Ultra-narrow bandgap Non Fullerene Acceptors (NFAs) comprising an A-D-A′-D-A structure or an A-D-A′-D′-A′-D-A structure were designed, synthesized, and characterized (where A, A′ are organic acceptor moieties and D and D′ are organic donor moieties). Exemplary NFA materials have narrow bandgap (0.86 eV-0.99 eV). Photovoltaic devices and Near Infrared photodetector devices based on these compositions above were synthesized with controlled amounts of solvents and additives. A photodetector having a specific detectivity of 2.41×10.sup.12 Jones (D*) at a wavelength of 1040 nm was achieved.

An metal organic complex has the following general formula (I): ##STR00001##
Ar.sup.1, selected from at least one of aromatic hydrocarbyl, R.sup.1-substituted aromatic hydrocarbyl, heterocyclic aromatic hydrocarbyl and R.sup.1-substituted heterocyclic aromatic hydrocarbyl; and Ar.sup.2, selected from one of heterocyclic aromatic hydrocarbyl containing N atoms and R.sup.1-substituted heterocyclic aromatic hydrocarbyl containing N atoms; M being a transitional group metal element; L being selected from one of a monodentate neutral ligand, a monodentate anionic ligand, a bidentate neutral ligand and a bidentate anionic ligand; m being any integer ranging from 1 to 3; and n being any integer ranging from 1 to 2.

A compound of formula (I):
EAG-EDG-EAG   (I)
wherein each EAG is an electron accepting group; and EDG is an electron-donating group of formula (IIa): ##STR00001##
The compound of formula (I) may be used in a photosensitive layer of an organic photodetector wherein the photosensitive layer comprises the compound of formula (I) and an electron donor. A photosensor may comprise the organic photodetector and a light source, e.g. a near infra-red light source.

Chromophores with large hyperpolarizabilities, films with electro-optic activity comprising the chromophores, and electro-optic devices comprising the chromophores are disclosed.

The present invention is to provide a photoelectric conversion element with an excellent sensitivity, an imaging element, an optical sensor, and a compound. The photoelectric conversion element according to the embodiment of the present invention includes, in the following order, a conductive film, a photoelectric conversion film, and a transparent conductive film, in which the photoelectric conversion film contains a compound represented by Formula (1) and a coloring agent.

A-D-A  (1)

The present invention relates to an Organic Semiconducting Compound and organic photoelectric components using the same. The innovative chemical structure of the Organic Semiconducting Compound allows improved infrared light range response values and renders it suitable for uses in the organic photoelectric components, such as OPD, OFET, or OPV due to its broadened absorbance wavelength range and improved external quantum efficiency.

An organic EL device includes: an anode; a cathode; an anode side emitting unit; a cathode side emitting unit; a charge generating unit; a first organic layer having a thickness of 40 nm or less; and a second organic layer, in which the anode side emitting unit includes a first emitting layer which is provided close to the anode, a difference between an ionization potential Ip(H1) of a first host material in the first emitting layer and an ionization potential Ip(EBL) of a first organic material in the first organic layer satisfies a relationship of a numerical formula (Numerical Formula A1) below,

Ip(H1)−Ip(EBL)≤0.4 eV  (Numerical Formula A1).

Provided are compounds comprising a structure of the following Formula I:

##STR00001##

where the structure of Formula I can be coordinated to a metal M.

Also provided are formulations comprising these compounds. Further provided are OLEDs and related consumer products that utilize these compounds.

The present invention relates to compounds suitable for use in electronic devices, and to electronic devices, especially organic electroluminescent devices, comprising these compounds.

An organic optoelectronic device comprises a first electrode, a first carrier transport layer, an active layer, a second carrier transport layer and a second electrode. The first electrode is a transparent electrode. The active layer includes a low band gap small molecule material which includes a structure of Formula I:

##STR00001##

Wherein, o, m, n, p, x and y are independently selected from any integer from 0 to 2. Ar.sup.0, Ar.sup.1 and A.sup.2 are electron-donating groups. A.sup.0 is a heteroatom-containg tricyclic structure with or without substituents, and. the heteroatom comprises at least one of S, N, Si, and Se. A.sup.1 is an electron withdrawing group with or without substituents, and the structure of the electron-withdrawing group comprises at least one of S, N, Si, Se, C═O, —CN, SO.sub.2. The organic optoelectronic device of the present invention has good external quantum efficiency and dark current performance.