An organic semiconductor laser device containing a compound represented by the following formula has a low threshold value for laser emission and has excellent laser characteristics. The ring A, the ring B and the ring C each are a aryl ring or a heteroaryl ring; Y.sup.1 is B, P, PO, PS, Al, Ga, As, SiR or GeR; R is an aryl group or an alkyl group; X.sup.1 and X.sup.2 each are O, NR, S or Se; R is an aryl group, a heteroaryl group or an alky group.

An organic light-emitting diode and a preparation method thereof, a display substrate, and a display device. The organic light-emitting diode includes a double-layer fold structure, the double-layer fold structure includes a first layer and a second layer adjacent to each other, an interface between the first layer and the second layer and a surface of the second layer farther away from the first layer have a fold morphology, a virtrification transition temperature of the first layer is less than a virtrification transition temperature of the second layer, and a thermal expansion coefficient of the first layer is greater than a thermal expansion coefficient of the second layer. In the organic light-emitting diode, a natural and self-assembled fold morphology can be obtained with a double-layer thin film, to replace an external fold structure, and the resulted device has a higher efficiency and a reduced operating voltage.

Provided is an organic light-emitting diode comprising a substrate, an anode layer, optionally one or more hole injection layers, one or more hole transport layers, optionally one or more electron blocking layers, an emitting layer, optionally one or more hole blocking layers, optionally one or more electron transport layers, an electron injection layer, and a cathode, wherein either the hole injection layer, or the hole transport layer, or both of the hole injection layer and the hole transport layer, or layer that functions as both a hole injection layer and a hole transport layer, comprises a polymer that comprises one or more triaryl aminium radical cations having the structure (S1) wherein each of R.sup.11, R.sup.12, R.sup.13, R.sup.14, R.sup.15, R.sup.21, R.sup.22, R.sup.23, R.sup.24, R.sup.25, R.sup.31, R.sup.32, R.sup.33, R.sup.34, and R.sup.35 is independently selected from the group consisting of hydrogen, deuterium halogens, amine groups, hydroxyl groups, sulfonate groups, nitro groups, and organic groups, wherein two or more of R.sup.11, R.sup.12, R.sup.13, R.sup.14, R.sup.15, R.sup.21, R.sup.22, R.sup.23, R.sup.24, R.sup.25, R.sup.31, R.sup.32, R.sup.33, R.sup.34, and R.sup.35 are optionally connected to each other to form a ring structure; wherein one or more of R.sup.11, R.sup.12, R.sup.13, R.sup.14, R.sup.15, R.sup.21, R.sup.22, R.sup.23, R.sup.24, R.sup.25, R.sup.31, R.sup.32, R.sup.33, R.sup.34, and R.sup.35 is covalently bound to the polymer, and wherein A is an anion.

##STR00001##

A semiconductor light-emitting element including a first semiconductor layer of a first conductivity type; a first light-emitting layer; a second light-emitting layer; and a second semiconductor layer of a conductivity type opposite to the conductivity type of the first semiconductor layer. The first light-emitting layer has a base layer with composition subject to stress strain from the first semiconductor layer and has a plurality of base segments partitioned into a random net shape; and a first quantum well structure layer composed of at least one quantum well layer and at least one barrier layer. The second light-emitting layer has a second quantum well structure layer composed of a plurality of barrier layers that have different compositions from that of the at least one barrier layer of the first quantum well structure layer, and at least one quantum well layer.

Disclosed are an organic electroluminescent device and a preparation method thereof. The organic electroluminescent device comprises an anode, a hole transport layer, an organic light-emitting layer, an electron transport layer and a cathode. An organic metal complex and an active metal compound are doped in the electron transport layer, wherein the active metal compound is an alkali metal complex, an alkali earth metal complex or a lanthanide metal compound. The preparation method thereof includes the following steps: etching an anode pattern, and evaporating a hole transport layer and an organic light-emitting layer on an ITO glass substrate in order; and co-evaporate an electron transport material, an organic metal complex and an active metal compound to form an electron transport layer; and evaporating a cathode on the electron transport layer.

An LED device capable of emitting electromagnetic radiation ranging from about 200 nm to 365 nm, the device. The device includes a substrate member, the substrate member being selected from sapphire, silicon, quartz, gallium nitride, gallium aluminum nitride, or others. The device has an active region overlying the substrate region, the active region comprising a light emitting spatial region comprising a p-n junction and characterized by a current crowding feature of electrical current provided in the active region. The light emitting spatial region is characterized by about 1 to 10 microns. The device includes an optical structure spatially disposed separate and apart the light emitting spatial region and is configured to facilitate light extraction from the active region.

A semiconductor light-emitting element including a first semiconductor layer of a first conductivity type; a light-emitting functional layer that includes first and second light-emitting layers; and a second semiconductor layer of a conductivity type opposite to the conductivity type of the first semiconductor layer. The first light-emitting layer has a first base layer with a composition subject to stress strain from the first semiconductor layer; a first quantum well layer that retains a segment shape of the first base segment; and a first barrier layer that has a flat surface flattened by embedding the first base layer and the first quantum well layer. The second light-emitting layer has a second base layer that has a composition subject to stress strain from the first barrier layer; a second quantum well layer that retains a segment shape of the second base segment; and a second barrier layer.

A light emitting element includes: a first semiconductor layer of a first type; a first auxiliary layer on the first semiconductor layer and having a first indium composition ratio; a second auxiliary layer on the first auxiliary layer and having a second indium composition ratio; an active layer including barrier layers and well layers that are alternately arranged on the second auxiliary layer and having a third indium composition ratio; and a second semiconductor layer on the active layer and of a second type different from the first type. The second indium composition ratio is greater than the first indium composition ratio and is less than the third indium composition ratio.

Disclosed are a method for preparing a series of carbazole derivatives and use thereof in organic light-emitting diodes. The structure of the material is as shown in Formula I. An organic electroluminescent device prepared by the material can have a significantly improved power efficiency and an external quantum efficiency for the device and an extended life for an orange light or red light device; moreover, the material has characteristics, for example, methods for the synthesis and purification of the material are simple and suitable for large-scale production, and is an ideal choice as a luminescent material for organic electroluminescent devices. The use of the organic electroluminescent diode material as a carrier transport material or as a luminescent material alone or as a host material in a light-emitting layer also falls within the scope of protection.

##STR00001##

Metal complexes containing heteroaryl and its analogues as ligands are disclosed in this application. These compounds may be useful as charge transport materials in OLEDs.