A composition for forming an organic semiconductor film includes an organic semiconductor represented by the following Formula A-1, and a solvent having a boiling point of from 150° C. to 300° C. and an SP value of from 15.0 to 18.0.

##STR00001##

The present disclosure relates to a method of printing multi-nanoparticles using evaporation dynamics and surface energy control, the method includes: a step S1 of forming a pattern on a surface of a substrate by irradiating ultraviolet rays to a portion of the surface through a photomask; a step S2 of coating the substrate with a solution containing nanoparticles; and a step S3 of lowering surface energy of the coated nanoparticles.

The present disclosure relates to a method of printing multi-nanoparticles using evaporation dynamics and surface energy control, the method includes: a step S1 of forming a pattern on a surface of a substrate by irradiating ultraviolet rays to a portion of the surface through a photomask; a step S2 of coating the substrate with a solution containing nanoparticles; and a step S3 of lowering surface energy of the coated nanoparticles.

The present invention relates to polymers comprising one or more (repeating) unit(s) of the formula (I), and compounds of formula (III), wherein Y, Y.sup.15, Y.sup.16 and Y.sup.17 are independently of each other a group of formula and their use as IR absorber, organic semiconductor in organic devices, especially in organic photovoltaics and photodiodes, or in a device containing a diode and/or an organic field effect transistor. The polymers and compounds according to the invention can have excellent solubility in organic solvents and excellent film-forming properties. In addition, high efficiency of energy conversion, excellent field-effect mobility, good on/off current ratios and/or excellent stability can be observed, when the polymers and compounds according to the invention are used in organic field effect transistors, organic photovoltaics and photodiodes. ##STR00001##

The present invention relates to a charge transporting semi-conducting material. The charge transporting semi-conducting material may include optionally at least one electrical dopant, and a branched or cross-linked charge transporting polymer that includes 1,2,3-triazole cross-linking units of at least one of the general formulae Ia and/or Ib herein.

The charge transporting polymer can include ethylene building units substituted with at least one pending side group including a conjugated system of delocalised electrons. Also provided herein are processes for obtaining the charge transporting semi-conducting material.

A method of fabricating a carbon nanotube based device, including forming a trench having a bottom surface and sidewalls on a substrate, selectively depositing a bi-functional compound having two reactive moieties in the trench, wherein a first of the two reactive moieties selectively binds to the bottom surface, converting a second of the two reactive moieties to a diazonium salt; and reacting the diazonium salt with a dispersion of carbon nanotubes to form a carbon nanotube layer bound to the bottom surface of the trench.

A method of manufacturing a white organic light-emitting device (white OLED) including a first electrode, a hole transport layer, a white light-emitting layer, an electron transport layer, and a second electrode which are sequentially formed on a substrate, the method including manufacturing a red ink by mixing a red light-emitting host and a red light-emitting dopant, manufacturing a green ink by mixing a green light-emitting host and a green light-emitting dopant, manufacturing a blue ink by mixing a blue light-emitting host and a blue light-emitting dopant, and forming a white light-emitting layer as a monolayer on the hole transport layer by separately electrospraying the red ink, the green ink, and the blue ink on the hole transport layer, wherein the white light-emitting layer includes a plurality of red light-emitting domains, a plurality of green light-emitting domains, and a plurality of blue light-emitting domains on the hole transport layer.

The present invention relates to binuclear metal complexes and electronic devices, in particular organic electroluminescent devices containing said metal complexes. ##STR00001##

The present invention is directed to process for preparing a device comprising a first layer and a first electrode, the method comprising forming the first layer over a first electrode by applying a liquid anhydrous composition comprising at least one metal oxo alkoxide and at least one solvent, onto a surface, the surface being selected from the surface of the first electrode or the surface of a layer being located over the first electrode, optionally drying the composition, and converting the composition to a metal oxide-containing first layer, and forming a second electrode over the first device layer, wherein the method further includes forming a layer comprising quantum dots over the first electrode before or after the formation of the first layer and to the device itself.

Provided are a process for preparing a crystalline organic semiconductor material wherein the conditions of crystallization lead to the formation of crystals at the gas liquid interface having advantageous semiconductor properties, the obtained crystalline organic semiconductor material and the use thereof for the production of organic semiconductor devices, in particular organic field effect transistors and organic solar cells.