An organic light emitting display device includes a substrate which is divided into an active area and a non-active area. An adhesive film and an encapsulation substrate are disposed above the substrate, and a dam is disposed in the non-active area between the substrate and the encapsulation substrate. The dam includes a polymer light emitting material that is transparent when irradiated with visible light but emits light when irradiated with ultraviolet light. Therefore, external appearance of the dam can be inspected and performance of the dam can be evaluated using ultraviolet rays.

The present disclosure provides a quantum dot (QD) light emitting diode including: a first electrode; a second electrode facing the first electrode; a QD emitting material layer positioned between the first electrode and the second electrode and including a QD and an organic material; a hole auxiliary layer positioned between the first electrode and the QD emitting material layer; and an electron auxiliary layer positioned between the QD emitting material layer and the second electrode, wherein the organic material has a highest occupied molecular orbital (HOMO) level higher than a material of the hole auxiliary layer.

Disclosed are a quantum dot material, a quantum dot light emitting device, a display apparatus and a manufacturing method. The quantum dot material includes: a quantum dot, an anionic ligand, and a linking group linking the quantum dot and the anionic ligand, wherein the anionic ligand is configured to bind to a ring molecule by electrostatic force.

The present invention relates to a charge transporting semi-conducting material comprising: a) optionally at least one electrical dopant, and b) at least one cross-linked charge-transporting polymer comprising 1,2,3-triazole cross-linking units, a method for its preparation and a semiconducting device comprising the charge transporting semi-conducting material.

Devices, structures, materials and methods for vertical light emitting transistors (VLETs) and light emitting displays (LEDs) are provided. In particular, architectures for vertical polymer light emitting transistors (VPLETs) for active matrix organic light emitting displays (AMOLEDs) and AMOLEDs incorporating such VPLETs are described. Porous conductive transparent electrodes (such as from nanowires (NW)) alone or in combination with conjugated light emitting polymers (LEPs) and dielectric materials are utilized in forming organic light emitting transistors (OLETs). Combinations of thin films of ionic gels, LEDs, porous conductive electrodes and relevant substrates and gates are utilized to construct LETs, including singly and doubly gated VPLETs. In addition, printing processes are utilized to deposit layers of one or more of porous conductive electrodes, LEDs, and dielectric materials on various substrates to construct LETs, including singly and doubly gated VPLETs.

A photodetector includes a first electrode; an interlayer disposed on the first electrode; a photoabsorbing layer disposed on the interlayer, the photoabsorbing layer having one or more charge transport materials, and a plurality of two-dimensional quantum dots (2D QDs) dispersed in the one or more charge transport material; and a second electrode disposed on the photoabsorbing layer. A heterostructure photodetector includes a first electrode; a first photoabsorbing layer disposed on the first electrode, the first photoabsorbing layer having a first photoabsorbing material; a second photoabsorbing layer disposed on the first photoabsorbing layer, the second photoabsorbing layer having a second photoabsorbing material; and a second electrode disposed on the second photoabsorbing layer.

A monomolecular transistor including a first electrode including a first electrode layer and a first metal particle arranged at one end of the first electrode layer, a second electrode including a first electrode layer and a first metal particle arranged at one end of the first electrode layer, a third electrode insulated from the first electrode and the second electrode, a π-conjugated molecule having a π-conjugated skeleton. The first metal particle and the second metal particle face each other. The third electrode is arranged adjacent to the gap in which the first metal particle and the second metal particle face each other, and is spaced from the first metal particle and the second metal particle, the π-conjugated molecule is arranged in a gap between the first metal particle and the second metal particle.

The present disclosure provides a quantum dot (QD) light emitting diode including: a first electrode; a second electrode facing the first electrode; a QD emitting material layer positioned between the first electrode and the second electrode and including a QD and an organic material; a hole auxiliary layer positioned between the first electrode and the QD emitting material layer; and an electron auxiliary layer positioned between the QD emitting material layer and the second electrode, wherein the organic material has a highest occupied molecular orbital (HOMO) level higher than a material of the hole auxiliary layer.

A light emitting element includes a first electrode, a hole transport region on the first electrode, an emission layer on the hole transport region and containing a light emitting polymer compound derived from a mixture of a polyphenylene vinylene-based compound having a weight average molecular weight of about 1.3×10.sup.6 to about 1.6×10.sup.6 and an organic compound represented by Formula 1, and a second electrode on the emission layer, wherein, the mixture contains the polyphenylene vinylene-based compound and the organic compound in a molar ratio of about 9:1 to about 8:2, and the light emitting element may thus include an emission layer having improved flexibility and strength.

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A composition, an interlayer manufactured therefrom, and an apparatus including the interlayer are provided. The composition includes a polymer compound represented by Formula 1, a non-arylamine-based compound represented by Formula 2, and a solvent:

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The substituents in Formulae 1 and 2 may be understood as described in connection with the detailed description.