A display device includes a first area in which a foreign substance is disposed and a second area in which the foreign substance is not disposed. The display device includes a lower panel including a base layer, a display element layer, and an encapsulation layer, an upper panel disposed on the lower panel and including a light control layer and a color filter layer, and a filling layer filling a space between the lower panel and the upper panel. A distance between the display element layer and the light control layer in the first area is greater than a distance between the display element layer and the light control layer in the second area. Accordingly, defects caused by the foreign substance are prevented, and a display quality and a reliability of the display device are increased.

A display device in which a pixel defect is less likely to be perceived is provided. The display device includes a display portion where pixels are arranged in a matrix, and a sensor portion including a photoelectric conversion element. First, the display portion is divided into a first region and a second region. Next, first light is emitted from the pixel included in the first region, and the luminance of the first light is detected by the photoelectric conversion element. Moreover, second light is emitted from the pixel included in the second region, and the luminance of the second light is detected by the photoelectric conversion element. Then, the luminance of the first light is compared to the luminance of the second light, and on the basis of the comparison result, one of the first region and the second region is divided into a third region and a fourth region. By repeating these operations, a defective pixel is detected. Luminance represented by image data can be corrected on the basis of the detection result of the defective pixel.

The disclosure provides a display backplane, a method of manufacturing the same, and a display device using the same. The display backplane includes a substrate; a thin film transistor structure layer disposed on one side of the substrate and including thin film transistors, a gate insulating layer, and an interlayer dielectric layer, where an etching rate of the interlayer dielectric layer carried out under an HF atmosphere condition is less than 2 Å/S; and photosensitive devices spaced apart from the thin film transistor structure layer and disposed on one side of the thin film transistor structure layer away from the substrate. The interlayer dielectric layer has a high compactness, and can effectively block H from entering the active layer of the thin film transistor to conductorize the active layer, thus guaranteeing good optical characteristics of the thin film transistor while carrying out optical compensation.

A semiconductor device with a high driving speed is provided. The semiconductor device includes first to fourth cells, a converter circuit, and first to fourth wirings. The first and second cells make a first current and a second current each corresponding to the product of first data and second data flow in the first wiring and the second wiring, respectively. The third and fourth cells make base currents in the same amount flow in the first and second wirings. The converter circuit outputs, from an output terminal thereof, a voltage corresponding to the differential current between the sum of the first current and the base current flowing in the first wiring and the sum of the second current and the base current flowing in the second wiring.

A display apparatus includes a display panel having a front area and a side area, a main body supporting the display panel, an auxiliary member arranged inside the main body, and a semi-transmissive mirror arranged between the auxiliary member and the front area, wherein the side area of the display panel may be arranged inside the main body to face the semi-transmissive mirror. Since an image partially emitted from the display panel may be reflected toward the front area, auxiliary members such as a camera, an illumination sensor, and a proximity sensor may be arranged inside the main body (or below a display) to embody a full screen display, whereby a user's satisfaction may be enhanced and a manufacturing process may be simplified.

A device including: a transfer substrate including electric connection elements; and a plurality of elementary chips bonded and electrically connected to the transfer substrate, each elementary chip including at least one photodetector and an electronic circuit for reading from the at least one photodetector, the device further including, associated with at least one elementary chip, an emission, capture, or actuation element external to the elementary chip, bonded and electrically connected to the transfer substrate, each elementary chip including an electronic circuit for controlling the emission, capture, or actuation element associated with the chip.

Provided is a display device comprising a display panel including a plurality of pixels, one of the pixels includes a light emitting device, which is connected with a reference node to emit light, and a driving transistor connected between a power line, which is to receive a power supply voltage, and the reference node. a scan transistor, which is connected between a data line to receive a data signal and the driving transistor and receives a scan signal, a light receiving device, which is connected between a bias line to receive a bias voltage and the reference node, and receives the light, and a masking transistor which is connected between the reference node and the light receiving device and receives a masking signal.

A display device includes a first base layer, a circuit layer disposed on the first base layer and including a plurality of switching elements, a pixel layer disposed on the circuit layer and including a light emitting element, wherein the light emitting element is configured to receive a current from at least one of the plurality of switching elements to emit a first light, and a sensor layer disposed below the first base layer and including a sensor, wherein the sensor is configured to receive a second light generated when the first light is reflected by an external object.

Provided is a display substrate, including: a substrate, and multiple light-emitting units and multiple light-detecting units located on a substrate. At least one light-emitting unit includes a light-emitting element and a pixel driving circuit coupled with the light-emitting element, and at least one light-detecting unit includes an optical sensing element and a light-emitting detection circuit coupled with an optical sensing element; an optical sensing element is located on one side of a light-emitting detection circuit and a pixel driving circuit away from a substrate and between a light-emitting element and a substrate; the light-emitting element emits light from a side away from the substrate, and a light transmittance region is provided on one side of the light-emitting element facing the optical sensing element.

A light-emitting device including a first substrate, a first active element, a barrier layer, a first photosensitive element, a flat layer, and a first light-emitting diode is provided. The first active element is on the first substrate. The barrier layer is on the first active element. The first photosensitive element is on the barrier layer. The flat layer is on the first photosensitive element, and the first photosensitive element is between the barrier layer and the flat layer. The first light-emitting diode is on the flat layer. The first light-emitting diode includes a first electrode, a light-emitting layer, and a second electrode. The first electrode is electrically connected to the first active element. The first photosensitive element is not completely shielded by the first electrode in a normal direction of the first substrate. The light-emitting layer is on the first electrode. The second electrode is on the light-emitting layer.