A leakage current characteristic of a sensor that includes an Oxide TFT can be improved by a sensor including a plurality of electric lines including row lines and column lines, a photodiode in a pixel, a drain of a first transistor connected to the photodiode in the pixel, a drain of a second transistor connected in series with a source of the first transistor in the pixel, a source of the second transistor being connected to a column line among the plurality of electric lines, and both a gate of the first transistor and a gate of the second transistor being connected to a row line among the plurality of electric lines, wherein a channel material of the first transistor is different from a channel material of the second transistor.

The present disclosure provides a photodiode, a display substrate, and manufacturing methods thereof, and a display device. The method for manufacturing the photodiode includes: forming a semiconductor material layer on a base substrate in a non-display region of a display substrate, the semiconductor material layer including a first contact area, a second contact area, and a semiconductor area sandwiched therebetween; processing the first contact area of the semiconductor material layer to form a first contact electrode; processing portions of the semiconductor material layer and the second contact area away from the base substrate in the semiconductor area, to form a first semiconductor layer and a second semiconductor layer stacked, the second semiconductor layer being located on a side of the first semiconductor layer away from the base substrate; and processing the second semiconductor layer in the second contact area to form a second contact electrode.

Provided are an OLED display panel and an OLED display device. The OLED display panel includes a plurality of pixel regions arranged in an array and non light emitting regions between the plurality of pixel regions. The OLED display panel further includes a plurality of wires, and at least a portion of the wires are curved and arranged to form a plurality of light transmissive regions, and the light transmissive regions are disposed corresponding to the non light emitting regions. Thus, the light transmittance of the OLED display panel is greatly improved, which is advantageous for improving amount of light obtained by the photosensitive members disposed on the side of the substrate of the OLED display panel away from the pixel region.

In some example embodiments, a back side illumination (BSI) image sensor may include a pixel configured to generate electrical signals in response to light incident on a back side of a substrate. In some example embodiments, the pixel includes, a photodiode, a device isolation film adjacent to the photodiode, a dark current suppression layer above the photodiode, a light shield grid above the photodiode and including an opening area of 1 to 15% of an area of the pixel, a light shielding filter layer above the light shield grid, a planarization layer above the light shielding filter layer, a lens above the planarization layer, and/or an anti-reflective film between the photodiode and the lens.

A display apparatus includes a display panel having a front area and a side area, a main body supporting the display panel, an auxiliary member arranged inside the main body, and a semi-transmissive mirror arranged between the auxiliary member and the front area, wherein the side area of the display panel may be arranged inside the main body to face the semi-transmissive mirror. Since an image partially emitted from the display panel may be reflected toward the front area, auxiliary members such as a camera, an illumination sensor, and a proximity sensor may be arranged inside the main body (or below a display) to embody a full screen display, whereby a user's satisfaction may be enhanced and a manufacturing process may be simplified.

The embodiment of the present disclosure provides an array substrate, a display panel and a display device. The array substrate comprises a plurality of self-luminous units and photosensitive units disposed on a base substrate, wherein the photosensitive units are located on a side of the self-luminous units proximate to the base substrate, and each of the self-luminous units is correspondingly provided with the photosensitive unit; the self-luminous unit comprises a first electrode, a light-emitting functional layer and a second electrode disposed sequentially in a direction away from the base substrate; the first electrode comprises a light-transmitting region and a reflective region interconnected with each other; the second electrode is a transparent electrode.

The disclosure provides a display backplane, a method of manufacturing the same, and a display device using the same. The display backplane includes a substrate; a thin film transistor structure layer disposed on one side of the substrate and including thin film transistors, a gate insulating layer, and an interlayer dielectric layer, where an etching rate of the interlayer dielectric layer carried out under an HF atmosphere condition is less than 2 Å/S; and photosensitive devices spaced apart from the thin film transistor structure layer and disposed on one side of the thin film transistor structure layer away from the substrate. The interlayer dielectric layer has a high compactness, and can effectively block H from entering the active layer of the thin film transistor to conductorize the active layer, thus guaranteeing good optical characteristics of the thin film transistor while carrying out optical compensation.

Embodiments of the present disclosure provide a photosensitive assembly, a method for preparing the same, an array substrate, and a display device. The photosensitive assembly includes a substrate, a thin-film transistor and a photosensitive unit on a surface of the substrate, and an insulating layer between an active layer of the thin-film transistor and the photosensitive unit. The photosensitive unit includes a first electrode, a photosensitive layer, and a second electrode sequentially arranged on the substrate. The drain electrode of the thin-film transistor is electrically connected to the first electrode, the active layer is located on a surface of the insulating layer away from the substrate, and the photosensitive unit is located on a surface of the insulating layer proximate to the substrate.

An electronic device having a display and a sensor and methods for operating the same are provided. The electronic device includes a housing, a display disposed on a surface of the housing, a sensor mounted under the display inside the housing to detect light received through the display, and a processor electrically connected with the display and the sensor, wherein the processor is configured to determine an illuminance of an outside of the housing using detection data obtained by the sensor while the display displays an image and relevant information between the display and the sensor.

A light emitting display device includes a substrate having a first pixel, a second pixel, a third pixel, and an infrared emission portion. The first, second, and third pixels emit light of different colors. The light emitting device also includes a first electrode on the substrate, a second electrode overlapping the first electrode, an emission layer between the first electrode and the second electrode, and an auxiliary layer between the first electrode and the emission layer. The auxiliary layer includes a first auxiliary layer on the first pixel and a second auxiliary layer in the infrared emission portion. The first auxiliary layer and second auxiliary layer include a same material.