A light-emitting device and a manufacturing method thereof are disclosed. The manufacturing method of the light-emitting device includes: forming a function layer that has a first surface; performing plasma treatment on the first surface of the function layer; and forming a perovskite-type light-emitting layer on the first surface treated by the plasma treatment.

Organic light-emitting diodes are disclosed comprising an electron transport layer and a hole transport layer. At least one of the transport layers is formed by (a) dissolving tubulin or microtubules in a mixture of water and a solvent that changes the surface charge of tubulin, wherein the percentage of solvent in the mixture is selected so that the tubulin acquires a desired surface charge, and (b) using the tubulin with the desired surface charge to fabricate the at least one of the transport layers. Advantageously, the solvent may be DMSO. Methods of fabricating such organic light emitting diodes are also disclosed.

A light-emitting device includes an anode, cathode, and a combined charge transport and emissive layer (CCTEL) disposed on a deposition surface between the anode and cathode. The CCTEL includes a crosslinked charge transport material and quantum dots, the quantum dots distributed unevenly within the crosslinked charge transport material and arranged relative to the deposition layer. The quantum dots include nucleophilic or electrophilic centers and ligands respectively bonded to the quantum dots. The deposition surface has nucleophilic or electrophilic properties. A method of forming the CCTEL includes the steps of depositing a mixture on a deposition surface having nucleophilic or electrophilic properties. The mixture includes a solvent, cross-linkable charge transport material, and quantum dots comprising nucleophilic or electrophilic centers and ligands respectively bonded to the quantum dots. At least a portion of the mixture to an activation stimulus to crosslink the cross-linkable material.

The invention relates to a process for producing a multi-junction device comprising a layer of a crystalline A/M/X material, which crystalline A/M/X material comprises a compound of formula [A].sub.a[M].sub.b[X].sub.c, wherein: [A] comprises one or more A cations; [M] comprises one or more M cations which are metal or metalloid cations; [X] comprises one or more X anions; a is a number from 1 to 6; b is a number from 1 to 6; and c is a number from 1 to 18; and wherein the process comprises forming the layer of the crystalline A/M/X material by disposing a film-forming solution on a substrate, wherein the film-forming solution comprises: (a) one or more M cations; and (b) a solvent; wherein the solvent comprises (i) an aprotic solvent; and (ii) an organic amine, and wherein the substrate comprises: a photoactive region comprising a photoactive material, and a charge recombination layer which is disposed on the photoactive region by solution-deposition. Multi junction devices are also the subject of the present invention.

A compound of formula (I): EAG-EDG-EAG (I) wherein EDG is an electron-donating group comprising a polycyclic heteroaromatic group and each EAG is an electron-accepting group of formula (II): (II) wherein R.sup.10 in each occurrence is H or a substituent; ---- is a bond to EDG; and each X.sup.1-X.sup.4 is independently CR.sup.11 or N wherein R.sup.11 in each occurrence is H or a substituent, with the proviso that at least one occurrence of at least one of X.sup.1-X.sup.4 is N. The compound may be used as an acceptor in a bulk heterojunction layer of an organic photodetector.

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Provided is a display device containing quantum dots. A display device includes a display area. The display area has a light emitting device in which a first electrode, a layer between the first electrode and an emitting layer, the emitting layer, a layer between the emitting layer and a second electrode, and the second electrode are stacked in this order on a substrate. The emitting layer is formed of an inorganic layer containing quantum dots, and the light emitting device is a top emission device. A thin film transistor connected to the light emitting device is preferably an n-ch TFT.

Provided are a core-shell structured perovskite particle light-emitter, a method of preparing the same, and a light emitting device using the same. The core-shell structured perovskite particle light-emitter or metal halide perovskite particle light-emitter has a perovskite nanocrystal structure and a core-shell structured particle structure. Therefore, in the perovskite particle light-emitter of the present invention, as a shell is formed of a substance having a wider band gap than that of a core, excitons may be more dominantly confined in the core, and durability of the nanocrystal may be improved to prevent exposure of the core perovskite to the air using a perovskite or inorganic semiconductor, which is stable in the air, or a polymer.

A method of fabricating a carbon nanotube based device, including forming a trench having a bottom surface and sidewalls on a substrate, selectively depositing a bi-functional compound having two reactive moieties in the trench, wherein a first of the two reactive moieties selectively binds to the bottom surface, converting a second of the two reactive moieties to a diazonium salt; and reacting the diazonium salt with a dispersion of carbon nanotubes to form a carbon nanotube layer bound to the bottom surface of the trench.

Provided herein is a sequentially processed fabrication method involving donor-acceptor conjugated polymers with temperature dependent aggregation (TDA) useful for the preparation of organic semiconductors with improved properties.

A method of forming lead halide perovskite crystals in a solvent. The perovskite is form by solution processing of an organic and inorganic precursor in a polar protic solvent.