A pixel includes a pixel circuit and an organic light emitting diode. The pixel circuit has first, second, third, and fourth transistors. The first transistor controls an amount of current flowing from a first driving power supply coupled to a first node to a second driving power supply through the organic light emitting diode. The turns on when a scan signal is supplied to a first scan line. The third transistor turns on when a scan signal is supplied to a second scan line. The fourth transistor turns on when a scan signal is supplied to a third scan line. The first transistor is a p-type Low Temperature Poly-Silicon thin film transistor and the third transistor and the fourth transistor are n-type oxide semiconductor thin film transistors.

Disclosed is a display device, including: a substrate including a pixel area and a peripheral area; pixels provided in the pixel area as a plurality of pixel rows and a plurality of pixel columns; data lines configured to provide a data signal; scan lines configured to provide a scan signal; first power lines configured to provide a power source to the pixel columns; and a second power line connected to the first power lines and disposed in the peripheral area. A scan line connected to an i.sup.th pixel row may apply a scan signal to the i.sup.th pixel row, and a branched line branched from the scan line may apply an initialization signal to a k.sup.th pixel row (k≠i). A branched point of the scan line is disposed between a pixel most adjacent to the second power line of the i.sup.th pixel row and the second power line.

A display module including a substrate having a plurality of pixels, a data line that supplies a data signal to a pixel, a current supply line that supplies electric current to the pixel, a data driving circuit that supplies a data signal to the data line, and a gate driving circuit thereon. The plurality of pixels are arranged in a display area of the substrate, and each of the plurality of pixels includes a light emitting device, a first thin film transistor connected to the data line that supplies the data signal, a second thin film transistor connected to the current supply line, and a capacitor. The light emitting device includes a first electrode layer connected to the second thin film transistor, an organic layer formed on the first electrode layer, and a second electrode layer formed on the organic layer.

It is an object of the present invention to connect a wiring, an electrode, or the like formed with two incompatible films (an ITO film and an aluminum film) without increasing the cross-sectional area of the wiring and to achieve lower power consumption even when the screen size becomes larger. The present invention provides a two-layer structure including an upper layer and a lower layer having a larger width than the upper layer. A first conductive layer is formed with Ti or Mo, and a second conductive layer is formed with aluminum (pure aluminum) having low electric resistance over the first conductive layer. A part of the lower layer projected from the end section of the upper layer is bonded with ITO.

A thin film transistor substrate includes a data line, a gate line, a gate electrode, a source electrode, a first drain electrode, a semiconductor layer and a second drain electrode. The data line and the gate line cross each other on a base substrate. The gate electrode is electrically connected to the gate line. The source electrode is electrically connected to the data line. The first drain electrode and the source electrode face each other. The semiconductor layer serves as a channel between the source electrode and the first drain electrode. The second drain electrode is disposed on the first drain electrode. The second drain electrode is electrically connected to the first drain electrode.

A pixel includes an organic light emitting diode (OLED), a pixel circuit, and first and second transistors. The OLD includes a cathode electrode connected to a second power source. The pixel circuit includes a driving transistor having a gate electrode initialized by a third power source. The driving transistor controls the amount of current flowing from a first power source to the second power source via the OLED. The first transistor is connected between a fourth power source and the second power source and an anode electrode of the OLED. The first transistor is turned on based on a scan signal is supplied to a scan line. The second transistor is connected between a data line and the pixel circuit. The second transistor is turned on when the scan signal is supplied to the ith scan line.

A pixel includes an organic light emitting diode (OLED), a pixel circuit, and first and second transistors. The OLD includes a cathode electrode connected to a second power source. The pixel circuit includes a driving transistor having a gate electrode initialized by a third power source. The driving transistor controls the amount of current flowing from a first power source to the second power source via the OLED. The first transistor is connected between a fourth power source and the second power source and an anode electrode of the OLED. The first transistor is turned on based on a scan signal is supplied to a scan line. The second transistor is connected between a data line and the pixel circuit. The second transistor is turned on when the scan signal is supplied to the ith scan line.

A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

An organic light emitting diode display is disclosed that includes a shield layer on a substrate; a semiconductor layer on the shield layer; a gate insulating layer on the semiconductor layer; a first gate electrode on the gate insulating layer; a first interlayer dielectric layer on the first gate electrode; a second gate electrode and a connection electrode on the first interlayer dielectric layer, the connection electrode electrically connected to the shield layer and passing through the semiconductor layer; a second interlayer dielectric layer on the second gate electrode and the connection electrode; a source electrode and a drain electrode on the second interlayer dielectric layer, the drain electrode electrically connected to the semiconductor layer and the source electrode electrically connected to the connection electrode; an insulating layer on the drain electrode and the source electrode; and a first electrode on the insulating layer and electrically connected to the source electrode.