Patent classifications
H10K59/1201
OLED DISPLAY PANEL AND METHOD FOR MANUFACTURING THE SAME
An organic light-emitting diode (OLED) display panel and a method for manufacturing the same are provided. The OLED display panel at least includes a thin film transistor (TFT) array substrate, a passivation layer, a planarization layer, and planarization-compensating layer. The planarization layer has a first planarization part corresponding to a light-emitting area, and a second planarization part corresponding to a defining area and a part of the light-emitting area. Height of a surface of the planarization-compensating layer from the surface of the TFT array substrate and height of a surface of the second planarization part from the surface of the TFT array substrate are level.
DISPLAY PANEL, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY APPARATUS
A display panel, a method for manufacturing the same and a display apparatus are provided. In an embodiment, the display panel includes: a substrate, a display layer located on a side of the substrate, and a light-extraction layer located on a side of the display layer opposite to the substrate. In an embodiment, he display layer includes light-emitting elements and a pixel-definition layer located between adjacent light-emitting elements. In an embodiment, he light-extraction layer includes a cushion layer, a first refracting layer and a second refracting layer that are stacked, and the first refracting layer is located between the cushion layer and the second refracting layer.
DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME
A display device includes: a substrate; a plurality of first electrodes positioned on the substrate; a lower partition wall configured to include a plurality of pixel openings that overlap the first electrodes; an outer partition wall positioned on at least a portion of the lower partition wall; an inner partition wall positioned on another portion of the lower partition wall; an emission layer disposed on each of the first electrodes; and a second electrode disposed on the emission layer.
DISPLAY DEVICE AND MANUFACTURING METHOD OF DISPLAY DEVICE
A display device and a manufacturing method of the display device are provided. The display device includes a substrate; a pixel definition layer disposed on the substrate and having a plurality of pixel openings; a surface-active nanolayer disposed on a surface of the substrate and on a surface extending to the pixel definition layer, wherein the surface-active nanolayer covers a plurality of nanoparticles; and a light-emitting layer disposed in the plurality of pixel openings.
MANUFACTURING METHOD OF OLED PANEL AND OLED PANEL
The present application provides a manufacturing method of an organic light-emitting diode (OLED) panel and the OLED panel. Conventional OLED panels have problems like low aperture ratios and low capacitance. The present application overlaps a first conductive layer and a light shielding layer, a pixel electrode is connected to a source, and a planarization layer and a passivation layer in a capacitor area are removed. Therefore, an aperture ratio and capacitance of the OLED panel are greatly improved, the present application has a high degree of design freedom to be used in larger-sized OLED panels, and capacitance retention is improved.
DISPLAY DEVICE
A display device includes: a transistor on a substrate in a display area; at least one monitor pattern on the substrate in a monitor area adjacent to the display area and electrically floating; and an emission layer on the transistor.
ELECTRONIC DEVICE
An electronic device includes a base layer. A pixel definition layer is disposed on the base layer. The pixel definition layer includes a first opening extending therethrough and a second opening extending therethrough. A light emitting element is disposed on the base layer and overlaps the first opening. A light sensing element is disposed on the base layer and overlaps the second opening. The light sensing element comprises a photodiode and a conductive pattern that directly contacts the photodiode. A pixel transistor is connected to the light emitting element. A sensing transistor is connected to the light sensing element. The light sensing element is disposed between a layer that the pixel transistor is disposed and a layer that the light emitting element is disposed.
DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME
A display apparatus includes a pixel electrode, a pixel-defining layer covering edges of the pixel electrode, where an opening is defined through the pixel-defining layer to expose a central portion of the pixel electrode, and a light-condensing layer disposed over the pixel electrode to correspond to the opening. A first first slope angle of a first first side surface of the light-condensing layer with respect to a lower surface of the light-condensing layer is different from a second first slope angle of a second first side surface of the light-condensing layer with respect to the lower surface.
DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
A display device includes: a display panel comprising a light emitting area and a non-light-emitting area; an input sensor on the display panel; and an anti-reflective layer on the input sensor, the input sensor comprising: a sensing electrode on the display panel and having a first opening defined therethrough to correspond to the light emitting area; a first insulating layer between the sensing electrode and the display panel and having a second opening defined therethrough to correspond to the first opening; and a second insulating layer comprising a first portion inside at least the first opening and the second opening, wherein one of the first insulating layer and the second insulating layer comprises an organic material, the other of the first insulating layer and the second insulating layer comprises an inorganic material, and the first opening has a substantially same shape as the second opening in a plan view.
DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME
A display device includes: a substrate; a semiconductor layer on the substrate, and including a channel of at least one transistor; a first insulating layer on the semiconductor layer; and a gate electrode on the first insulating layer. The semiconductor layer includes polycrystalline silicon, and the channel includes: a first region containing a first impurity; and a second region containing a second impurity different from the first impurity.