The present disclosure relates to an organic light emitting display device and an organic light emitting display panel including color filters disposed on a substrate and overlapping an emission area, a first insulating layer disposed on the color filters, a first active layer disposed on the first insulating layer, a gate electrode disposed on an upper surface of the first active layer, a second insulating layer disposed on the first active layer and the gate electrode and comprising a hole exposing a portion of the upper surface of the first active layer, a bank disposed on the second insulating layer and comprising an opening overlapping the hole of the second insulating layer, an organic layer disposed on the portion of the upper surface of the first active layer and the bank, and a cathode electrode disposed on the organic layer, thereby providing the organic light emitting display device and the organic light emitting display panel that are capable of simplifying the process.

A thin film transistor array substrate comprises a substrate, a light shielding layer provided on the substrate, and a thin film transistor provided overlapped by the light shielding layer, wherein the thin film transistor includes a semiconductor layer on the light shielding layer, a gate insulating layer on the semiconductor layer, a gate electrode on the gate insulating layer, and a source electrode connected to a first side of the semiconductor layer and a drain electrode connected to a second side of the semiconductor layer, wherein at least one of the light shielding layer, the gate electrode, the source electrode, and the drain electrode includes a first quantum-dot layer.

A thin film transistor array substrate comprises a substrate, a light shielding layer provided on the substrate, and a thin film transistor provided overlapped by the light shielding layer, wherein the thin film transistor includes a semiconductor layer on the light shielding layer, a gate insulating layer on the semiconductor layer, a gate electrode on the gate insulating layer, and a source electrode connected to a first side of the semiconductor layer and a drain electrode connected to a second side of the semiconductor layer, wherein at least one of the light shielding layer, the gate electrode, the source electrode, and the drain electrode includes a first quantum-dot layer.

A display device can include a display area having a first optical area and a normal area, the first optical area including a central area and a bezel area located outside of the central area; a first row of device elements extending across both of the central area and the bezel area; a second row of device elements extending across both of the central area and the bezel area. The display device can further include a first light emitting element located in the central area of the first optical area and in the first row; a first transistor located in the bezel area of the first optical area and in the second row; and a routing structure electrically connecting the first light emitting element located in the central area and in the first row with the first transistor located in the bezel area and in the second row.

A display device can include a display area having a first optical area and a normal area, the first optical area including a central area and a bezel area located outside of the central area; a first row of device elements extending across both of the central area and the bezel area; a second row of device elements extending across both of the central area and the bezel area. The display device can further include a first light emitting element located in the central area of the first optical area and in the first row; a first transistor located in the bezel area of the first optical area and in the second row; and a routing structure electrically connecting the first light emitting element located in the central area and in the first row with the first transistor located in the bezel area and in the second row.

A light emitting display apparatus according to an aspect of the present disclosure may include a first driving transistor and a second driving transistor spaced apart from each other on a substrate, a first anode connected to the first driving transistor and overlapping with the second driving transistor, a second anode connected to the second driving transistor, and a shielding metal between the second driving transistor and the first anode. The second anode may have a smaller area than the first anode, and the shielding metal may reduce a parasitic capacitance associated with the second anode and the first anode.

A gate-in-panel (GIP) display panel and a device are discussed, which are capable of resolving an output deviation between shift clock lines disposed in a bezel area and easily achieving a narrow bezel. The display panel can include an active area configured to display an image, and a bezel area disposed around the active area. Further, a ground area, a clock line area, a GIP circuit area, and a low-voltage line area can be disposed in the bezel area, and the clock line area can be disposed closest to the active area.

A gate-in-panel (GIP) display panel and a device are discussed, which are capable of resolving an output deviation between shift clock lines disposed in a bezel area and easily achieving a narrow bezel. The display panel can include an active area configured to display an image, and a bezel area disposed around the active area. Further, a ground area, a clock line area, a GIP circuit area, and a low-voltage line area can be disposed in the bezel area, and the clock line area can be disposed closest to the active area.

Discussed is a light emitting display device having a slit provided in a source voltage line, whereby it is possible to reduce a foreign matter generation area, prevent light leakage due to the source voltage line, and reduce parasitic capacitance. To this end, the light emitting display device can include a white subpixel and a color subpixel disposed on a substrate so as to be adjacent to each other. Each of the white subpixel and the color subpixel can have an emission portion and a driving circuit. The light emitting display device can further include a source voltage line extending between the white subpixel and the color subpixel and having a slit parallel to the emission portions, a color filter overlapping the emission portion of the color subpixel and the slit, and an anode provided at each subpixel so as not to overlap the slit.

A display device can include a substrate including a display area, a subpixel positioned on the substrate and positioned in the display area, and a black bank positioned on the substrate. The black bank can include a first opening corresponding to an emission area of the subpixel, and quantum dots that absorb light having a wavelength in a visible light region. As a result, the display device can reduce external light reflectance.