A composition for use as an electronic material. The composition contains at least one organic semiconducting material, and at least one electrically insulating polymer forming a semiconducting blend wherein the insulating polymer acts as a matrix for the organic semiconducting material resulting in an interpenetrating morphology of the polymer and the semiconductor material. The variation of charge carrier mobility with temperature in the semiconducting blend is less than 20 percent in a temperature range. A method of making a film of an electronic material. The method includes dissolving at least one organic semiconducting material and at least one insulating polymer into an organic solvent in a pre-determined ratio resulting in a semiconducting blend, depositing the blend onto a substrate to form a film comprising an interpenetrating morphology of the at least one insulating polymer and the at least one organic semiconductor material.

A new type of charge transport layer based on organometal halide perovskite for highly efficient organic light emitting diodes (OLEDs) is demonstrated. By solution processing of halide perovskite precursors, smooth essentially pure perovskite thin films may be prepared with high transparency and conductivity. Solution processed multilayer OLED with this perovskite-based hole transport layer outperforms a device with a PEDOT:PSS layer.

Various light emitting diode device embodiments that include emissive material elements, e.g., core-shell quantum dots, that are either (i) provided in nanoscale holes provided in an insulating layer positioned between an electron supply/transport layer and a hole supply/transport layer, or (ii) provided on a suspension layer positioned above and covering a nanoscale hole in such an insulating layer. Also, various methods of making such light emitting diode devices, including lithographic and non-lithographic methods.

A hybrid fiber for detection of UV light is described. The hybrid fiber includes a conductor, a first layer, a photoactive layer, a second layer, and a transparent electrode. The conductor includes a conductive material. The first layer includes a first material deposited onto the conductor. The first material is configured to transport holes and block electrons. The photoactive layer includes a photoactive material coating the first layer. The photoactive material includes a first submaterial and a second submaterial. The second layer includes a second material deposited onto the photoactive layer. The second material is configured to block holes and transport electrons. The transparent electrode includes a transparent electrode material deposited onto the second layer.

The present disclosure provides a compound having property of thermally activated delayed fluorescence (TADF) and a display device. The compound has a structure represented by Formula (I), in which X is S, O, Se, or C; D is an electron donor, A is an electron acceptor; m is a number of the electron donor D, and the m electron donors D are the same or different; n is a number of the electron acceptor, and the n electron acceptors are the same or different, m and n are integers each independently selected from 1, 2, 3, 4 or 5, and m+n≤6. The above compound provides a high luminescence efficiency. The organic light-emitting display device has advantages of improved luminescence efficiency, lower cost and long service life by using the above compound as a light-emitting material, a host material, or a guest material. ##STR00001##

The present disclosure provides II-VI based non-Cd visible light emitting quantum dots (QDs) and a manufacturing method thereof to solve the problems with broad full width at half maximum (FWHM) and low quantum efficiency. The present disclosure further provides a QD light emitting diode (QLED) using the II-VI based non-Cd visible light emitting QDs. The QDs according to the present disclosure include a II-VI based ternary ZnSeTe core, wherein a Se:Te ratio in the ZnSeTe core is 1:10 to 100:1. According to the present disclosure, it is possible to provide QDs that emit visible light ranging from red to blue by adjusting the Se:Te ratio in the II-VI based ternary ZnSeTe core.

A composition for use as an electronic material. The composition contains at least one organic semiconducting material, and at least one electrically insulating polymer forming a semiconducting blend wherein the insulating polymer acts as a matrix for the organic semiconducting material resulting in an interpenetrating morphology of the polymer and the semiconductor material. The variation of charge carrier mobility with temperature in the semiconducting blend is less than 20 percent in a temperature range. A method of making a film of an electronic material. The method includes dissolving at least one organic semiconducting material and at least one insulating polymer into an organic solvent in a pre-determined ratio resulting in a semiconducting blend, depositing the blend onto a substrate to form a film comprising an interpenetrating morphology of the at least one insulating polymer and the at least one organic semiconductor material.

The present invention provides a QD material, a preparation method, and a semiconductor device. The QD material includes a number of N QD structural units arranged sequentially along a radial direction of the QD material, where N≥1. Each QD structural unit has a gradient alloy composition structure with an energy level width increasing along the radial direction from the center to the surface of the QD material. Moreover, the energy level widths of adjacent QD structural units are continuous. The present invention provides a QD material having a gradient alloy composition along the radial direction from the center to the surface. The disclosed QD material not only achieves higher QD light-emitting efficiency, but also meets the comprehensive requirements of semiconductor devices and corresponding display technologies on QD materials. Therefore, the disclosed QD material is a desired QD light-emitting material suitable for semiconductor devices and display technologies.

A quantum dot (QD) composite material includes at least two structural units arranged sequentially along a radial direction. The QD composite material includes a type A3 QD structural unit and a type A4 QD structural unit. The type A3 QD structural units has a gradient alloy composition structure with an energy level width increasing along the radial direction toward a surface, and the type A4 QD structural unit has a homogeneous alloy composition structure. An inner part of the QD composite material includes one or more QD structural units having a gradient alloy composition structure, and energy levels in adjacent QD structural units having gradient alloy composition structures are continuous. The QD composite material includes one or more QD structural units having a homogeneous alloy composition structure in a region close to the surface.

A quantum dot (QD) composite material includes at least two structural units arranged sequentially along a radial direction. The at least two structural units include a type A1 structural unit and a type A2 structural unit. The type A1 QD structural unit has a gradient alloy composition structure with an energy level width increasing along the radial direction toward a surface, and the type A2 QD structural unit has a gradient alloy composition structure with the energy level width decreasing along the radial direction toward the surface. The two types of QD structural units are arranged alternately along the radial direction, and the energy levels in adjacent QD structural units having gradient alloy composition structures are continuous.