Patent classifications
H10K85/114
Complementary tunneling FET devices and method for forming the same
Described is an apparatus forming complementary tunneling field effect transistors (TFETs) using oxide and/or organic semiconductor material. One type of TFET comprises: a substrate; a doped first region, formed above the substrate, having p-type material selected from a group consisting of Group III-V, IV-IV, and IV of a periodic table; a doped second region, formed above the substrate, having transparent oxide n-type semiconductor material; and a gate stack coupled to the doped first and second regions. Another type of TFET comprises: a substrate; a doped first region, formed above the substrate, having p-type organic semiconductor material; a doped second region, formed above the substrate, having n-type oxide semiconductor material; and a gate stack coupled to the doped source and drain regions. In another example, TFET is made using organic only semiconductor materials for active regions.
Quantum dot optical devices with enhanced gain and sensitivity and methods of making same
Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.
SPINTRONIC DEVICES
A monolithic reusable microwire assembly can include a substrate and an electrically conductive thin-film wire formed on the substrate. The conductive thin-film wire can include a narrow segment forming an active area. A thermally and electrically insulating barrier can be formed on the electrically conductive thin-film wire. A roughness-reducing layer can be formed on the thermally and electrically insulating barrier and can have minimal surface roughness.
Quantum dot optical devices with enhanced gain and sensitivity and methods of making same
Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.
PHOTODETECTION ELEMENT INCLUDING PHOTOELECTRIC CONVERSION STRUCTURE AND AVALANCHE STRUCTURE
A photodetection element includes: a photoelectric conversion structure that contains a first material having an absorption coefficient higher than an absorption coefficient of monocrystalline silicon for light of a first wavelength, for which monocrystalline silicon exhibits absorption, and generates positive and negative charges by absorbing a photon; and an avalanche structure that includes a monocrystalline silicon layer, in which avalanche multiplication occurs as a result of injection of at least one selected from the group consisting of the positive and negative charges from the photoelectric conversion structure. The first material includes at least one selected from the group consisting of an organic semiconductor, a semiconductor-type carbon nanotube, and a semiconductor quantum dot.
ADDITIVE FOR LIGHT-EMITTING LAYER IN LIGHT-EMITTING ELECTROCHEMICAL CELL, COMPOSITION FOR FORMING LIGHT-EMITTING LAYER IN LIGHT-EMITTING ELECTROCHEMICAL CELL, AND LIGHT-EMITTING ELECTROCHEMICAL CELL
An additive for a light-emitting layer contains a compound represented by formula (1):
##STR00001##
where X is P, C, or S; A is a cyclic hydrocarbon group that may have H, a direct bond, a chain hydrocarbon group, or a heteroatom; R is H or an alkyl group, and a plurality of R may link together to form a ring, and if said ring is formed, at least one R is an alkyl group; m is 0 or 1; r is 1 when X is a phosphorous atom or a carbon atom and 2 when X is a sulfur atom; n is a number represented by 3-m when X is a phosphorous atom, and a number represented by 2-m if X is a carbon atom or a sulfur atom; and p is 1 when m is 0, at least 1 when m is 1, and is a substitutable number in A.
TERBENZOCYCLOPENTADIENE COMPOUND, HIGH POLYMER, MIXTURE, COMPOSITION AND ORGANIC ELECTRONIC DEVICE
Disclosed are a terbenzocyclopentadiene compound of better solubility and film-forming property, and a high polymer, mixture, composition and organic electronic device comprising same. This terbenzocyclopentadiene compound contains a benzocyclopentadiene structure. The matching of energy level and the symmetry of the structure provide a possibility for increasing the chemical/environmental stability of terbenzocyclopentadiene compounds and photoelectric devices. This terbenzocyclopentadiene compound has a better solubility in an organic solvent, and also facilitates forming a high-quality film by a printing method due to a high molecular weight. After this terbenzocyclopentadiene compound is used in OLED, particularly as a luminescent layer material, a higher quantum efficiency, luminescence stability and device life time can be provided.
COMPOSITION, LAMINATE, METHOD OF MANUFACTURING LAMINATE, TRANSISTOR, AND METHOD OF MANUFACTURING TRANSISTOR
Laminate, method of manufacturing laminate, transistor, and method of manufacturing transistor using a composition having the following (a) to (c): (a) a first organic compound represented by Formula (1) below (R represents a hydrogen atom or a glycidyl group. A plurality of Rs may be identical to or different from each other, but each of at least two Rs is a glycidyl group), (b) a second organic compound represented by Formula (2) below, and (c) a photocationic polymerization initiator
##STR00001##
Hydrophilic conjugated polymers, and methods of preparation and use thereof
The invention provides novel hydrophilic conjugated polymers, e.g., hydrophilic poly(arylene vinylenes) or PAVs, and preparation thereof, and methods and devices for their application in photovoltaics, and the resulting improved solar cells.
Polymeric light emitting substance and polymer light emitting device using the same
A polymeric light emitting substance having a polystyrene reduced number-average molecular weight of from 10.sup.3 to 10.sup.8 wherein this light emitting substance has in the main chain or side chain a metal complex structure showing light emission from the triplet excited state, and the substance can form a light emitting layer by industrially simple application methods such as a spin coat method, inkjet method, printing method and the like.