The present disclosure provides an array substrate, a method for manufacturing the array substrate and a display device, and belongs to the field of display technology. The array substrate of the present disclosure includes: a base substrate; a light-blocking layer disposed on the base substrate; a thin film transistor disposed on the light-blocking layer; an organic light-emitting diode which is disposed on the light-blocking layer and has a first electrode coupled to a drain electrode of the thin film transistor; the light-blocking layer is provided with a plurality of scattering particles, and orthographic projections of at least a portion of the scattering particles on the base substrate are overlapped with an orthographic projection of the organic light-emitting diode on the base substrate, so as to scatter light emitted from the organic light-emitting diode.

An organic light emitting diode display including: a substrate; a TFT on the substrate; a planarization layer on the TFT; a pixel electrode on the planarization layer, wherein the pixel electrode includes upper and lower layers including a transparent conductive oxide and an intermediate layer including silver; an etch stop layer on the pixel electrode, wherein an upper surface of the pixel electrode is exposed by the etch stop layer; a partition on the etch stop layer, wherein the upper surface of the pixel electrode is exposed by the partition; an organic emission layer on the upper surface of the pixel electrode where the upper surface of the pixel electrode is exposed by the etch stop layer and the partition; and a common electrode on the organic emission layer and the partition, wherein the etch stop layer covers an edge and a side surface of the pixel electrode.

Disclosed are a display substrate, a method for manufacturing the same, and a display device. The display substrate includes: a base substrate, and a multilayered functional film layer on the base substrate. The multilayered functional film layer is provided with an opening penetrating through the multilayered functional film layer. A light-shielding film is on a side wall of the opening.

A display device includes a light-emitting portion and a drive circuit. The drive circuit includes a transistor that drives the light-emitting portion and includes a first diffusion layer and a first contact electrode, the first diffusion layer including no silicide formed in a silicon region, the first contact electrode being electrically connected to the first diffusion layer.

A display device may include a display panel including a display area, a non-display area which may be disposed on a periphery of the display area, and a pad area which may be disposed on one side of the non-display area. The display panel may include data lines disposed in the display area of the display panel along a second direction which intersects a first direction, and connection lines disposed in the display area of the display panel along the first direction. A first data line among the data lines may be connected to a first connection line among the connection lines.

The present application provides a display substrate and a method for manufacturing the same and a display device. In the display substrate, each sub-pixel includes: a power signal line; sub-pixel driver circuits and a shielding pattern. The sub-pixel driver circuit includes a driver transistor and a compensation transistor of double-gate structure. The shielding pattern is electrically coupled with the power signal line in the sub-pixel which is adjacent the shielding pattern in a second direction. There is an overlap area between an orthographic projection of the shielding pattern onto the base substrate and an orthographic projection of the conductor pattern onto the base substrate; the second direction intersects the first direction. The sub-pixels include multiple first sub-pixels and multiple second sub-pixels; the overlap area in the first sub-pixel is greater than the overlap area in the second sub-pixel.

The present disclosure provides a quantum dot (QD) light emitting diode including: a first electrode; a second electrode facing the first electrode; a QD emitting material layer positioned between the first electrode and the second electrode and including a QD and an organic material; a hole auxiliary layer positioned between the first electrode and the QD emitting material layer; and an electron auxiliary layer positioned between the QD emitting material layer and the second electrode, wherein the organic material has a highest occupied molecular orbital (HOMO) level higher than a material of the hole auxiliary layer.

A display substrate, a preparation method thereof and a display apparatus. The display substrate comprises a substrate, multiple pixel units arranged on the substrate and a color filter layer arranged on the pixel unit, wherein the color filter layer comprises color optical filters of different colors and a touch control structure layer arranged between the color optical filters of different colors; the touch control structure layer comprises a touch control connection electrode, a first coating protective layer covering the touch control connection electrode and a touch control electrode arranged on the first coating protective layer, the touch control electrodes comprise a first touch control electrode and a second touch control electrode, and at least one of the first touch control electrode and the second touch control electrode is connected with the touch control connection electrode through a via hole penetrating through the first coating protective layer.

A deposition mask includes a metal mask body in which a deposition opening is defined; and a coating layer including aluminum oxynitride, on an outer surface of the metal mask body.

A display device includes a thin film transistor on a base substrate and a signal wiring electrically connected to the thin film transistor. The signal wiring includes a main conductive layer including copper, and a capping layer including titanium the capping layer overlapping a portion of an upper surface of the main conductive layer. The signal wiring has a taper angle in a range of about 70° to about 90°. A thickness of the capping layer is in a range of about 100 Å to about 300 Å, and a thickness of the main conductive layer is in a range of about 1,000 Å to about 20,000 Å.