In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore, as the insulating film provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline-earth metal ion is used.

An organic light-emitting device includes, in order an anode, an organic layer comprising a light-emitting layer, and a cathode. The anode is a laminated structure comprising in order: a first anode layer comprising a metal compound or a conductive oxide; a second anode layer that is a reflective layer; and a third anode layer comprising a metal compound or a conductive oxide. Light generated in the light-emitting layer is extracted through the cathode.

An organic light emitting display and a method of manufacturing the same. The organic light-emitting display is a transparent display where one can see through the display to view an image on the other side of the display. Each pixel of the display has a first region that includes an organic light emitting diode and a thin film transistor, and a larger second region that is transparent. The second region is made of either transparent layers or ultra-thin layers so that light is not blocked. A second electrode of the display may include magnesium and may be produced by a selective deposition process, so that use of a fine metal mask may be avoided.

A thin film transistor and its manufacturing method, an array substrate and its manufacturing method, and a display device are provided. The thin film transistor includes a gate electrode, a source electrode, a drain electrode, an active layer and a gate insulation layer. The gate insulation layer is provided above the active layer, the gate, the source electrode and the drain electrode are provided on a same layer above the gate insulation layer, the active layer and the source electrode are connected through a first connection electrode, and the active layer and the drain electrode are connected through a second connection electrode. The thin film transistor can be formed by three times of patterning processes, by which the process time period is shortened, the process yield is improved, and the process cost is reduced, and so on.

An organic EL display panel includes: a first pixel electrode and a red organic light-emitting layer sequentially disposed in red subpixel region; a second pixel electrode and a green organic light-emitting layer sequentially disposed in green subpixel region; a third pixel electrode and a first blue organic light-emitting layer sequentially disposed in blue subpixel region; a charge generation layer disposed above the red, green, and first blue light-emitting layers; a second blue organic light-emitting layer disposed on the charge generation layer in the entire subpixel regions; a counter electrode disposed above the second blue light-emitting layer in the entire subpixels regions; a first light conversion layer disposed above the second blue light-emitting layer in the red subpixel region, and converts blue light to red light; and a second light conversion layer disposed above the second blue light-emitting layer in the green subpixel region, and converts blue light to green light.

An organic light-emitting diode (OLED) display substrate, a manufacturing method thereof and a display panel are provided. The OLED display substrate has pixel regions and includes a base substrate and a pixel defining layer disposed on the base substrate; in regions of the pixel defining layer corresponding to the pixel regions, accommodation parts penetrating the pixel defining layer are disposed, and the pixel defining layer is further provided with guide parts disposed corresponding to the accommodation parts, the guide parts are located on a periphery of the corresponding accommodation parts and formed by recessed areas which are formed on a side of the pixel defining layer away from the base substrate, the recessed areas do not penetrate the pixel defining layer, and an orthographic projection of the guide part on the base substrate is directly coupled to an orthographic projection of the corresponding accommodation part on the base substrate.

A thin film transistor (TFT) array substrate is disclosed. In one aspect, the substrate includes a buffer layer formed over a substrate, a storage capacitor formed in the buffer layer and including a first electrode and a second electrode surrounding and insulated from the first electrode and a driving TFT formed over the buffer layer.

A transparent OLED display panel, a manufacturing method therefor, and a display apparatus, relate to the field of display technologies. The transparent OLED display panel has a plurality of transparent regions (a) and a plurality of display regions (b), wherein the transparent regions and the display regions are alternately arranged (a) in a first direction. The transparent OLED display panel includes a plurality of pixels (1) arranged in a second direction and a plurality of data lines (31, 32) extending along the first direction; each of the pixels (1) includes a plurality of sub-pixels (11), and the sub-pixels (11) in each display region (b) include a row of first sub-pixels (111) and a row of second sub-pixels (112) both arranged in the second direction; and the pixel at least includes one first sub-pixel (111) and one second sub-pixel (112) adjacent to each other in the first direction. In the same display region (b), one first sub-pixel (111) and one second sub-pixel (112) adjacent to each other in the first direction are connected to the same data line (31, 32). The transparent OLED display panel reduces an area of the display regions (b) occupied by the data lines (31, 32), such that more sub-pixels (11) can be arranged, thereby improving the resolution of the display panel.

A display panel and a method for manufacturing the same, and a display device. The display panel includes a first display area and a second display area. A light transmittance of the first display area is greater than a light transmittance of the second display area, and the display panel includes: a substrate; and a light-emitting element layer including a first electrode, a light-emitting structure located on the first electrode, and a second electrode assembly located on the light-emitting structure. The second electrode assembly includes: a light-transmitting electrode, at least partially located in the first display area; a light-transmitting block located in the first display area and stacked with the light-transmitting electrode; and a second electrode located in the second display area. A material of the second electrode and a material of the light-transmitting electrode nonbind with each other.

The present disclosure provides a display device and an OLED panel thereof, and a method for manufacturing an OLED panel. The OLED panel includes: a substrate (10), and a light-emitting structure (11) disposed on the substrate (10), wherein at least one film layer (12) and a planarization layer disposed on the at least one film layer (12) are disposed between the substrate (10) and the light-emitting structure (11); the OLED panel comprises a first region (12a) and a second region (12b), wherein a source (124a) and a drain (124b) of the transistor are disposed in the first region (12a); wherein the at least one film layer (12) comprises an insulating layer, wherein a thickness of the insulating layer in the first region (12a) is less than a thickness of the insulating layer in the second region (12b). According to the embodiments of the present disclosure, the global flatness of the at least one film layer is improved, thereby improving the planarization effect of the planarization layer, and further improving the quality of the organic light-emitting layer and the brightness uniformity of the sub-pixels.