Patent classifications
H10K59/1201
DISPLAY DEVICE, AND METHOD FOR MANUFACTURING DISPLAY DEVICE
A display device includes a sealing layer including a lower insulating film, an organic insulating film including an ink material cured, and an upper insulating film. The lower insulating film includes a first lower insulating film and a second lower insulating film layered on the first lower insulating film and having a higher lyophilicity with respect to the ink material than a lyophilicity of the first lower insulating film. The first lower insulating film is exposed from the second lower insulating film between a first bank and a second bank in a plan view and an end portion of the exposed first lower insulating film is provided on a side opposite to a display region with respect to the second bank, and an end portion of the second lower insulating film is provided between the first bank and the second bank in a plan view.
DISPLAY DEVICE AND MANUFACTURING METHOD THEREFOR
A display device includes: a display region and a non-display region surrounding the display region; a first bending line defined on the display region, where the first bending line includes a portion extending in a first direction; a first region located at one side of the first bending line; a second region located at the other side of the first bending line and bent from the first region in one direction; a first alignment mark disposed in the first area and having a first area; and a second alignment mark disposed in the second area and facing toward the first alignment mark while the first bending line is disposed between the first and second alignment marks. The second alignment mark has a second area different from the first area.
DISPLAY SUBSTRATE, MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE
A display substrate includes: a base substrate; a light-emitting unit in each pixel region and including a first electrode, an organic light-emitting layer, and a second electrode sequentially disposed in a direction away from the base substrate; an auxiliary conductive layer between the light-emitting unit and the base substrate; a pixel circuit in each pixel region and including a driving transistor. The auxiliary conductive layer is on a side of the pixel circuit away from the base substrate, the second electrode has a portion extending out of the pixel region and coupling to the auxiliary conductive layer through a via hole not overlapping the pixel region, the auxiliary conductive layer is insulated and spaced apart from the first electrode and has a mesh or chain shape, and a material of the auxiliary conductive layer is the same as a material of the first and second electrodes of the driving transistor.
FABRICATING METHOD OF DISPLAYING BASE PLATE, DISPLAYING BASE PLATE AND DISPLAYING DEVICE
The present application provides a fabricating method of a displaying base plate, a displaying base plate and a displaying device, wherein the displaying base plate includes a tapping region, an edge region surrounding the tapping region and a displaying region surrounding the edge region, and the displaying base plate within the edge region includes: a substrate base plate, and a planarization layer provided on one side of the substrate base plate; and a spacer wall and an organic functional layer that are provided on one side of the planarization layer that is further away from the substrate base plate, wherein the organic functional layer is partitioned on sides of the spacer wall; wherein a material of the spacer wall includes a photoinduced deformed material that has had an expansive deformation and a cross-linking reaction.
Display Circuitry with Semiconducting Oxide Transistors
A display may include an array of pixels. Each pixel in the array includes an organic light-emitting diode coupled to associated semiconducting oxide transistors. The semiconducting oxide transistors may exhibit different device characteristics. Some of the semiconducting oxide transistors may be formed using a first oxide layer formed from a first semiconducting oxide material using first processing steps, whereas other semiconducting oxide transistors are formed using a second oxide layer formed from a second semiconducting oxide material using second processing steps different than the first processing steps. The display may include three or more different semiconducting oxide layers formed during different processing steps.
DISPLAY DEVICE INCLUDING TOUCH SENSOR AND MANUFACTURING METHOD FOR THE SAME
A display device is provided that includes a substrate including an active area and a non-active area, a planarization film disposed over the substrate, an anode electrode disposed on the planarization film and including a first hole in the non-active area, a bank disposed on the anode electrode, a cathode electrode disposed on the bank, an encapsulation layer disposed on the cathode electrode, and a touch sensor disposed on the encapsulation layer and including a touch line in the non-active area. Here, the first hole may be disposed not to overlap with the touch line.
DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME
A display apparatus includes a substrate including a display area and a peripheral area; a thin-film transistor disposed on the substrate and including a semiconductor layer; a conductive layer disposed between the substrate and the semiconductor layer and including a pad electrode disposed in the peripheral area; a first insulating layer disposed between the conductive layer and the semiconductor layer and including a first opening exposing at least a part of an upper surface of the pad electrode; and a second insulating layer disposed on the thin-film transistor and including a second opening coinciding with the first opening, wherein an opening area of the second opening of the second insulating layer is greater than an opening area of the first opening of the first insulating layer.
DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME
A display apparatus includes: a substrate including a display area, and a peripheral area; and a pad unit at the peripheral area, the pad unit including: a first conductive layer; a second conductive layer on the first conductive layer, and having a first opening; a third conductive layer on the second conductive layer, and having a second opening overlapping with the first opening, the second opening having an area less than an area of the first opening at a top surface of the second conductive layer; an organic protective layer filling the first opening, and having a third opening overlapping with the second opening; and an additional metal layer covering a top surface of the first conductive layer exposed through the first opening, an inner surface of the second opening, an inner surface of the third opening, and a portion of a top surface of the third conductive layer.
Electroluminescence Display Apparatus
A display apparatus includes a substrate including an emission area and a non-emission area surrounding the emission area, a planarization layer formed on the substrate, a light emitting device disposed on the planarization layer, and including an anode electrode, and a separation layer disposed to be spaced apart from the anode electrode on the planarization layer, wherein the planarization layer is formed to overlap at least a portion of the non-emission area and includes a trench portion formed by removing at least a portion of the planarization layer, the trench portion at least partially overlaps an end of each of the anode electrode and the separation layer in the non-emission area, the light emitting device further including a light emitting layer and a cathode electrode sequentially formed on the anode electrode, and the light emitting layer and the cathode electrode are discontinuously formed in the trench portion.
DISPLAY DEVICE AND MANUFACTURING METHOD OF DISPLAY DEVICE
A circuit capable of high-speed operation and a pixel are integrally formed over the same substrate. A first metal oxide film, a first metal film, and an island-shaped first resist mask are formed over a first insulating layer. An island-shaped first metal layer and an island-shaped first oxide semiconductor layer are formed and a part of a top surface of the first insulating layer is exposed; then, the first resist mask is removed. A second metal oxide film, a second metal film, and an island-shaped second resist mask are formed over the first metal layer and the first insulating layer. An island-shaped second metal layer and an island-shaped second oxide semiconductor layer are formed; then, the second resist mask is removed. The first metal layer and the second metal layer are removed.