A semiconductor apparatus includes an element substrate including an effective pixel region having a plurality of effective pixels on one principal surface side of a first substrate, and a peripheral region positioned around the effective pixel region, a second substrate, and a first and a second bonding member configured to bond the both substrates. The second bonding member includes a material different from that of the first bonding member. In a planar view with respect to the one principal surface, the second substrate is disposed within the element substrate. The first bonding member is provided between the peripheral region and the second substrate. The second bonding member is provided between the effective pixel region and the second substrate. In a planar view with respect to the one principal surface, at least a part of an end portion of the second substrate is positioned on the first bonding member.

A display apparatus includes: a substrate having a display area and a peripheral area outside the display area; a first conductive layer on the substrate in the peripheral area and comprising a first hole; a second conductive layer on the first conductive layer and overlapping the first conductive layer, the second conductive layer comprising a second hole; a planarization layer extending from the display area to the peripheral area and comprising at least two organic insulating layers between the first conductive layer and the second conductive layer; and a display element on the planarization layer in the display area, wherein a part of a portion of the second conductive layer except for the second hole is in contact with a part of a portion of the first conductive layer except for the first hole.

A display device includes a substrate having a top surface, a bottom surface, and a first contact hole passing through the top surface and the bottom surface; a thin film transistor disposed above the top surface and including a semiconductor layer; a display element connected to the thin film transistor; a top conductive pattern disposed between the substrate and the thin film transistor and overlapping the semiconductor layer of the thin film transistor; a bottom conductive pattern disposed on the bottom surface and connected to the top conductive pattern through the first contact hole; and a bottom planarization layer disposed on the bottom surface, the bottom planarization layer disposed on the bottom conductive pattern.

A display device includes a substrate having a top surface, a bottom surface, and a first contact hole passing through the top surface and the bottom surface; a thin film transistor disposed above the top surface and including a semiconductor layer; a display element connected to the thin film transistor; a top conductive pattern disposed between the substrate and the thin film transistor and overlapping the semiconductor layer of the thin film transistor; a bottom conductive pattern disposed on the bottom surface and connected to the top conductive pattern through the first contact hole; and a bottom planarization layer disposed on the bottom surface, the bottom planarization layer disposed on the bottom conductive pattern.

Provided are a display panel and a display device. The display panel includes a substrate, a drive module layer, a planarization layer, an anode layer, an organic light-emitting layer, a cathode layer and an auxiliary connection line. The drive module layer, the planarization layer, the anode layer, the organic light-emitting layer and the cathode layer are sequentially disposed on the substrate. The drive module layer is provided with drive modules; and the anode layer includes blocky anodes. On a plane parallel to a plane where the substrate is located, the auxiliary connection line is disposed in a gap region between adjacent two of the blocky anodes and is insulated from the blocky anodes.

An organic light-emitting display apparatus includes: first and second pixel electrodes on a substrate, and spaced from each other; a pixel-defining film surrounding edges of the first and second pixel electrodes; a first intermediate layer on the first pixel electrode; a second intermediate layer on the second pixel electrode, spaced from the first intermediate layer; a first counter electrode on the first intermediate layer; a second counter electrode on the second intermediate layer, spaced from the first counter electrode; a first passivation layer on the first counter electrode; a second passivation layer on the second counter electrode, spaced from the first passivation layer; a first bank around the first passivation layer and protruding from the pixel-defining film to extend in a direction away from the substrate; and a second bank around the second passivation layer and protruding from the pixel-defining film to extend in the direction away from the substrate.

A display apparatus including: a first thin-film transistor and a second thin-film transistor on a substrate, wherein the first thin-film transistor includes a first electrode layer, and the second thin-film transistor includes a second electrode layer; an insulating layer having a first contact hole and a second contact hole respectively exposing the first electrode layer and the second electrode layer; a first pixel electrode connected to the first thin-film transistor through the first contact hole; and a second pixel electrode connected to the second thin-film transistor through the second contact hole. A top surface of the first pixel electrode overlapping the first electrode layer in the first contact hole has a first step facing a first direction, and a top surface of the second pixel electrode overlapping the second electrode layer in the second contact hole has a second step facing a second direction opposite to the first direction.

An active matrix substrate includes a first TFT and a second TFT, in which the first TFT includes a first oxide semiconductor layer and a first gate electrode arranged on a part of the first oxide semiconductor layer with a first gate insulating layer interposed therebetween, the first gate insulating layer has a layered structure including a first insulating film and a second insulating film arranged on the first insulating film, the second TFT includes a second oxide semiconductor layer having a higher mobility than the first oxide semiconductor layer and a second gate electrode arranged on a part of the second oxide semiconductor layer with a second gate insulating layer interposed therebetween, and the second gate insulating layer includes the second insulating film and does not include the first insulating film, and the second TFT further includes a lower insulating layer including the first insulating film arranged between the second oxide semiconductor layer and a substrate.

A flexible display panel and a manufacturing method thereof, and a flexible display apparatus are disclosed. The flexible display panel includes: a flexible substrate, the flexible substrate including a display area, a peripheral area, a welding area and a bending area, and the bending area including a first edge; and the flexible display panel further includes: a barrier and an organic insulation layer, wherein the peripheral area includes a peripheral transition area between the bending area and the display area, the organic insulation layer in the peripheral transition area is provided with a first groove, the first groove is on one side of the barrier and extends along a direction substantially parallel to a bending axis, and the first groove is on one side of the first edge proximal to the display area.

The light-emitting device includes a thin film transistor having a channel layer made of a first n-type semiconductor; a cathode electrically connected to a drain of the thin film transistor and made of a second n-type semiconductor; an anode facing the cathode; and a light-emitting layer provided between the cathode and the anode.