A display device and a method for fabricating the same are provided. The display device comprises pixels connected to scan lines, and to data lines crossing the scan lines, each of the pixels including a light emitting element, and a first transistor configured to control a driving current supplied to the light emitting element according to a data voltage applied from the data line, the first transistor including a first active layer having an oxide semiconductor, and a first oxide layer on the first active layer and having a crystalline oxide containing tin (Sn).

The present disclosure provides a pixel isolation wall and its manufacturing method. The pixel isolation wall includes an oleophilic layer arranged on a substrate on which a TFT array and a pixel electrode array is formed, and an oleophobic layer arranged on the oleophilic layer and configured to define, together with the oleophilic layer, a plurality of recess regions corresponding to the pixel electrode array.

Methods for manufacturing a flexible display device are provided. A flexible substrate is provided and a first bonding pattern, which encloses a display area, is formed on the flexible substrate. A second bonding pattern is formed on a rigid substrate. The first and second bonding patterns are bonded together to provide a bonding pattern between the flexible substrate and the rigid substrate. At least one display device is formed on the display area of the flexible substrate. The bonding pattern is removed by a cutting process performed so as to separate the flexible substrate having the display device thereon from the rigid substrate.

A display apparatus including a substrate having a display area in which a display device is provided to display an image, and a non-display area around the display area. The non-display area includes a bending area that is bent about a bending axis; an encapsulation layer arranged above the display area; a touch electrode arranged above the encapsulation layer; a touch wire connected to the touch electrode and extending to the non-display area; and a fan-out wiring connected to a signal wiring that applies electric signals to the display area. At least a portion of the fan-out wiring is arranged in the bending area, and the fan-out wiring includes the same material as the touch wire.

A method of manufacturing a display apparatus that is capable of reducing manufacturing costs and a defect rate during manufacturing, and a display apparatus. The method includes forming a plurality of display units over a mother substrate; attaching a temporary protective film to a lower surface of the mother substrate; cutting the mother substrate and the temporary protective film along a periphery of each of the plurality of display units to obtain a plurality of display panels, each including a first area, a second area, and a bent area between the first area and the second area; removing the temporary protective film from the plurality of display panels; and attaching a lower protective film to a lower surface of each of the plurality of display panels so as to correspond to the first area in each display panel.

A display device includes a display panel including a flexible region and a low flexibility region, wherein the flexible region may include a first transistor including a first semiconductor layer and a first gate electrode, a first conductor connected to the first semiconductor layer, and a first interlayer insulating layer between the first transistor and the first conductor. The low flexibility region may include a second transistor including a second semiconductor layer and a second gate electrode, a second conductor connected to the second semiconductor layer, and a second interlayer insulating layer between the second transistor and the second conductor. The first interlayer insulating layer may include an organic insulating material, the second interlayer insulating layer includes an inorganic insulating material, and a ratio of channel width to channel length of the first transistor may be different from that of the second transistor.

A display substrate, a method for manufacturing the display substrate and a display device are provided. The display substrate includes a basal substrate; a first electrode disposed on the basal substrate, the first electrode being deformable; a middle frame disposed on a side of the basal substrate departing from the first electrode; and a second electrode disposed between the middle frame and the basal substrate, forming a capacitor with the first electrode; the capacitance of the capacitor being variable based on deformation of the first electrode. According to the solution of the embodiments, the second electrode is arranged on the middle frame. The first electrode and the second electrode form a capacitor as a pressure sensor. Therefore, the pressure sensor can be integrated into the display substrate, and the space occupied by the pressure sensor in the display substrate is reduced.

A display device includes a display substrate including at least one step portion, and a thin film encapsulation layer above the display substrate, the thin film encapsulation layer including a buffer layer configured to reduce a height difference due to the at least one step portion and a barrier layer above the buffer layer, the buffer layer including a plurality of sub-layers and interfaces between the plurality of sub-layers, and the interfaces including a curved surface changing from a concave shape to a convex shape toward a portion overlapping the step portion from an outer portion of the step portion.

A deposition mask extending in a first direction may include: a pattern portion including a plurality of pattern holes; and a clamping portion including a protrusion portion to be attached to the clamp and an indentation portion formed in a direction toward the pattern portion, wherein the pattern portion may include a blocking portion that at least partially overlaps the protrusion portion in the first direction and has an area gradually decreasing in a second direction from the protrusion portion toward the indentation portion, the second direction crossing the first direction.

A semiconductor device including a transistor having high reliability is provided. The semiconductor device includes a transistor. The transistor includes first and second gate electrodes, a source electrode, a drain electrode, first to third oxides, first and second barrier films, and first and second gate insulators. The first barrier film is located over the source electrode, the second barrier film is located over the drain electrode, and the first and second barrier films each have a function of blocking oxygen and impurities such as hydrogen.