Provided are a method for preparing an organic light-emitting display panel, an organic light-emitting display panel, and a display device. The method comprises: forming a pixel defining layer on one side of a substrate; forming a pixel supporting layer on the side of the pixel defining layer away from the substrate, and causing the orthographic projection of the surface of the pixel supporting layer that faces the pixel defining layer on the substrate to be within the range of the orthographic projection of the side surface of the pixel supporting layer away from the pixel defining layer on the substrate; forming a light-emitting functional layer on the side of the pixel supporting layer away from the pixel defining layer; and removing the pixel supporting layer to obtain an organic light-emitting display panel.

A flexible display device includes a flexible substrate and a conductive pattern. The flexible substrate includes a bending part. The conductive pattern includes a first conductive pattern layer and a second conductive pattern layer disposed on the first conductive pattern layer, and at least a portion of the conductive pattern may be disposed on the bending part. The first conductive pattern layer has a first thickness and includes a first material, and the second conductive pattern layer has a second thickness smaller than the first thickness and includes a second material different from the first material.

The present invention provides a resin film that is less likely to suffer peeling or creasing of a layer formed on the resin film in a high temperature process for producing a device and that can be used suitably to produce a product that requires transparency, where the resin film comprises a resin that has a repeating unit as represented by the chemical formula (1) and has a light transmittance of 68% or more at a wavelength of 400 nm, a glass transition temperature of 370° C. or more, and a weight loss starting temperature of 440° C. or more,

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where in the chemical formula (1), A denotes a tetravalent tetracarboxylic acid residue containing 2 or more carbon atoms and B denotes a divalent diamine residue containing 2 or more carbon atoms.

A mask frame assembly for an electronic display device includes a frame, and a mask coupled to the frame, in which the mask includes a pattern hole defining a first area over which material may be deposited, and a dam surrounding the pattern hole and defining a second area smaller than the first area over which the material may be deposited. A method of manufacturing a mask frame assembly for an electronic display device is also disclosed.

In a method of manufacturing a transparent display device, a substrate including a pixel region and a transmission region may be provided. A first electrode may be formed on the substrate in the pixel region, and a display layer may be formed on the first electrode. A second electrode facing the first electrode may be formed on the display layer, and a capping structure including a first capping layer and a second capping layer may be formed on the second electrode. The first capping layer may be formed on the second electrode in the pixel region and a first region of the transmission region by using a mask that has an opening, the mask may be shifted, and the second capping layer may be formed on the second electrode in the pixel region and a second region of the transmission region by using the shifted mask.

There is provided a display apparatus including: a first semiconductor substrate (100) provided with a drive circuit unit (40) including a pixel transistor group including a plurality of pixel transistors (400) that drives a light emitting unit (20); and a second semiconductor substrate (200) provided with the light emitting unit and a peripheral circuit unit (30) including a plurality of peripheral circuit transistors (300) that supplies a signal voltage to the drive circuit unit, the second semiconductor substrate being stacked on the first semiconductor substrate and bonded to the first semiconductor substrate, wherein a film thickness of a gate oxide film (404) of each of the plurality of pixel transistors is larger than a film thickness of a gate oxide film (304) of each of the plurality of peripheral circuit transistors.

An organic light emitting diode display device are provided. The organic light emitting diode display device includes: a substrate; a barrier layer, located on a side of the substrate; a first buffer layer, located on a side of the barrier layer; a first semiconductor layer, located on a side of the first buffer layer; a first gate insulating layer, located on a side of the first semiconductor layer; a first gate electrode, located on a side of the first gate insulating layer; a second buffer layer, located on a side of the first gate electrode; a second semiconductor layer, located on a side of the second buffer layer; a second gate insulating layer, located on a side of the second semiconductor layer; a second gate electrode, located on a side of the second gate insulating layer.

Display defects of a display device are reduced. The display quality of a display device is improved. A reliable display device is provided. A display device includes a substrate, a conductive layer over the substrate, and a transistor and a light-emitting element over the conductive layer. The transistor and the light-emitting element are each electrically insulated from the conductive layer. The transistor and the light-emitting element each overlap with the substrate with the conductive layer located therebetween. A constant potential is supplied to the conductive layer. The display device may further include a resin layer. In that case, the conductive layer overlaps with the substrate with the resin layer located therebetween. The resin layer has a thickness of more than or equal to 0.1 μm and less than or equal to 3 μm, for example. The resin layer has a 5% weight-loss temperature of lower than 400° C., for example.

A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a semiconductor substrate, active devices and transparent conductive patterns. The active devices are formed on the semiconductor substrate. The transparent conductive patterns are formed over the active devices and electrically connected to the active devices. The transparent conductive patterns are made of a metal oxide material. The metal oxide material has a first crystalline phase with a prefer growth plane rich in oxygen vacancy, and has a second crystalline phase with a prefer growth plane poor in oxygen vacancy.

Provided are a display panel and a manufacturing method therefor, and a display device. The display panel includes a base substrate first and second light emitting units, and first and second pixel circuits driving the first and second light emitting units to emit light, respectively the second pixel circuit includes first and second via holes, a drain in the second pixel circuit has first and connection terminals and a connection body extending along a first direction, the first via hole connects the first connection terminal with an active layer in the second pixel circuit, the connection body has a length greater than or equal to a length of a storage capacitor in the first direction, a first wire is on a side of a source-drain electrode layer, to the second connection terminal through the second via hole, connects to an anode of the second light emitting unit.