The invention relates to novel compounds containing one or more units derived from 2,6-disubstituted-[1,5]naphthyridine or 1,6-disubstituted-1H-[1,5]naphthyridine-2-one, to methods for their preparation and educts or intermediates used therein, to mixtures and formulations containing them, to the use of the compounds, mixtures and formulations as organic semiconductors in organic electronic (OE) devices, especially in organic photovoltaic (OPV) devices and organic photodetectors (OPD), and to OE, OPV and OPD devices comprising these compounds, mixtures or formulations.

An organic optoelectronic device comprises an active layer comprising a conjugated polymer material which comprises a structure of Formula I:

##STR00001##

wherein

##STR00002##

, and X.sup.1 and X.sup.2 are independently selected from the groups consisting of: N, CH and -CR.sup.1. A.sup.2 and A.sup.3 are the same or different electron-withdrawing groups, and A.sup.2 and A.sup.3 are not simultaneously the same as A.sup.1. D.sup.1, D.sup.2 and D.sup.3 are electron-donating group. sp.sup.1 to sp.sup.6 are independently selected from aromatic ring and heterocyclic ring. a, b and c are real numbers, and 0 < a ≦1, 0 ≦b ≦1, 0 ≦c ≦1, a+b+c=1. d, e, f, g, h and i are independently selected from 0, 1 and 2. The organic optoelectronic device of the present invention has adjustable energy gap, and can be a high-performance OPV or a high-detectivity OPD.

The invention relates to organic semiconducting compound and organic photoelectric components containing the organic semiconducting compound. The organic semiconducting compound is designed with a novel chemical structure, so that the compound demonstrates a good response value in the infrared light range, which is suitable for organic photoelectronic components, such as organic photodetector (OPD) or organic field-effect transistor (OFET), which come with a wavelength range of better absorbance and lower interference rate when in use.

The present invention is a structure of a photodiode, which comprises a substrate; a first electrode is arranged on the substrate; a first transport layer is arranged on the first electrode; a photoactive layer is arranged on the first transport layer, the photoactive layer includes a P-type semiconductor layer and an N-type semiconductor layer. The P-type semiconductor layer and the N-type semiconductor layer have a composition ratio between 1:0.5 and 1:1.5. The photoactive layer has a thickness ranging from 1 μm to 15 m, the photoactive layer has a first energy gap value, and a second electrode is disposed on the photoactive layer.

An organic semiconducting compound and an organic photoelectric component containing the same are provided. The organic semiconducting compound has a novel chemical structure to make the organic semiconducting compound have good response to the infrared light. The organic semiconducting compound can be applied to the organic photoelectric components such as organic photodetector (OPD), organic photovoltaic (OPV) cell, and organic field-effect transistor (OFET). Thus, the organic photoelectric components have better light absorption range and photoelectric response while in use.

An Anthradithiophene derivative having general formula (I): ##STR00001##
can be advantageously used in the synthesis of electron donor polymers These polymers can be advantageously used in the construction of photovoltaic devices (or solar devices) such as, for example, photovoltaic cells (or solar cells), photovoltaic modules (or solar modules), either on a rigid support or on a flexible support. Furthermore, these polymers can be advantageously used in the construction of Organic Thin Film Transistors (OTFTs), or Organic Field Effect Transistors (OFETs), or Organic Light-Emitting Diodes (OLEDs).

Ultra-narrow bandgap Non Fullerene Acceptors (NFAs) comprising an A-D-A′-D-A structure or an A-D-A′-D′-A′-D-A structure were designed, synthesized, and characterized (where A, A′ are organic acceptor moieties and D and D′ are organic donor moieties). Exemplary NFA materials have narrow bandgap (0.86 eV-0.99 eV). Photovoltaic devices and Near Infrared photodetector devices based on these compositions above were synthesized with controlled amounts of solvents and additives. A photodetector having a specific detectivity of 2.41×10.sup.12 Jones (D*) at a wavelength of 1040 nm was achieved.

A random copolymer comprising the monomer units A, B and C. In this random copolymer A comprises ##STR00001##
B comprises ##STR00002##
and C comprises an aryl group. Additionally, R1 R2, R3 and R4 are side chains independently selected from the group consisting of: H, Cl, F, CN, alkyl, alkoxy, alkylthio, ester, ketone and aryl groups. X1 and X2 are independently selected from the group consisting of: H, Cl, F, CN, alkyl, alkoxy, ester, ketone, amide and aryl groups.

The present invention discloses a ternary polymer solar cell. A photoactive layer of the ternary polymer solar cell includes two non-fullerene electron acceptors with large planarity. The weight percentage composition of the photoactive layer in the ternary polymer solar cell is: 41.6-50% of polymer electron donor, 0-50% of polymer electron acceptor, and 0-50% of non-fullerene perylene diimide (PDI) electron acceptor. The non-fullerene PDI electron acceptor is added into the photoactive layer to broaden the spectral absorption of the photoactive layer, improve the phase separation of the photoactive layer and inhibit the recombination of bimolecular charges, resulting in more efficient generation and transport of charges, thereby increasing a short-circuit current density of the ternary polymer solar cell device, and finally improving the power conversion efficiency of the ternary polymer solar cell device. Moreover, a new direction is provided for the selection of the all-polymer non-fullerene acceptor.

The invention relates to novel organic semiconducting compounds containing a polycyclic unit, to methods for their preparation and educts or intermediates used therein, to compositions, polymer blends and formulations containing them, to the use of the compounds, compositions and polymer blends as organic semiconductors in, or for the preparation of, organic electronic (OE) devices, especially organic photovoltaic (OPV) devices, perovskite-based solar cell (PSC) devices, organic photodetectors (OPD), organic field effect transistors (OFET) and organic light emitting diodes (OLED), and to OE, OPV, PSC, OPD, OFET and OLED devices comprising these compounds, compositions or polymer blends.