The present disclosure discloses metal oxide nanoparticle ink, a method of preparing the same, a metal oxide nanoparticle thin film manufactured using the same, and a photoelectric device using the same. The method of preparing metal oxide nanoparticle ink according to an embodiment of the present disclosure includes a step of, using a ligand solution including a metal oxide and an organic ligand, synthesizing a first nanoparticle that is a metal oxide nanoparticle surrounded with the organic ligand; a step of preparing a dispersion solution by dispersing the first nanoparticle in a solvent; a step of preparing a second nanoparticle by mixing the dispersion solution and a pH-adjusted alcohol solvent and then performing ultrasonication treatment to remove the organic ligand surrounding the first nanoparticle; and a step of preparing metal oxide nanoparticle ink by dispersing the second nanoparticle in a dispersion solvent.

The present disclosure discloses metal oxide nanoparticle ink, a method of preparing the same, a metal oxide nanoparticle thin film manufactured using the same, and a photoelectric device using the same. The method of preparing metal oxide nanoparticle ink according to an embodiment of the present disclosure includes a step of, using a ligand solution including a metal oxide and an organic ligand, synthesizing a first nanoparticle that is a metal oxide nanoparticle surrounded with the organic ligand; a step of preparing a dispersion solution by dispersing the first nanoparticle in a solvent; a step of preparing a second nanoparticle by mixing the dispersion solution and a pH-adjusted alcohol solvent and then performing ultrasonication treatment to remove the organic ligand surrounding the first nanoparticle; and a step of preparing metal oxide nanoparticle ink by dispersing the second nanoparticle in a dispersion solvent.

The present disclosure describes solution methods for manufacturing perovskite halide films for use in solar cells. The methods include the use of additives that facilitate the formation of transitory, intermediate films that are later transformed into the final target perovskite halide films, such that the final films provide improved physical characteristics and operational performance.

Disclosed are an organic semiconductor thin film, a manufacturing method thereof, and a thin film transistor and an electronic device including the organic semiconductor thin film. The organic semiconductor thin film includes a matrix. The matrix includes an elastomer and nanoconfined polymer structures embedded in the matrix. The nanoconfined polymer structures form a polymer network. The nanoconfined polymer structures include a conjugation semiconductor polymer. The conjugation semiconductor polymer includes a repeating unit having at least one conjugation system in its main chain. The nanoconfined polymer structures are present in an upper surface layer and a lower surface layer of the organic semiconductor thin film respectively.

Active emissive layers (e.g., of a light-emitting electrochemical cell (LEC)) are provided and can comprise zero-dimensional (0D) perovskite material in combination with a three-dimensional (3D) perovskite material, as well as electroluminescent devices (e.g., LECs) utilizing such active emissive layers and methods of fabricating and using such active emissive layers and electroluminescent devices. The 0D perovskite material can be incorporated into a matrix film of the 3D perovskite material. The 0D perovskite material can be, for example, perovskite nanocrystals (PNCs). The 0D perovskite material can be, for example, Cs.sub.4PbBr.sub.6, and the 3D perovskite material can be, for example, CsPbBr.sub.3.

Active emissive layers (e.g., of a light-emitting electrochemical cell (LEC)) are provided and can comprise zero-dimensional (0D) perovskite material in combination with a three-dimensional (3D) perovskite material, as well as electroluminescent devices (e.g., LECs) utilizing such active emissive layers and methods of fabricating and using such active emissive layers and electroluminescent devices. The 0D perovskite material can be incorporated into a matrix film of the 3D perovskite material. The 0D perovskite material can be, for example, perovskite nanocrystals (PNCs). The 0D perovskite material can be, for example, Cs.sub.4PbBr.sub.6, and the 3D perovskite material can be, for example, CsPbBr.sub.3.

A method including depositing a lead halide precursor ink onto a substrate; drying the lead halide precursor ink to form a first thin film; annealing the first thin film; and forming a perovskite material layer, wherein forming the perovskite material layer includes: depositing a benzylammonium halide precursor ink onto the first thin film; drying the benzylammonium halide precursor ink; depositing a formamidinium halide precursor ink onto the benzylammonium halide precursor ink; drying the formamidinium halide precursor ink to form a second thin film; and annealing the second thin film.

A method for producing an organic non-fullerene electron transport compound includes mixing naphthalene-1,4,5,8-tetracarboxylic dianhydride and an amine compound in dimethylformamide. The method also includes heating the mixture to a temperature greater than or equal to 70° and less than or equal to 160° C. for an amount of time greater than or equal to 1 hour and less than or equal to 24 hours. The method further includes isolating an organic non-fullerene electron transport compound reaction product.

The invention relates to a formulation comprising p-type and n-type organic semiconductors (OSC) and one or more organic solvents, its use for the preparation of organic electronic (OE) devices, especially for bulk heterojunction (BHJ) organic photovoltaic (OPV) devices, to a process for preparing an OE device, especially a BHJ OPV device, using the formulation, and an OE device, especially a BHJ OPV device, prepared using such a process or formulation.

The present invention relates to a semiconductor composition comprising an inorganic semiconducting material and an organic binder. The present invention further relates to an electronic device comprising a semiconducting layer consisting of such semiconductor composition.