A display device includes a display panel including a main portion, a first bent portion and a second bent portion each extending from the main portion, and a corner portion which connects the first bent portion and the second bent portion to each other and is bendable relative to the main portion. The corner portion which is bendable includes a plurality of protrusion patterns partially disconnected from each other and each bendable relative to the main portion, and each of the plurality of protrusion patterns including a display pixel

A light-emitting device includes: a first electrode and a second electrode that are superposed; an emitting layer (EML) located between the first electrode and the second electrode; and an electron transport layer (ETL) located between the first electrode and the EML. The ETL includes a first surface proximate to the EML and a second surface proximate to the first electrode, oxygen vacancies is formed in the ETL, and a concentration of oxygen vacancies in the ETL gradually increases from the second surface to the first surface.

A method of manufacturing a display panel including: sequentially forming a first layer and a second layer on a carrier substrate such that bottom surfaces of the first layer and the second layer face the carrier substrate; forming a panel substrate including a first base layer on a top surface of the second layer such that a bottom surface of the first base layer faces the second layer; forming a display layer on the panel substrate; and separating the panel substrate from the second layer.

A display device includes: a substrate; and a semiconductor layer disposed on the substrate, and including a first area, a second area, and a third area that are sequentially positioned by dividing the semiconductor layer into three areas in a thickness direction of the semiconductor layer, wherein the semiconductor layer includes polycrystalline silicon, a concentration of fluorine contained in the semiconductor layer has a first peak value in the first area and a second peak value in the third area, and the first peak value of the concentration of the fluorine in the semiconductor layer is about 30% or less of the second peak value of the concentration of the fluorine in the semiconductor layer.

A light emitting element includes: a light emitting unit (30); an intermediate layer (40) covering the light emitting unit (30); an optical path control unit (70) disposed on a part of the intermediate layer (40) and having positive optical power; and a covering layer (71) covering an outer region (70A) of the intermediate layer (70) surrounding a part (70B) of the intermediate layer (70) on which the optical path control unit (70) is formed and the optical path control unit (70), and satisfies n.sub.0≥n.sub.1>n.sub.2, in which n.sub.0 represents a refractive index of a material constituting a part (41) of the intermediate layer (40) in contact with the optical path control unit (70), n.sub.1 represents a refractive index of a material constituting the optical path control unit (70), and n.sub.2 represents a refractive index of a material constituting the covering layer (71).

A display device includes a substrate comprising a display area and a non-display area, a via layer disposed on the substrate, a pixel electrode disposed on the via layer in the display area, and a pixel-defining layer disposed on the pixel electrode and a part of the via layer exposed by the pixel electrode, wherein the pixel-defining layer comprises a first area disposed in the display area and comprising an opening exposing a part of the pixel electrode, and a second area disposed in the non-display area and comprising an end, and wherein the first area comprises a first side surface defining the opening, wherein the second area comprises a second side surface at the end, wherein a first taper angle which is a taper angle of the first side surface is different from a second taper angle which is a taper angle of the second side surface.

Disclosed is a display device and a method of manufacturing the same having improved reliability. In the display device, at least one of a plurality of dielectric films disposed between an oxide semiconductor layer and a light-emitting device includes a lower region disposed on the oxide semiconductor layer and an upper region disposed on the lower region, the upper region including a trap element configured to trap hydrogen, whereby reliability of a thin film transistor including the oxide semiconductor layer is improved.

According to one embodiment, in a display device, a first transistor includes a first semiconductor layer, in which a first source region includes a first region in contact a the first source electrode and a first drain region includes a second region in contact with a first drain electrode, the first source and drain regions, the first region, and the second region each include a first impurity element, and, in a region close to an interface between the first semiconductor layer and a first insulating layer, a concentration of the first impurity element included in the first and second regions is higher than a concentration of the first impurity element included in the first source region and the first drain region.

Provided are a display apparatus, of which a display area is expanded for the representation of images in an area where an electronic component is located and in which the degradation in performance of the electronic component is reduced, and a method of manufacturing the display apparatus. The display apparatus includes a substrate, a light-emitting element disposed on the substrate, and a lower metal layer disposed under the light-emitting element. The lower metal layer includes a first surface facing the substrate and including an uneven portion, and a second surface opposite to the first surface. The first surface of the lower metal layer has surface roughness greater than that of the second surface of the lower metal layer

A display apparatus comprising a driving circuit that includes a storage capacitor and at least one thin film transistor, and a light-emitting device that includes a region disposed outside the driving circuit and a region overlapping with the storage capacitor, each of capacitor electrodes of the storage capacitor being a transparent electrode having a relatively higher transmittance, so that the quality of the image realized on an outer surface of a device substrate which supports the driving circuit and the light-emitting device of each pixel area can be improved.