A display device includes the following elements: a base substrate having an active area and a non-active area; a plurality of pads disposed on the non-active area; and a printed circuit disposed on the plurality of pads. The printed circuit may include the following elements: a support layer; a first conductive layer and a second conductive layer respectively disposed on two opposite surfaces of the support layer. The second conductive layer may include the following elements: a first conductive member; a second conductive member; and a space between the first conductive member and the second conductive member. The first conductive member and the second conductive member may be electrically connected to the first conductive layer through contact holes. A side surface of the base substrate may be positioned between two edges of the space in a direction parallel to the support layer.

Discussed is a display apparatus capable of realizing a high resolution and a small power consumption, and a method for manufacturing the same, wherein the display apparatus includes a bottom gate type first thin film transistor disposed in a display area, and a top gate type second thin film transistor disposed in a non-display area.

A display device and a method of driving a display device are provided. A display device includes a substrate, a first conductive layer on the substrate and including a lower light blocking pattern, a buffer layer on the first conductive layer, a semiconductor layer including a semiconductor pattern on the buffer layer, a gate insulating layer on the semiconductor pattern, a second conductive layer including a gate electrode on the gate insulating layer, a planarization layer on the second conductive layer, and a third conductive layer on the planarization layer and including a first conductive pattern electrically coupling the lower light blocking pattern to the semiconductor pattern, wherein the first conductive pattern is coupled to the lower light blocking pattern through a first contact hole passing through the planarization layer and the buffer layer, and coupled to the semiconductor pattern through a second contact hole passing through the planarization layer.

A light emitting diode display comprises a first panel, which comprises: a first layer having a substrate a second layer having a plurality of pixel circuits disposed on a first surface of the substrate; a plurality of light emitting diodes electrically connected to the pixel circuits; and a driver circuit communicatively coupled to the pixel circuits by at least one electrically conductive via traveling through the first layer; an edge of the panel having a non-emitting space having a length less than a length of a non-emitting space within the panel.

Disclosed are an array substrate and a display panel, including: a base substrate; and a wiring layer and a light-emitting layer which are stacked on the base substrate sequentially, wherein the wiring layer includes a signal wiring, a first wiring and a second wiring, a projection of the first wiring on the base substrate is separated from a projection of the second wiring on the base substrate, the first and second wiring are respectively disposed on two sides of the light-emitting layer below the light-emitting layer, the signal wiring is between the first and second wiring, the projections of the first and second wiring on the base substrate respectively overlap projections of two edges of the light-emitting layer on the base substrate, and a length of the second wiring is less than that of the signal wiring in an extension direction of the signal wiring.

The present invention provides a silicon-based micro display screen and method for manufacturing the same. The method includes following steps: providing a silicon substrate, defining a number of sub-pixel regions on the silicon substrate, and sequentially and respectively preparing an anode layer, an OLED layer, a cathode layer and a first protective layer in each sub-pixel region on the silicon substrate; plasma bombarding and removing the exposed OLED layer; forming a second protective layer on sides of the etched cathode layer, the protective layer and the OLED layer; sequentially performing other sub-pixels; and processing and forming a silicon-based micro-display screen based on the results of the above steps. In present invention, the etching and coating processes are carried out in a vacuum environment to prevent the OLED layer from being invaded by water vapor and oxygen, and prolong the service life of the silicon-based micro display screen.

A flexible display panel and a fabricating method thereof are described. The fabricating method has steps of: providing a substrate comprising a hard state and a soft state; forming a thin-film transistor layer on a side of the substrate in the hard state; forming an organic light-emitting layer on a side of the thin-film transistor layer away from the substrate; forming an encapsulation layer on a side of the organic light-emitting layer away from the thin-film transistor; wherein, after laying of each film layer in the flexible display panel, a photoinitiator layer is formed on a side of the substrate away from the thin-film transistor layer, and the substrate and the photoinitiator layer are irradiated with the preset ultraviolet light to change the substrate from the hard state to the soft state to obtain the flexible display panel. The fabricating method avoids problems caused by using laser lift-off technology.

A display panel, a preparation method, and a display device are disclosed, including an array substrate, an organic light emitting diode (OLED) light emitting device disposed on a side of the array substrate, and a scattering layer disposed on a side of the OLED light emitting device away from the array substrate, wherein the scattering layer has a plurality of micropores.

An organic light-emitting diode (OLED) display substrate, a manufacturing method thereof, and a display device are disclosed. In the OLED display substrate, an anode pattern is located at a side of an insulating layer away from a base substrate and is located in an effective display region; an organic light-emitting layer is located on the anode pattern; a periphery region includes a lead wire region and a virtual region that are at least partly overlapped; a lead wire is located in the lead wire region; the virtual region is provided with a virtual anode pattern, the virtual anode pattern is insulated from the lead wire; the periphery region further includes an annular electrode surrounding the effective display region; a cathode is electrically connected with the annular electrode; the virtual region is located at an outer side of the annular electrode away from the effective display region.

A display apparatus having a connection electrode which crosses a bending area may be provided. The connection electrode may be disposed on a device substrate including a bending area between a display area and a pad area. The connection electrode may connect the display area and the pad area across the bending area. The connection electrode may have a stacked structure of the lower connecting electrode and the upper connecting electrode. A light-emitting device, an encapsulating element and a touch electrode may be sequentially stacked on the display area of the device substrate. The upper connecting electrode may include the same material as the touch electrode. Thus, in the display apparatus, the disconnection of the connection electrode due to bending stress and external impact may be reduced.