H10K59/1201

Display device and method of manufacturing display device

Provided is a display device including a display panel having a plurality of pixel regions, a first insulating layer on the display panel, having a first refractive index, and having a plurality of first openings defined in regions which overlap the plurality of pixel regions, a second insulating layer directly on the first insulating layer and having a plurality of second openings defined in regions which correspond to the plurality of first openings, and a third insulating layer covering the display panel, the first insulating layer, and the second insulating layer and having a second refractive index higher than the first refractive index, wherein the third insulating layer may overlap the plurality of pixel regions on a plane.

Display substrate and driving method thereof

A display substrate and a driving method thereof are provided. The display substrate includes a base substrate containing a monocrystalline silicon layer, a thickness of the monocrystalline silicon layer being less than that of the base substrate; an array circuit layer, disposed on the base substrate and including a plurality of transistors, each of which has an active layer inside the monocrystalline silicon layer; and a plurality of light-emitting elements, located at a side of the array circuit layer away from the base substrate. The array circuit layer includes a scan driving circuit, a data driving circuit and a plurality of pixel sub-circuits, and the plurality of pixel sub-circuits are connected to the plurality of light-emitting elements, respectively, to form a plurality of sub-pixels.

Photopolymerizable resin composition, display device using same, and manufacturing method thereof

A photopolymerizable resin composition includes a first layer and a second layer; and a barrier layer disposed between the first layer and the second layer, the barrier layer includes one or more of SiNx, SiOx, SiON, Mo, a Mo oxide, Cu, a Cu oxide, Al, an Al oxide, Ag, and a Ag oxide.

Array substrate and manufacturing method thereof including via hole to facilitate dehydrogenation, display panel, and display device

Provided are an array substrate and a manufacturing method of an array substrate and a display panel and device. The array substrate includes a pixel circuit. The pixel circuit includes a first transistor and a second transistor, the first transistor includes a first active layer, the second transistor includes a second active layer, and the first active layer and the second active layer both include silicon. The array substrate further includes a first-type inorganic layer and a second-type inorganic layer and a first via hole. The first via hole is located above the first active layer and at least penetrates through the second-type inorganic layer. Concentration of hydrogen ions in the first active layer is less than concentration of hydrogen ions in the second active layer.

Display device and method for manufacturing the same

A display device includes: a display panel; and an input sensing unit disposed on the display panel and including an active area and a peripheral area adjacent to the active area; wherein the input sensing unit includes: a first conductive layer disposed on at least the peripheral area; a first insulation layer disposed on the first conductive layer exposing at least a portion of the first conductive layer; a second conductive layer disposed on the first insulation layer and including sensing patterns; and a second insulation layer including an organic material disposed on the second conductive layer.

Display device
11637161 · 2023-04-25 · ·

A display device includes a substrate including a pixel area and a transmission area, and a pixel circuit disposed in the pixel area. The pixel circuit includes a first thin-film transistor included in a first multi-layer film, and a second thin-film transistor included in a second multi-layer film on the first multi-layer film. The first thin-film transistor and the second thin-film transistor are electrically connected to each other. The display device also includes a display element disposed on the second multi-layer film and including a pixel electrode electrically connected to the second thin-film transistor via a contact hole defined in the second multi-layer film, an opposite electrode facing the pixel electrode, and an intermediate layer between the pixel electrode and the opposite electrode.

Display panel and display device having first transistor including first drain electrode and first source electrode made of different materials

A display panel and a display device are provided. The display panel includes a substrate, a driving unit including a first transistor, and at least one light-emitting element. The first transistor includes a first source electrode and a first drain electrode that are located at a side of the at least one light-emitting element close to the substrate. Each of the at least one light-emitting element includes a first electrode, a light-emitting layer, and a second electrode that are sequentially stacked. The first electrode is connected to the first drain electrode through a first via, and the first drain electrode is located at a side of the first source electrode close to the substrate. A material of the first drain electrode is different from a material of the first source electrode.

Display device and method of manufacturing the same

A display device includes: a substrate; a display area in which a plurality of pixels are arranged over the substrate; and a transmission area arranged inside the display area, where the transmission area is provided to overlap a component below the substrate, and a transparent organic layer including siloxane is arranged in the transmission area.

Method of manufacturing display panel utilizing ratio of etching removal speeds and display panel manufactured by the same

A method of manufacturing a display panel includes forming a circuit layer including a gate, a source, and a drain on a base substrate and forming a light emitting element layer on the circuit layer. The forming of the circuit layer includes sequentially forming a preliminary metal layer, a preliminary oxide layer comprising molybdenum and tantalum, and a preliminary capping layer which comprise a preliminary electrode layer, cleaning the preliminary electrode layer, forming a photoresist layer pattern on the preliminary electrode layer, etching the preliminary electrode layer, and removing the photoresist layer pattern. During the etching of the preliminary electrode layer, a ratio between a removal speed ER.sub.1 of the preliminary oxide layer and a removal speed ER.sub.2 of the preliminary metal layer satisfies Equation 1 to maintain a low reflection property
1≤ER.sub.2/ER.sub.1≤3.  [Equation 1]

Display device and manufacturing method thereof

A display device and a manufacturing method thereof are disclosed. The display device includes a base substrate and at least one pixel circuit provided on the base substrate. The pixel circuit includes a driving transistor, a first transistor, and a second transistor; the base substrate includes a semiconductor body that can be doped, and a first conductive layer and a second conductive layer that are on the semiconductor body; the first transistor includes a first doped region in contact with the first electrode of the first transistor, and a second doped region in contact with a second electrode of the first transistor, and the first doped region of the first transistor and the second doped region of the first transistor are spaced apart from each other, have a same doping type, and are both in the semiconductor body.