H10K85/225

Single-walled carbon nanotubes/quantum dot hybrid structures and methods of making and use of the hybrid structures

Briefly described, embodiments of the present disclosure relate to structures including single-walled carbon nanotube/quantum dot networks, devices including the structures, and methods of making devices including the single-walled carbon nanotube/quantum dot networks.

CARBON NANOTUBE INTERLAYER, MANUFACTURING METHOD THEREOF, AND THIN FILM TRANSISTOR USING THE SAME

The present invention relates to a carbon nanotube interlayer, a manufacturing method thereof, and a thin film transistor using the same. More specifically, the present invention provides a carbon nanotube interlayer, a manufacturing method thereof, and a thin film transistor using the same, where the carbon nanotube interlayer is a layer constituting an organic thin film transistor and comprising a conjugated polymer and a single-walled carbon nanotube between an organic semiconductor layer and a source/drain electrode. The conjugated polymer selectively wraps the single-walled carbon nanotube having semiconducting properties.

Selective placement of carbon nanotubes via coulombic attraction of oppositely charged carbon nanotubes and self-assembled monolayers

A method of forming a structure having selectively placed carbon nanotubes, a method of making charged carbon nanotubes, a bi-functional precursor, and a structure having a high density carbon nanotube layer with minimal bundling. Carbon nanotubes are selectively placed on a substrate having two regions. The first region has an isoelectric point exceeding the second region's isoelectric point. The substrate is immersed in a solution of a bi-functional precursor having anchoring and charged ends. The anchoring end bonds to the first region to form a self-assembled monolayer having a charged end. The substrate with charged monolayer is immersed in a solution of carbon nanotubes having an opposite charge to form a carbon nanotube layer on the self-assembled monolayer. The charged carbon nanotubes are made by functionalization or coating with an ionic surfactant.

SINGLE-WALLED CARBON NANOTUBES/QUANTUM DOT HYBRID STRUCTURES AND METHODS OF MAKING AND USE OF THE HYBRID STRUCTURES
20170117494 · 2017-04-27 ·

Briefly described, embodiments of the present disclosure relate to structures including single-walled carbon nanotube/quantum dot networks, devices including the structures, and methods of making devices including the single-walled carbon nanotube/quantum dot networks.

Nanoelectronic electrochemical test device

Nanoelectronic devices for the detection and quantification of biomolecules are provided. In certain embodiments, the devices are configured to detect and measure blood glucose levels. Also provided are methods of fabricating nanoelectronic devices for the detection of biomolecules.

FUNCTIONAL INTERLAYERS OF FULLERENE DERIVATIVES AND APPLICATIONS IN ORGANIC SOLAR CELLS

The invention provides novel materials, methods and designs to enable improved power conversion efficiencies of organic photovoltaics (OPVs). In particular, the invention provides novel materials and interlayers for polymer-based solar cells. Novel functional fullerene-based interlayers are disclosed that enable high efficiency devices in conjunction with numerous active layer and electrode materials.

FLOATING EVAPORATIVE ASSEMBLY OF ALIGNED CARBON NANOTUBES

High density films of semiconducting single-walled carbon nanotubes having a high degree of nanotube alignment are provided. Also provided are methods of making the films and field effect transistors (FETs) that incorporate the films as conducting channel materials. The single-walled carbon nanotubes are deposited from a thin layer of organic solvent containing solubilized single-walled carbon nanotubes that is spread over the surface of an aqueous medium, inducing evaporative self-assembly upon contacting a solid substrate.

NANOVESICLE COMPRISING HETERODIMERIC G-PROTEIN COUPLED RECEPTOR, METHOD FOR PREPARING NANOVESICLE, FIELD EFFECT TRANSISTOR-BASED TASTE SENSOR COMPRISING NANOVESICLE, AND METHOD FOR MANUFACTURING TASTE SENSOR

The present invention relates to a nanovesicle comprising a heterodimeric G-protein coupled receptor, a method for preparing the nanovesicle, a field effect transistor-based taste sensor comprising the nanovesicle, and a method for manufacturing the taste sensor. The field effect transistor based taste sensor functionalized by the nanovesicle comprising the heterodimer G-protein coupled receptor according to the present invention has excellent sensitivity and selectivity and may highly specifically detect a sweet taste substance in real time, by using the heterodimeric G-protein coupled receptor and the nanovesicle comprising the same.