A display apparatus includes a first pixel circuit and a second pixel circuit. The first pixel circuit includes a first driving transistor and a first storage capacitor having a first lower storage electrode connected to a gate of the first driving transistor and a first upper storage electrode overlapping the first lower storage electrode. The second pixel circuit includes a second driving transistor and a second storage capacitor including a second lower storage electrode connected to a gate of the second driving transistor and a second upper storage electrode overlapping the second lower storage electrode. A second overlapping area of the second lower storage electrode and the second upper storage electrode is about twice to about four times a first overlapping area of the first lower storage electrode and the first upper storage electrode.

A display apparatus includes a first pixel circuit and a second pixel circuit. The first pixel circuit includes a first driving transistor and a first storage capacitor having a first lower storage electrode connected to a gate of the first driving transistor and a first upper storage electrode overlapping the first lower storage electrode. The second pixel circuit includes a second driving transistor and a second storage capacitor including a second lower storage electrode connected to a gate of the second driving transistor and a second upper storage electrode overlapping the second lower storage electrode. A second overlapping area of the second lower storage electrode and the second upper storage electrode is about twice to about four times a first overlapping area of the first lower storage electrode and the first upper storage electrode.

A display substrate, a method for manufacturing the same and a display device are provided. The display substrate includes a base substrate and a thin film transistor array arranged on the base substrate. Multiple pixels arranged in an array are provided in an effective display region of the display substrate. The effective display region includes an optical element arrangement region and other display regions, and a transmittance of the optical element arrangement region is larger than transmittances of the other display regions. In the optical element arrangement region, an optical element is arranged on a side of the base substrate away from the thin film transistor array, and the optical element emits and receives light that is transmitted through the display substrate.

A display substrate, a method for manufacturing the same and a display device are provided. The display substrate includes a base substrate and a thin film transistor array arranged on the base substrate. Multiple pixels arranged in an array are provided in an effective display region of the display substrate. The effective display region includes an optical element arrangement region and other display regions, and a transmittance of the optical element arrangement region is larger than transmittances of the other display regions. In the optical element arrangement region, an optical element is arranged on a side of the base substrate away from the thin film transistor array, and the optical element emits and receives light that is transmitted through the display substrate.

An electronic device including a first substrate, a semiconductor layer, a second substrate and a color filter is disclosed. The first substrate has a peripheral region. The semiconductor layer is disposed on the first substrate in the peripheral region. The second substrate is opposite to the first substrate. The color filter is disposed between the first substrate and the second substrate and in the peripheral region of the first substrate, and the color filter overlaps the semiconductor layer.

An organic light emitting diode display includes a substrate, an overlap layer on the substrate, a semiconductor layer on the overlap layer, a first gate conductor on the semiconductor layer, a second gate conductor on the first gate conductor, a data conductor on the second gate conductor, a driving transistor on the overlap layer, and an organic light emitting diode connected with the driving transistor. The driving transistor includes, in the semiconductor layer, a first electrode, a second electrode, with a channel therebetween. A gate electrode of the first gate conductor overlaps the channel. The overlap layer overlaps the channel of the driving transistor and at least a portion of the first electrode. A storage line of the second gate conductor receives a driving voltage through a driving voltage line in the data conductor. The overlap layer receives a constant voltage.

An organic light emitting diode display includes a substrate, an overlap layer on the substrate, a semiconductor layer on the overlap layer, a first gate conductor on the semiconductor layer, a second gate conductor on the first gate conductor, a data conductor on the second gate conductor, a driving transistor on the overlap layer, and an organic light emitting diode connected with the driving transistor. The driving transistor includes, in the semiconductor layer, a first electrode, a second electrode, with a channel therebetween. A gate electrode of the first gate conductor overlaps the channel. The overlap layer overlaps the channel of the driving transistor and at least a portion of the first electrode. A storage line of the second gate conductor receives a driving voltage through a driving voltage line in the data conductor. The overlap layer receives a constant voltage.

A display device includes a display region in which a plurality of pixels are arranged two-dimensionally. Each of the plurality of pixels includes a light-emitting layer and an optical member that refracts light from the light-emitting layer. In an orthographic projection of a first optical member included in a first pixel with respect to the light-emitting layer, a position of an apex of the first optical member and a position of a center of the first optical member are separated by a first distance.

The present disclosure provides a thin film transistor (TFT) substrate and a display device, the TFT substrate includes an base substrate and a plurality of pixel units, wherein each of the pixel units includes a TFT on the base substrate, the TFT includes a source drain layer, an active layer, and a gate layer; the TFT substrate further includes a light shielding layer on a side of the source drain layer of the TFT distal to the base substrate, and an orthographic projection of the light shielding layer on the base substrate completely covers an orthographic projection of the active layer of the TFT on the base substrate, and partially covers an orthographic projection of the gate layer of the TFT on the base substrate.

A field-effect transistor includes a substrate, a source electrode, a drain electrode, a gate electrode, a gate-insulating film, and an active layer. The active layer contains an oxide having a transmittance of 70% or more in the wavelength range of 400 to 800 nm. A light-shielding member is provided as a light-shielding structure for the active layer, for example, on the bottom face of the substrate.