The invention provides nickel oxide films and preparation method thereof. The nickel oxide film includes: a nickel oxide film layer; organic molecules having electron withdrawing groups, the organic molecules being bonded to and disposed on the surface of the nickel oxide film layer.

The present invention generally relates to artificial photosystems and methods of their use, for example in artificial photosynthesis, wherein the artificial photosystems comprise one or more light-harvesting antenna (LHA) comprising a conjugated polyelectrolyte (CPE) complex (CPEC) comprising a donor CPE and an acceptor CPE, wherein the donor CPE and acceptor CPE are an electronic energy transfer (EET) donor/acceptor pair.

The present disclosure provides a composite electrode, an acoustic sensor using the composite electrode, and a manufacturing method of the composite electrode. The composite electrode includes a conductive layer, and a semiconductor high-molecular polymer layer formed on the conductive layer. The semiconductor high-molecular polymer layer has a three-dimensional mesh structure. The acoustic sensor includes a base; the above-mentioned composite electrode formed on the base; an organic layer formed on the composite electrode; and a top electrode formed on the organic layer.

The present specification relates to a fluorene-based compound of Formula 1, a coating composition comprising the fluorene-based compound of Formula 1, an organic light emitting device using the same, and a manufacturing method thereof.

The present specification relates to a fluorene-based compound of Formula 1, a coating composition comprising the fluorene-based compound of Formula 1, an organic light emitting device using the same, and a manufacturing method thereof.

A light emitting device, a method of manufacturing the same, and a display device including the same are disclosed. The light emitting device including a first electrode and a second electrode facing each other, an emission layer disposed between the first electrode and the second electrode, the emission layer including quantum dots, and a charge auxiliary layer disposed between the emission layer and the second electrode, wherein the emission layer includes a first surface facing the charge auxiliary layer and an opposite second surface, the quantum dots include a first organic ligand on a surface of the quantum dots, in the emission layer, an amount of the first organic ligand in a portion adjacent to the first surface is larger than an amount of the first organic ligand in a portion adjacent to the second surface.

It is an object of the present invention to provide a high molecular weight compound that has excellent hole injection and transport performance, is capable of blocking electrons, and is highly stable as a thin film. It is another object of the present invention to provide an organic EL element that includes an organic layer (thin film) made of the above-described high molecular weight compound, wherein the organic EL element has high light emission efficiency and a long lifespan. The high molecular weight compound according to the present invention includes a repeating unit represented by a general formula (3), that is constituted by a specific triarylamine structural unit and a specific bonding structural unit, and has a weight average molecular weight of 10,000 or more and less than 1,000,000 on a polystyrene basis.

A photoelectric conversion element capable of reducing a specific dark current. In a photoelectric conversion element (10) including an anode (12), a cathode (16), and an active layer (14) provided between the anode and the cathode, the active layer contains a p-type semiconductor material having a band gap of 0.5 eV to 1.58 eV, and an n-type semiconductor material, the n-type semiconductor material is a C.sub.60 fullerene derivative, and on an image obtained by binarizing an image of the active layer observed by a transmission electron microscope, the junction length between a phase of the n-type semiconductor material and a phase of the p-type semiconductor material is 120 μm to 170 μm per square micrometer of the area of the binarized image.

An electroluminescent device including a first electrode, a hole transport layer disposed on the first electrode, a first emission layer disposed on the hole transport layer, the first emission layer including a first light emitting particle on which a first ligand and a second ligand having a hole transporting property are attached, a second emission layer disposed on the first emission layer, the second emission layer including a second light emitting particle on which a first ligand and a third ligand having an electron transporting property are attached, an electron transport layer disposed on the second emission layer, and a second electrode disposed on the electron transport layer, wherein a solubility of the second ligand in a solvent is different than a solubility of the third ligand in the solvent and a display device including the same.

A non-blinking quantum dot (NBQD) is provided. In a light-emitting diode (LED) prepared with the NBQD, the maximum red brightness is greater than 180,000 cd/m.sup.2, the green brightness is greater than 200,000 cd/m.sup.2, and the blue brightness is greater than 100,000,000 cd/m.sup.2. The red current efficiency is 15-40 cd/A, the green current efficiency is 90-150 cd/A, and the blue current efficiency is 1-20 cd/A. The red external quantum efficiency is 18-30%, the green external quantum efficiency is 18-30%, and the blue external quantum efficiency is 6-22%. When the current efficiency or external quantum efficiency is the highest, the red, green and blue brightness of the LED is 70,000-100,000 cd/m.sup.2, 70,000-200,000 cd/m.sup.2 and 3,000-40,000 cd/m.sup.2, respectively.