A method of fabricating microstructures of polar elastomers includes coating a substrate with a dielectric material including a polar elastomer, coating the dielectric material with a photoresist, exposing the photoresist to ultraviolet (UV) light through a photomask to define a pattern on the photoresist, developing the photoresist to form the pattern on the photoresist, etching the dielectric material to transfer the pattern from the photoresist to the dielectric material, and removing the photoresist from the patterned dielectric material

Provided are a display device and a method of manufacturing the same. The display device includes a substrate; a pixel electrode on the substrate; a pixel-defining layer having a first opening exposing a central portion of the pixel electrode and a barrier portion defining the first opening; an auxiliary electrode on the barrier portion; an intermediate layer on the pixel electrode; and an opposite electrode on the intermediate layer and in electrical contact with the auxiliary electrode.

Alight-emitting element includes an anode electrode, a cathode electrode, a light-emitting layer, a positive hole transport layer, and an electron transport layer. The light-emitting layer, the positive hole transport layer, and the electron transport layer are provided between the anode electrode and the cathode electrode. The light-emitting layer includes QD phosphor particles, a positive hole transport substance configured to transport positive holes transported thereto by the positive hole transport layer, an electron transport substance configured to transport electrons transported thereto by the electron transport layer, and a photosensitive host material.

Provided are a display panel, a plasma etching method and a system. After patterning a metal film layer on a substrate with a chlorine-containing gas, a post-treatment for suppressing corrosion is implemented by using plasma containing an oxygen-containing gas and a hydrogen-fluoride-containing gas. Thus, the surface of the metal film layer is an aluminum ion-containing crystal, which solves the technical problem of corrosion of the aluminum layer in the plasma etching technology of the prior art.

A transparent display device including a base substrate, a plurality of pixels disposed on the base substrate, each pixel having an emission area and a transmission area transparent to external light, a circuit element layer disposed on the base substrate, a first electrode disposed on the circuit element layer and corresponding to the emission area, a pixel define layer disposed on the circuit element layer, the pixel define layer including a first sidewall defining the emission area and a second sidewall defining the transmission area, an emission layer disposed on the first electrode and corresponding to the emission area, and a second electrode disposed on the emission layer and including an opening that corresponds to the transmission area, in which the first sidewall is inclined at a first angle, and the second sidewall is inclined at a second angle greater than the first angle.

In one embodiment, an electronic display includes a first plurality of hexagon-shaped pixels and a second plurality of hexagon-shaped pixels that are coplanar with the first plurality of hexagon-shaped pixels. The first plurality of hexagon-shaped pixels each include an infrared (IR) emitter subpixel that is operable to emit IR light. The second plurality of hexagon-shaped pixels each include an IR detector subpixel that is operable to detect IR light. Each IR emitter subpixel and each IR detector subpixel includes an anode layer and a cathode layer. Each particular IR emitter subpixel includes an IR emissive layer located between the anode layer and the cathode layer of the particular IR emitter subpixel. Each particular IR detector subpixel includes an IR detector layer located between the anode layer and the cathode layer of the particular IR detector subpixel.

Patterning electronic devices using reactive-ion etching of tin oxides is provided. Reactive-ion etching facilitates patterning of tin oxides, such as barium stannate (BaSnO.sub.3), at a consistent and controllable etch rate. The reactive-ion etching approach described herein facilitates photolithographic patterning of tin oxide-based semiconductors to produce electronic devices, such as thin-film transistors (TFTs). This approach further patterns a tin oxide-based semiconductor without adversely affecting its electrical properties (e.g., resistivity, electron or hole mobility), as well as maintaining surface roughness. This approach can be used to produce optically transparent devices with high drain current (I.sub.D, drain-to-source current per channel width) and high on-off ratio.

Methods for producing and integrating single-walled carbon nanotubes (SWCNT) into existing TFT backplane manufacturing lines are provided. In contrast to LTPS and oxide TFT backplanes, SWCNT TFT backplanes exhibit either equivalent or better figures of merit such as high field emission mobility, low temperature fabrication, good stability, uniformity, scalability, flexibility, transparency, mechanical deformability, low voltage and low power, bendability and low cost. Methods and processes for integrating SWCNTs technologies into existing TFT backplane manufacturing lines, pilot test and mass production can start without additional capex needs are also provided.

In some embodiments, the present disclosure relates to a display device that includes an isolation structure disposed over a reflector electrode, a transparent electrode disposed over the isolation structure, an optical emitter structure disposed over the transparent electrode, and a via structure. The via structure extends from the transparent electrode at a top surface of the isolation structure to a top surface of the reflector electrode. The via structure includes a center horizontal segment that contacts the top surface of the reflector electrode, a sidewall vertical segment that contacts an inner sidewall of the isolation structure, and an upper horizontal segment that is connected to the center horizontal segment by the sidewall vertical segment. The upper horizontal segment is thicker than the center horizontal segment.

A display substrate includes a base, and a gate metal layer, a source-drain metal layer, and a planarization layer that are all disposed above the base. The planarization layer is disposed at a side of the gate metal layer away from the base, and the source-drain metal layer is disposed between the gate metal layer and the planarization layer. The gate metal layer includes gate electrodes, and the source-drain metal layer includes source electrodes and drain electrodes. One of the gate electrodes, a respective one of the source electrodes, and a respective one of the drain electrodes are used to form a thin film transistor. The display substrate further includes auxiliary patterns disposed on surfaces of the source electrodes and the drain electrodes facing away from the base, the auxiliary patterns are in contact with the planarization layer, and a material of the auxiliary patterns includes at least one oleophobic material.