A thin film transistor array panel includes a substrate and a thin film transistor disposed on a surface of the substrate. The thin film transistor includes a semiconductor, a source electrode, and a drain electrode that are disposed on a same layer as one another. The semiconductor is between the source electrode and the drain electrode. The thin film transistor array panel further includes a buffer layer disposed between the semiconductor and the substrate and including an inorganic insulating material. The first edge of the buffer layer is substantially parallel to an adjacent edge of the semiconductor, a second edge of the buffer layer is substantially parallel to an adjacent edge of the source electrode, and a third edge of the buffer layer is substantially parallel to an adjacent edge of the drain electrode.

An electronic device which includes at least one optoelectronic component including a first active layer, a first electrode, and a second interface layer between the first layer and the first electrode; and at least one first field effect transistor including a first semiconductor portion, a first gate, and at least one third layer, between the first gate and the first semiconductor portion. The third layer is made of the same material as the second layer. The electronic device includes a second electrode and a fourth interface layer between the first layer and the second electrode and includes a second field effect transistor that includes a second semiconductor portion, a second gate, and at least one fifth layer between the second gate and the second semiconductor portion. The fifth layer is made of the same material as the fourth layer.

A method of making an OLED device includes providing a first undercut lift-off structure over the device substrate having a first array of bottom electrodes. Next, one or more first organic EL medium layers including at least a first light-emitting layer are deposited over the first undercut lift-off structure and over the first array of bottom electrodes. The first undercut lift-off structure and overlying first organic EL medium layer(s) are removed by treatment with a first lift-off agent comprising a fluorinated solvent to form a first intermediate structure. The process is repeated using a second undercut lift-off structure to deposit one or more second organic EL medium layers over a second array of bottom electrodes. After removal of the second undercut lift-off structure, a common top electrode is provided in electrical contact with the first and second organic EL medium layers.

An organic semiconductor substrate includes a base, a first conductive pattern, a second conductive pattern, a first metal oxide pattern, a second metal oxide pattern, an organic flat pattern layer, a source, a drain, an organic semiconductor pattern, an organic gate insulating layer, and a gate. The first conductive pattern and the second conductive pattern are disposed on the base and separated from each other. The first metal oxide pattern and the second metal oxide pattern respectively cover and are electrically connected to the first conductive pattern and the second conductive pattern, respectively. A first portion of the organic flat pattern layer is disposed between the first metal oxide pattern and the second metal oxide pattern. A surface of the first metal oxide pattern has a first distance from the base. A surface of the first portion of the organic flat pattern layer has a second distance from the base. The second distance is less than or equal to the first distance.

A display panel disclosed in the application includes a display region and a peripheral region. The display panel includes a substrate and at least one dam disposed on the substrate. The dam is in the peripheral region. An anode is disposed on the substrate and is in the peripheral region. A plurality of holes is provided on the anode to expose the dam. In a direction which the display region faces the peripheral region, a size of the holes is greater than a size of the dam.

An organic light-emitting diode display device is provided, which includes a base layer, a device layer, a pixel layer, an encapsulation layer, and a camera, wherein the camera is disposed on a back side of the base layer, and the pixel layer includes an anode layer, a pixel definition layer, and a cathode layer. A nanopore array is provided in a region of the anode layer corresponding to the camera, and the nanopore array is configured to allow external light to be transmitted to the camera through the anode layer to implement camera function of the camera. Selective transmission of light can be achieved by adjusting size of nanopores in the nanopore array, so that the display device positioned above the camera can display a picture normally, which is beneficial to achieving a full-screen display.

A semiconductor device package includes a display device, an electronic module and a conductive adhesion layer. The display device includes a first substrate and a TFT layer. The first substrate has a first surface and a second surface opposite to the first surface. The TFT layer is disposed on the first surface of the first substrate. The electronic module includes a second substrate and an electronic component. The second substrate has a first surface facing the second surface of the first substrate and a second surface opposite to the first surface. The electronic component is disposed on the second surface of the second substrate. The conductive adhesion layer is disposed between the first substrate and the second substrate.

A thin film transistor array panel includes a substrate and a thin film transistor disposed on a surface of the substrate. The thin film transistor includes a semiconductor, a source electrode, and a drain electrode that are disposed on a same layer as one another. The semiconductor is between the source electrode and the drain electrode. The thin film transistor array panel further includes a buffer layer disposed between the semiconductor and the substrate and including an inorganic insulating material. The first edge of the buffer layer is substantially parallel to an adjacent edge of the semiconductor, a second edge of the buffer layer is substantially parallel to an adjacent edge of the source electrode, and a third edge of the buffer layer is substantially parallel to an adjacent edge of the drain electrode.

An organic light-emitting diode display device is provided, which includes a base layer, a device layer, a pixel layer, an encapsulation layer, and a camera, wherein the camera is disposed on a back side of the base layer, and the pixel layer includes an anode layer, a pixel definition layer, and a cathode layer. A nanopore array is provided in a region of the anode layer corresponding to the camera, and the nanopore array is configured to allow external light to be transmitted to the camera through the anode layer to implement camera function of the camera. Selective transmission of light can be achieved by adjusting size of nanopores in the nanopore array, so that the display device positioned above the camera can display a picture normally, which is beneficial to achieving a full-screen display.

A display panel disclosed in the application includes a display region and a peripheral region. The display panel includes a substrate and at least one dam disposed on the substrate. The dam is in the peripheral region. An anode is disposed on the substrate and is in the peripheral region. A plurality of holes is provided on the anode to expose the dam. In a direction which the display region faces the peripheral region, a size of the holes is greater than a size of the dam.