A quantum dot (QD) composite material includes at least two structural units arranged sequentially along a radial direction. The at least two structural units include a type A1 structural unit and a type A2 structural unit. The type A1 QD structural unit has a gradient alloy composition structure with an energy level width increasing along the radial direction toward a surface, and the type A2 QD structural unit has a gradient alloy composition structure with the energy level width decreasing along the radial direction toward the surface. The two types of QD structural units are arranged alternately along the radial direction, and the energy levels in adjacent QD structural units having gradient alloy composition structures are continuous.

A quantum dot (QD) composite material includes at least two structural units arranged sequentially along a radial direction. The QD composite material includes a type A3 QD structural unit and a type A4 QD structural unit. The type A3 QD structural units has a gradient alloy composition structure with an energy level width increasing along the radial direction toward a surface, and the type A4 QD structural unit has a homogeneous alloy composition structure. An inner part of the QD composite material includes one or more QD structural units having a gradient alloy composition structure, and energy levels in adjacent QD structural units having gradient alloy composition structures are continuous. The QD composite material includes one or more QD structural units having a homogeneous alloy composition structure in a region close to the surface.

A manufacturing method of a tandem OLED device is provided, including the following steps: providing an anode; using an ink printing technology to form an organic electroluminescence component on the anode; furthermore, the organic electroluminescence component includes a plurality of organic electroluminescence units disposed in stacks, and each of the organic electroluminescence units includes a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer which are disposed sequentially; and forming the cathode on a side of the organic electroluminescence component away from the anode.

A manufacturing method of a tandem OLED device is provided, including the following steps: providing an anode; using an ink printing technology to form an organic electroluminescence component on the anode; furthermore, the organic electroluminescence component includes a plurality of organic electroluminescence units disposed in stacks, and each of the organic electroluminescence units includes a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer which are disposed sequentially; and forming the cathode on a side of the organic electroluminescence component away from the anode.

The present invention provides a QD material, a preparation method, and a semiconductor device. The QD material includes at least one QD structural unit arranged sequentially along a radial direction of the QD material. Each QD structural unit has a gradient alloy composition structure with a changing energy level width along the radial direction or a homogeneous alloy composition structure with a constant energy level width along the radial direction. The disclosed QD material not only achieves higher light-emission efficiency of QD material, but also meets the comprehensive requirements of semiconductor devices and the corresponding display technologies on QD materials. Therefore, the disclosed QD material is a desired QD light-emitting material suitable for semiconductor devices and display technologies.

Although an ink jet method known as a method of selectively forming a film of a high molecular species organic compound, can coat to divide an organic compound for emitting three kinds (R, G, B) of light in one step, film forming accuracy is poor, it is difficult to control the method and therefore, uniformity is not achieved and the constitution is liable to disperse. In contrast thereto, according to the invention, a film comprising a high molecular species material is formed over an entire face of a lower electrode connected to a thin film transistor by a coating method and thereafter, the film comprising the high molecular species material is etched by etching by plasma to thereby enable to selectively form a high molecular species material layer. Further, the organic compound layer is constituted by a material for carrying out luminescence of white color or luminescence of single color and combined with a color changing layer or a coloring layer to thereby realize full color formation.

Various light emitting diode device embodiments that include emissive material elements, e.g., core-shell quantum dots, that are either (i) provided in nanoscale holes provided in an insulating layer positioned between an electron supply/transport layer and a hole supply/transport layer, or (ii) provided on a suspension layer positioned above and covering a nanoscale hole in such an insulating layer. Also, various methods of making such light emitting diode devices, including lithographic and non-lithographic methods.

A quantum-dot light emitting diode includes a first electrode; a second electrode facing the first electrode; a QD emitting material layer between the first and second electrodes and including a QD; a hole transporting layer between the first electrode and the QD emitting material layer and including a first hole transporting material; a first electron transporting layer between the QD emitting material layer and the second electrode; and a first electron control layer between the QD emitting material layer and the first electron transporting layer and including a second hole transporting material.

Although an ink jet method known as a method of selectively forming a film of a high molecular species organic compound, can coat to divide an organic compound for emitting three kinds (R, G, B) of light in one step, film forming accuracy is poor, it is difficult to control the method and therefore, uniformity is not achieved and the constitution is liable to disperse. In contrast thereto, according to the invention, a film comprising a high molecular species material is formed over an entire face of a lower electrode connected to a thin film transistor by a coating method and thereafter, the film comprising the high molecular species material is etched by etching by plasma to thereby enable to selectively form a high molecular species material layer. Further, the organic compound layer is constituted by a material for carrying out luminescence of white color or luminescence of single color and combined with a color changing layer or a coloring layer to thereby realize full color formation.

The present disclosure provides a light-emitting layer, an organic light emitting diode (OLED) device, and a display apparatus. The light-emitting layer has a host material containing a first photocrosslinker group. A guest material containing a second photocrosslinker group is prepared. The host material and the guest material are mixed in a solvent to form a mixture. The mixture is coated, annealed, and LV-irradiated on a substrate to form the light-emitting layer. As such, the disclosed light-emitting layer is prepared by the polymerization after being on the substrate. The light-emitting layer has a mesh structure. The mesh structure improves energy transfer between the host material and guest material and increases the lifespan of the resultant OLED device and OLED display apparatus.