A photodetection element includes: a photoelectric conversion structure that contains a first material having an absorption coefficient higher than an absorption coefficient of monocrystalline silicon for light of a first wavelength, for which monocrystalline silicon exhibits absorption, and generates positive and negative charges by absorbing a photon; and an avalanche structure that includes a monocrystalline silicon layer, in which avalanche multiplication occurs as a result of injection of at least one selected from the group consisting of the positive and negative charges from the photoelectric conversion structure. The first material includes at least one selected from the group consisting of an organic semiconductor, a semiconductor-type carbon nanotube, and a semiconductor quantum dot.

A display apparatus includes laminated glass comprising an interlayer film laminated between a pair of glass plates; and an irradiation device irradiating the laminated glass with light rays, wherein the interlayer film comprises a thermoplastic resin and a luminescent material, wherein an output of the light rays radiated from the irradiation device is equal to or less than 1 mW, and wherein the laminated glass emits light at a luminance of equal to or greater than 1 cd/m.sup.2 when being irradiated with the light rays.

The present disclosure provides an organic light emitting diode (OLED) device and a method for manufacturing the same, an OLED display substrate and an OLED display device. The OLED device of the present disclosure comprises a substrate, and a first electrode, a light emitting layer and a second electrode arranged on the substrate, wherein the light emitting layer comprises fibers of p-phenylene based polymer as a host material, and the fibers of p-phenylene based polymer are arranged in a first orientation; and wherein the light emitted by the fibers of p-phenylene based polymer arranged in the first orientation is linearly polarized light in a first direction. The OLED device of the present disclosure can simultaneously ensure a good contrast, brightness and light transmittance.

A display apparatus includes laminated glass comprising an interlayer film laminated between a pair of glass plates; and an irradiation device irradiating the laminated glass with light rays, wherein the interlayer film comprises a thermoplastic resin and a luminescent material, wherein an output of the light rays radiated from the irradiation device is equal to or less than 1 mW, and wherein the laminated glass emits light at a luminance of equal to or greater than 1 cd/m.sup.2 when being irradiated with the light rays.

Devices, structures, materials and methods for vertical light emitting transistors (VLETs) and light emitting displays (LEDs) are provided. In particular, architectures for vertical polymer light emitting transistors (VPLETs) for active matrix organic light emitting displays (AMOLEDs) and AMOLEDs incorporating such VPLETs are described. Porous conductive transparent electrodes (such as from nanowires (NW)) alone or in combination with conjugated light emitting polymers (LEPs) and dielectric materials are utilized in forming organic light emitting transistors (OLETs). Combinations of thin films of ionic gels, LEDs, porous conductive electrodes and relevant substrates and gates are utilized to construct LETs, including singly and doubly gated VPLETs. In addition, printing processes are utilized to deposit layers of one or more of porous conductive electrodes, LEDs, and dielectric materials on various substrates to construct LETs, including singly and doubly gated VPLETs.

A photodetector includes a first electrode; an interlayer disposed on the first electrode; a photoabsorbing layer disposed on the interlayer, the photoabsorbing layer having one or more charge transport materials, and a plurality of two-dimensional quantum dots (2D QDs) dispersed in the one or more charge transport material; and a second electrode disposed on the photoabsorbing layer. A heterostructure photodetector includes a first electrode; a first photoabsorbing layer disposed on the first electrode, the first photoabsorbing layer having a first photoabsorbing material; a second photoabsorbing layer disposed on the first photoabsorbing layer, the second photoabsorbing layer having a second photoabsorbing material; and a second electrode disposed on the second photoabsorbing layer.

Polymeric charge transfer layer compositions suitable for organic layers of electronic devices that show reduced driving voltage and increased luminous efficiency.

A photoresistor comprises two electrodes connected by a photosensitive layer of the photoresistor, and at least one additional layer which is in contact with the photosensitive layer in order to influence the behavior of the photoresistor regarding carrier collection between the two electrodes, in order to improve the sensitivity of the photoresistor.

A light emitting device includes a substrate supporting a first light emitting element and a second light emitting element, the first light emitting element being configured to emit, in a first principal direction, light in a first wavelength band and the second light emitting element being configured to emit, in the first principal direction, light in a second wavelength band different from the first wavelength band, each light emitting element including: a light emitting diode layer, extending in a plane perpendicular to the first direction, having a thickness of 10 microns or less in the first direction and a maximum lateral dimension of 100 microns or less orthogonal to the first direction, the light emitting diode layer including a semiconductor material; and one or more layers configured to enhance an optical mode of the light emitted in the corresponding first or second wavelength band perpendicular to the plane and/or suppress an optical mode of the light emitted in the corresponding first or second wavelength band in the plane.

A photodetector includes a first electrode; an interlayer disposed on the first electrode; a photoabsorbing layer disposed on the interlayer, the photoabsorbing layer having one or more charge transport materials, and a plurality of two-dimensional quantum dots (2D QDs) dispersed in the one or more charge transport material; and a second electrode disposed on the photoabsorbing layer. A heterostructure photodetector includes a first electrode; a first photoabsorbing layer disposed on the first electrode, the first photoabsorbing layer having a first photoabsorbing material; a second photoabsorbing layer disposed on the first photoabsorbing layer, the second photoabsorbing layer having a second photoabsorbing material; and a second electrode disposed on the second photoabsorbing layer.