A semiconducting composition comprising a semiconducting polymer and a semiconducting non-polymeric polycyclic compound, wherein the semiconducting polymer comprises units of A and/or B: ##STR00001##
wherein R.sub.1, R.sub.2, R.sub.5, R.sub.6, R.sub.7, R.sub.8, x, y, p, q, r, R.sub.3, R.sub.4, R.sub.9, R.sub.10 and R.sub.11 have any of the meanings defined in the description.

The present invention relates to organic light emitting devices with a multi-emissive material layer (EML), where a multi-EML generally refers to an emissive layer having at least two layers of emissive material, each layer having a different emitter concentration (e.g. a first EML in direct contact with a second EML, and the emitter concentration of the first EML (hole favorable) exceeds that of the second EML (electron favorable)).

A condensed cyclic compound is represented by Formula 1: ##STR00001##
where X.sub.1-X.sub.4, L.sub.1-L.sub.4 R.sub.1-R.sub.6 and Ar.sub.1-Ar.sub.8 are as defined in the specification. An organic light-emitting device includes the condensed cyclic compound.

A layered structure for an organic light-emitting diode (OLED) device, the layered structure including a light-transmissive substrate and an internal extraction layer formed on one side of the light-transmissive substrate, in which the internal extraction layer includes (1) a scattering area containing scattering elements composed of solid particles and pores, the solid particles having a density that decreases as it goes away from the interface with the light-transmissive substrate, and the pores having a density that increases as it goes away from the interface with the light-transmissive substrate, and (2) a free area where no scattering elements are present, formed from the surface of the internal extraction layer, which is opposite to the interface, to a predetermined depth.

A light-emitting device includes a plurality of organic EL elements. Each of the organic EL elements includes a reflection electrode, a hole transport region, an electron-trapping luminescent layer, and a light extraction electrode in this order. The hole transport region has a sheet resistance of 4.0×10.sup.7 Ω/sq.⋅ or more at a current of 0.1 nA/pixel, and the total thickness of the hole transport region and the electron-trapping luminescent layer is equivalent to an optical path length enabling emission from the electron-trapping luminescent layer to be enhanced.

The present invention relates to organic electroluminescent devices comprising a sterically hindered fluorescent perylene emitter compound and a sensitizer compound and to sterically hindered fluorescent perylene emitter compounds.

A composition for forming an organic semiconductor film includes an organic semiconductor represented by Formula A-1, a polymer, a solvent having a boiling point of 150° C. or higher and an SP value of 18 to 23, and a silicone compound having a structure represented by Formula D-1.

##STR00001##

The present disclosure relates to an organic electroluminescent compound, a plurality of host materials, and an organic electroluminescent device comprising the same. By comprising the organic electroluminescent compound according to the present disclosure as a single host material, or a specific combination of compounds according to the present disclosure as a plurality of host materials, it is possible to produce an organic electroluminescent device having an improved luminous efficiency.

An organic field effect transistor includes a channel structure defining an active area located between a source and a drain. The channel structure includes a photoalignment layer and an organic semiconductor layer disposed directly over the photoalignment layer. The photoalignment layer is configured to influence an orientation of molecules within the organic semiconductor layer and hence impact the mobility of charge carriers both within the active area and adjacent to the active area.

A material for organic electroluminescent display device includes a luminescent dopant part and an assist dopant part. The luminescent dopant part may have an energy of 2.6 eV or higher to 3.0 eV or lower in an excited singlet state S.sub.1 level. The assist dopant part may have an energy of 2.4 eV or higher to 3.0 eV or lower in the excited singlet state S.sub.1 level. An energy gap ΔE.sub.ST between the excited singlet state S.sub.1 and an excited triplet state T.sub.1 may be 0 eV or larger to 2.0 eV or smaller.