An active matrix substrate includes: a first oxide semiconductor layer including a first channel region; a first gate electrode disposed on the substrate side of the first oxide semiconductor layer; a channel protection layer disposed on a side of the first oxide semiconductor layer opposite to the substrate and covering the first channel region; a first TFT having a first source electrode and a first drain electrode in an upper layer of the channel protection layer; a second oxide semiconductor layer; a second gate electrode disposed on a side of the second oxide semiconductor layer opposite to the substrate; and the second TFT having a second source electrode and a second drain electrode disposed on an interlayer insulating layer that covers the second gate electrode, wherein the first oxide semiconductor layer and the second oxide semiconductor layer are formed of the same layered oxide semiconductor film, the layered oxide semiconductor film has a layered structure including a high mobility oxide semiconductor film and a low mobility oxide semiconductor film disposed on the substrate side of the high mobility oxide semiconductor film and having a lower mobility than a mobility of the high mobility oxide semiconductor film, and the channel protection layer of the first TFT and the gate insulating layer of the second TFT are formed of the same insulating film.

A display device includes a substrate including a display area and a non-display area; a first overcoating layer disposed on the substrate and including a base portion and a protruding portion protruding from the base portion; a first hydrogen blocking layer disposed on a top surface of the protruding portion in the display area; a first electrode covering the base portion and the first hydrogen blocking layer; a bank disposed on a part of the first electrode; an organic layer disposed on the first electrode and the bank; and a second electrode disposed on the organic layer.

An electroluminescent display device includes a substrate having a display area surrounding a through-hole, and a non-display area disposed between the display area and the through-hole, a thin-film transistor disposed on an upper portion of the display area and a light-emitting element connected to the thin-film transistor, a plurality of insulating layers disposed between the substrate and the thin-film transistor, a planarization layer disposed between the thin-film transistor and the light-emitting element, and at least one anti-connection part disposed in the non-display area and including the plurality of insulating layers and the planarization layer, in which the planarization layer and the plurality of insulating layers, which constitute the anti-connection part, and each of the planarization layer and the plurality of insulating layers has an undercut shape in which a bottom surface is narrower than a top surface, so that the light-emitting part of the light-emitting element is disconnected in the through-hole by the anti-connection part, thereby penetration of moisture through the light-emitting part may be inhibited.

A display device according to some embodiments includes: a substrate; a plurality of common voltage lines positioned on the substrate; a plurality of connection electrodes positioned on a plurality of common voltage lines; an emission layer positioned on the connection electrode; and a common electrode positioned on the emission layer, wherein the emission layer has a plurality of first openings positioned on at least a portion of a plurality of connection electrodes, the common electrode is electrically connected to the connection electrode through a plurality of first openings, and a pitch of a first direction of a plurality of first openings has a range of about 0.1 mm to about 2.5 mm.

A display apparatus includes a substrate, a semiconductor layer on the substrate, the semiconductor layer including an oxide semiconductor, a channel region and a first region which extends from the channel region to a first edge of the semiconductor layer and has a lower resistance than that of the channel region, a first inorganic insulating layer covering the semiconductor layer and including a first contact hole which overlaps the first region, a first electrode on the first inorganic insulating layer, overlapping the first region and electrically connected to the first region through the first contact hole, a gate electrode on the first inorganic insulating layer and overlapping the channel region, a second inorganic insulating layer covering the first electrode and the gate electrode, and a display element on the second inorganic insulating layer.

An encapsulated organic light emitting device and a fabrication method thereof are disclosed. An encapsulated organic light emitting device according to an example embodiment includes a plurality of organic light emitting devices formed on a substrate, a partition wall disposed to separate the plurality of organic light emitting devices, a hydrophobic oil filling a housing structure defined by the partition wall, a polymer thin film formed on surfaces of the hydrophobic oil and the partition wall using a photo-curable precursor, and a multi-film laminated on the polymer thin film.

An apparatus for manufacturing a display device includes a chamber in which a display substrate is arranged, a lamp portion arranged outside or inside the chamber irradiating light, and a mask arranged inside the chamber to expose a portion of the display substrate and to shield another portion of the display substrate. The mast includes a hole through which the light irradiated from the lamp portion passes, and the lamp portion includes a flash lamp or a xenon lamp.

A display device and a manufacturing method thereof are provided. The display device includes a substrate, a shielding layer, a semiconductor layer, and a first gate electrode layer. The shielding layer is disposed on a side of the substrate. The semiconductor layer is disposed on a side of the shielding layer away from the substrate. The shielding layer is at least partially overlapped with the semiconductor layer. The first gate electrode layer is disposed on a side of the semiconductor layer away from the substrate. The first gate electrode layer is at least partially overlapped with the semiconductor layer and is electrically connected to the shielding layer. The manufacturing method of the display device is used to manufacture the display device.

A display device including: a display unit including a plurality of pixels; and a color converter overlapping the display unit. The color converter includes a first color converter, a second color converter, a transmitter, and a light blocking member. The first color converter includes a first color converting layer including first semiconductor nanocrystals, and a first color filter overlapping the first color converting layer. The second color converter includes a second color converting layer including second semiconductor nanocrystal, and a second color filter overlapping the second color converting layer, the transmitter includes a transmitting layer. The light blocking member includes a light blocking member disposed among the adjacent first color converting layer, the second color converting layer, and the transmitting layer, a metal layer disposed on the light blocking member, and a liquid repellent cover layer overlapping the metal layer.

A display apparatus includes a substrate, a gate electrode overlapping the substrate, and a semiconductor layer positioned between the substrate and the gate electrode. The semiconductor layer includes a first layer and a second layer positioned between the first layer and the gate electrode. A hydrogen content of the first layer is greater than a hydrogen content of the second layer.