The present invention concerns a water-processable n-type semiconductor comprised of polyvinylpyrrolidone (PVP), carbon nanotubes (CNTs) and poly(ethyleneimine) (PEI). The semiconductors are prepared by providing PVP and CNTs in a hydrophilic slurry and dispersing therein small amounts of PEI.

To provide a film-forming ink and a film formation method, capable of making the dimensional accuracy of a film to be formed excellent by increasing the apparent liquid droplet amount of a film-forming ink to be supplied as a liquid droplet into an opening part included in a partition wall, and also to provide a device with a film and an electronic apparatus, each of which has a film formed using the film formation method. A film-forming ink of the invention includes a film-forming material and a liquid medium in which the film-forming material is dissolved or dispersed, wherein the liquid medium contains a first component which has a boiling point at an atmospheric pressure of 200° C. or higher and a second component which has a boiling point at an atmospheric pressure lower than the first component.

A method is described for applying an organic semiconductor layer based on epindolidione to a carrier. In order to provide advantageous production conditions it is proposed that the epindolidione is first reacted with tert-butyloxycarbonyl as protective group to give tert-butyloxycarbonyl epindolidione and then dissolved in a solvent before the dissolved tert-butyloxycarbonyl epindolidione is applied to the carrier, and that the solvent then be evaporated and the tert-butyloxycarbonyl protective group be detached again.

A light emitting device including a first electrode and a second electrode, and an emission layer disposed between the first electrode and the second electrode and including quantum dots, a first charge auxiliary layer disposed between the emission layer and the first electrode, and a second charge auxiliary layer disposed between the emission layer and the second electrode, wherein the emission layer comprises a first emission layer contacting the first charge auxiliary layer, a second emission layer disposed on the first emission layer, and a third emission layer disposed on the second emission layer. The hole mobility of the first emission layer decreases sequentially from the first emission layer to the third emission layer.

A semiconductor composition for producing a semiconducting layer with consistently high mobility is disclosed. The semiconductor composition includes a diketopyrrolopyrrole-thiophene copolymer and an aromatic non-halogenated hydrocarbon solvent. The copolymer has a structure disclosed within. The aromatic non-halogenated aromatic hydrocarbon solvent contains sidechains having at least 2 carbon atoms and the aromatic ring contains at least 3 hydrogen atoms.

The invention relates to a phthalocyanine compound, which has a structure as represented by Formula I, wherein A represents a transition metal or a rare earth metal; R1 represents a phenyl group, a naphthyl group, or a C.sub.4-C.sub.16 n-alkyl group. The aromatic phthalocyanine compound having the structure of Formula I provided in the invention contains a transition metal or a rare earth metal, and introduces a peripheral substituent into a linearly extended 7c-conjugated system. It is relatively stabler at 400° C. or less and will be easily evaporated in vacuum to form a uniform thin film, and has good thermal stability, high chemical stability, and high mobility. The organic semiconductor device has the features of relatively fast on-off speed, relatively high on-off ratio, and strong reliability.

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A photoelectric conversion element including: a first electrode having a photosensitive layer including a light absorber on a conductive support; a second electrode facing the first electrode; and a hole transport layer provided between the first and the second electrodes, in which the light absorber includes a compound having a perovskite-type crystal structure having a cation of Group 1 element of the periodic table or a cationic organic group A, a cation of a metallic atom M that is not Group 1 element of the periodic table, and an anion of an anionic atom X, and an organic solvent content per cubic millimeter of the hole transport layer is 1×10.sup.−10 to 1×10.sup.−7 mol, a solar cell using this photoelectric conversion element, and a method for manufacturing a photoelectric conversion element including a step of applying a hole-transporting material solution and drying the solution at 40° C. to 180° C.

A method of making a perovskite layer includes providing a flexible substrate; providing a perovskite solution comprising an initial amount of solvent and perovskite precursor materials and a total solids concentration between 30 percent and 70 percent by weight of its saturation concentration; depositing the perovskite solution on the substrate; removing a first portion of the solvent from the deposited perovskite solution and increasing the total solids concentration of the perovskite solution to at least 75 percent of its saturation concentration with a first drying step; and removing a second portion of the solvent from the deposited perovskite solution with a second drying step having a higher rate of solvent evaporation that causes saturation and a conversion reaction in the deposited perovskite solution resulting in perovskite crystal formation or formation of a perovskite intermediate phase, wherein the first drying step dwell time is at least 5 times longer than the second drying step dwell time. A continuous inline method for production of photovoltaic devices at high speed, and a perovskite solution for use in making a uniform Perovskite layer at high speed to enable low cost production of high efficiency Perovskite devices are also described.

A perovskite organic light-emitting diode and a preparing method thereof are provided. The perovskite organic light-emitting diode comprises an anode layer, a hole transport layer, a light-emitting layer, an electron transport layer and a cathode layer. The hole transport layer, the light-emitting layer and the electron transport layer are prepared by solution processing. Every film layer is prepared by solution spin coating and dried, thereby the whole preparing process is simple, material utilization rate is high and luminous performance of the device is excellent.

The present invention provides a hole transport material, a preparation method thereof, and an electroluminescent device. Through ingenious molecular design, a xanthracene structure is combined with different electron-donating groups to synthesize a series of hole transport materials with a suitable highest occupied molecular orbital (HOMO) energy level and a suitable lowest unoccupied molecular orbital (LUMO) energy level, and a series of high-performance display devices can be manufactured using the hole transport materials provided by the present invention.