitting unit for use in a top-emission OLED substrate, which includes an anode, a cathode, and an organic functional layer arranged between the anode and the cathode. The anode includes a first metal layer and a second metal layer arranged in sequence, a separation layer is arranged between the first metal layer and the second metal layer, and a thickness of the second metal layer is within a preset threshold range such that metal atoms of the second metal layer are capable of being thermally agglomerated and rearranged under a preset condition to form a concave-convex structure on a surface of the second metal layer.

A display apparatus includes a substrate including a display area including a first display device, a second display device, and a third display device. The display apparatus includes a first protection layer disposed on the first, second, and third display devices, a first color conversion layer disposed on the first protection layer corresponding to the first display device and including first quantum dots converting incident light into first light, a second color conversion layer disposed on the first protection layer corresponding to the second display device and including second quantum dots converting incident light into second light, and a third color conversion layer disposed on the first protection layer corresponding to the third display device and including light scattering particles converting incident light into third light.

Disclosed are an array substrate, a display panel, a display device, and a manufacturing method of the array substrate. The array substrate includes a substrate layer, a passivation layer and a filter layer sequentially stacked. A side of the passivation layer facing the filter layer is provided with a concave-convex structure. By setting the concave-convex structure, when the light rays hit the uneven structure, the passivation layer region of the concave-convex structure can function as a lens. According to the principle of light scattering, light is scattered or diffused in the concave-convex structure to increase the propagation paths of light, more light can pass through the passivation layer and the light transmittance is improved. According to the principle of light diffraction, a new light source is formed at the position of the concave-convex structure to increase the light density and the light transmittance is improved.

A display device includes a substrate, a first light-emitting unit, a second light-emitting unit, a first light conversion unit, a second light conversion unit, a first buffer layer, a second buffer layer, and a sidewall buffer layer. The first light-emitting unit and the second light-emitting unit are disposed on the substrate. The first buffer layer is disposed between the first light conversion unit and the first light-emitting unit and has a first curved bottom surface. The second buffer layer is disposed between the second light conversion unit and the second light-emitting unit and has a second curved bottom surface. The sidewall buffer layer directly contacts the first light conversion unit and the second light conversion. A width of the first curved bottom surface is different from a width of the second curved bottom surface.

A display device includes a pixel unit configured to emit light. The display device includes a lower substrate, a plurality of light-emitting devices, an upper substrate, a bank layer, and a functional layer. The plurality of light-emitting devices is on the lower substrate. The upper substrate is on the lower substrate. The plurality of light-emitting devices is between the upper substrate and the lower substrate. The bank layer is on one surface of the upper substrate facing the lower substrate. The bank layer includes partition walls defining a central opening corresponding to the pixel unit and an auxiliary opening adjacent to the central opening. The functional layer fills the central opening. The functional layer includes at least one of quantum dots and scattering particles. The plurality of light-emitting devices includes a main light-emitting device overlapping the central opening and an auxiliary light-emitting device overlapping the auxiliary opening.

A light-emitting device includes a light-emitting layer that includes, in each of a plurality of pixels: a light-emitting region in which a drive current flows between a first electrode and a second electrode; and a non-light-emitting region in which no drive current flows between the first electrode and the second electrode. The light-emitting region is divided into a plurality of subregions by a non-light-emitting region in a plan view.

An optoelectronic component may include a semiconductor chip configured to emit radiation and a reflection element disposed in the beam path of the semiconductor chip where the reflection element is configured to reflect radiation. The reflection element may include a matrix material having diffuser particles and filler particles embedded therein. The diffuser particles are different from the filler particles. The filler particles may include a matrix having scatter particles embedded therein and/or a ceramic comprising the scatter particles in sintered form.

The present disclosure discloses a flexible substrate, a method of manufacturing the same, and a display device. The flexible substrate includes a plurality of substrate structure layers that are superimposed, and at least one of the plurality of substrate structure layers includes an organic layer, an inorganic layer and a photonic crystal layer that are superimposed.